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Improved AlGaN/GaN Metal-Oxide- Semiconductor High-Electron Mobility Transistors With TiO2 Gate Dielectric Annealed in Nitrogen

IEEE transactions on electron devices, 2018-02, Vol.65 (2), p.783-787

2018

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AlGaN/GaN Metal Oxide Semiconductor High-Electron Mobility Transistors with Annealed TiO2 as Passivation and Dielectric Layers

Micromachines (Basel), 2023-05, Vol.14 (6), p.1183

2023

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Linearity enhancement and noise reduction in a passivated AlGaAs/InGaAs/GaAs high-electron mobility transistor

Journal of the Korean Physical Society, 2021, 79(9), , pp.828-831

2021

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Large-Signal Linearity and High-Frequency Noise of Passivated AlGaN/GaN High-Electron Mobility Transistors

Micromachines (Basel), 2020-12, Vol.12 (1), p.7

2020

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Temperature Dependence of Current Gain, Ideality Factor, and Offset Voltage of AlGaAs/GaAs and InGaP/GaAs HBTs

IEEE transactions on electron devices, 2009-12, Vol.56 (12), p.2945-2951

2009

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Effects of postdeposition annealing on TiO2/GaN/AlGaN/GaN/Si metal-oxide-semiconductor high-electron mobility transistors

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2017-01, Vol.35 (1)

2017

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Comprehensive characterization of AlGaN/GaN metal‐oxide‐semiconductor high‐electron mobility transistors with TiO2 gate dielectric

Physica status solidi. C, 2017-01, Vol.14 (1-2), p.n/a

2017

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Current Gain and Offset Voltage in an InGaP/GaAsSb/GaAs Double Heterojunction Bipolar Transistor

IEEE transactions on electron devices, 2012-12, Vol.59 (12), p.3339-3343

2012

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InAlAs/InGaAs/GaAs metamorphic high-electron mobility transistors with selective and nonselective recess gate processes

Microelectronic engineering, 2019-09, Vol.217, p.111107, Article 111107

2019

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Effects of surface passivation and temperature on AlGaAs/InGaAs high-electron mobility transistor

Microelectronic engineering, 2019-06, Vol.214, p.100-103

2019

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Reduction of Turn-on, Knee, and Offset Voltages of InAlGaP/GaAs HBTs Using \delta-Doping in the InAlGaP Emitter

IEEE transactions on electron devices, 2010-11, Vol.57 (11), p.2970-2977

2010

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Stability study and effect of passivation on InP/InGaAs double heterojunction bipolar transistors

Applied physics letters, 2009-02, Vol.94 (6), p.063506-063506-3

2009

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Novel Delta-Doped InAlGaP/GaAs Heterojunction Bipolar Transistor

IEEE electron device letters, 2008-07, Vol.29 (7), p.671-673

2008

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Characterization of Interfaces Between Contacts and Active Layer in Organic Photovoltaics Using Impedance Spectroscopy and Equivalent Circuit Model

IEEE journal of photovoltaics, 2015-05, Vol.5 (3), p.903-911

2015

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Microwave and power characteristics of AlGaN GaN Si high-electron mobility transistors with HfO2 and TiO2 passivation

Semiconductor science and technology, 2015-01, Vol.30 (1)

2015

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High-temperature stability of improved AlGaN/AlN/GaN HEMT with pre-gate metal treatment

IEICE Electronics Express, 2019, Vol.16 (5), p.20181046-20181046

2019

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Effects of Selective and Nonselective Wet Gate Recess on InAlAs∕InGaAs Metamorphic Field-Effect Transistors with Double Delta Doping in InGaAs Channels

Journal of the Electrochemical Society, 2011, Vol.158 (3), p.H305

2011

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Performance improvement in tensile-strained In0.5Al0.5As/InxGa1-xAs/In0.5Al0.5As metamorphic HEMT

IEEE transactions on electron devices, 2006-03, Vol.53 (3), p.406-412

2006

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Performance of Surface and Gate-Engineered AlGaAs∕InGaAs Pseudomorphic High-Electron Mobility Transistors

Journal of the Electrochemical Society, 2009, Vol.156 (6), p.H401

2009

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Optical characterization of InAlAs/InGaAs metamorphic high-electron mobility transistor structures with tensile and compressive strain

Thin solid films, 2013-02, Vol.529, p.217-221

2013

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High breakdown characteristic δ-doped InGaP/InGaAs/AlGaAs tunneling real-space transfer HEMT

IEEE transactions on electron devices, 2002-02, Vol.49 (2), p.221-225

2002

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Characteristics of In0.425Al0.575As-InxGa1-xAs metamorphic HEMTs with pseudomorphic and symmetrically graded channels

IEEE transactions on electron devices, 2005-06, Vol.52 (6), p.1079-1086

2005

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Thermal-Stable Characteristics of Metamorphic Double δ-Doped Heterostructure Field-Effect Transistor

Japanese Journal of Applied Physics, 2007-10, Vol.46 (10R), p.6595

2007

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Effect of Temperature on Novel InAlGaP∕GaAs∕InGaAs Camel-Gate Pseudomorphic High-Electron-Mobility Transistors

Journal of the Electrochemical Society, 2006, Vol.153 (5), p.G498

2006

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Temperature-dependent photoreflectance and photoluminescence characterization of the subband structure and built-in electric field of GaAs/GaInAs graded-channel high electron mobility transistor structures

Semiconductor science and technology, 2009-03, Vol.24 (3), p.035013-035013 (8)

2009

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Improved AlGaN/GaN Metal-Oxide- Semiconductor High-Electron Mobility Transistors With TiO2 Gate Dielectric Annealed in Nitrogen

AlGaN/GaN Metal Oxide Semiconductor High-Electron Mobility Transistors with Annealed TiO2 as Passivation and Dielectric Layers

Linearity enhancement and noise reduction in a passivated AlGaAs/InGaAs/GaAs high-electron mobility transistor

Large-Signal Linearity and High-Frequency Noise of Passivated AlGaN/GaN High-Electron Mobility Transistors

Temperature Dependence of Current Gain, Ideality Factor, and Offset Voltage of AlGaAs/GaAs and InGaP/GaAs HBTs

Effects of postdeposition annealing on TiO2/GaN/AlGaN/GaN/Si metal-oxide-semiconductor high-electron mobility transistors

Comprehensive characterization of AlGaN/GaN metal‐oxide‐semiconductor high‐electron mobility transistors with TiO2 gate dielectric

Current Gain and Offset Voltage in an InGaP/GaAsSb/GaAs Double Heterojunction Bipolar Transistor

InAlAs/InGaAs/GaAs metamorphic high-electron mobility transistors with selective and nonselective recess gate processes

Effects of surface passivation and temperature on AlGaAs/InGaAs high-electron mobility transistor

Reduction of Turn-on, Knee, and Offset Voltages of InAlGaP/GaAs HBTs Using \delta-Doping in the InAlGaP Emitter

Stability study and effect of passivation on InP/InGaAs double heterojunction bipolar transistors

Novel Delta-Doped InAlGaP/GaAs Heterojunction Bipolar Transistor

Characterization of Interfaces Between Contacts and Active Layer in Organic Photovoltaics Using Impedance Spectroscopy and Equivalent Circuit Model

Microwave and power characteristics of AlGaN GaN Si high-electron mobility transistors with HfO2 and TiO2 passivation

High-temperature stability of improved AlGaN/AlN/GaN HEMT with pre-gate metal treatment

Effects of Selective and Nonselective Wet Gate Recess on InAlAs∕InGaAs Metamorphic Field-Effect Transistors with Double Delta Doping in InGaAs Channels

Performance improvement in tensile-strained In0.5Al0.5As/InxGa1-xAs/In0.5Al0.5As metamorphic HEMT

Performance of Surface and Gate-Engineered AlGaAs∕InGaAs Pseudomorphic High-Electron Mobility Transistors

Optical characterization of InAlAs/InGaAs metamorphic high-electron mobility transistor structures with tensile and compressive strain

High breakdown characteristic δ-doped InGaP/InGaAs/AlGaAs tunneling real-space transfer HEMT

Characteristics of In0.425Al0.575As-InxGa1-xAs metamorphic HEMTs with pseudomorphic and symmetrically graded channels

Thermal-Stable Characteristics of Metamorphic Double δ-Doped Heterostructure Field-Effect Transistor

Effect of Temperature on Novel InAlGaP∕GaAs∕InGaAs Camel-Gate Pseudomorphic High-Electron-Mobility Transistors

Temperature-dependent photoreflectance and photoluminescence characterization of the subband structure and built-in electric field of GaAs/GaInAs graded-channel high electron mobility transistor structures

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