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A 0.063 µm2 FinFET SRAM cell demonstration with conventional lithography using a novel integration scheme with aggressively scaled fin and gate pitch

2010 Symposium on VLSI Technology, 2010, p.19-20

2010

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0.1 um n+-InAs-AlSb-InAs HEMT MMIC Technology for Phased-Array Applications

2007 IEEE Compound Semiconductor Integrated Circuits Symposium, 2007, p.1-4

2007

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0.1 μm In02Al08Sb-InAs HEMT low-noise amplifiers for ultralow-power applications

2007 IEEE International Electron Devices Meeting, 2007, p.617-620

2007

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The 0.125 degree finite-volume general circulation model on the NASA Columbia supercomputer: Preliminary simulations of mesoscale vortices

Geophysical research letters, 2006-03, Vol.33 (5), p.L05801-n/a

2006

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A 0.13µm 8Mb logic based CuxSiyO resistive memory with self-adaptive yield enhancement and operation power reduction

2012 Symposium on VLSI Circuits (VLSIC), 2012, p.42-43

2012

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A 0.13μm CMOS SoC for all-format blue and red laser DVD front-end digital signal processor

2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers, 2006, p.1012-1021

2006

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0.18 Micron BiCMOS Process with Novel Structure SiGeC HBT

ECS transactions, 2011, Vol.34 (1), p.173-181

2011

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A 0.18um Dual Gate (3.5nm/6.8nm) CMOS Technology with Copper Metallurgy for Logic, SRAM, and Analog Applications

29th European Solid-State Device Research Conference, 1999, Vol.1, p.632-635

1999

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A 0.18 mu m foundry RF CMOS technology with 70GHz FT for single chip system solutions

IEEE MTT-S International Microwave Symposium digest, 2001, Vol.1, p.1869-1872

2001

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0.2-μm n-channel and p-channel MOSFETs integrated on oxidation-planarized twin-tubs

IEEE electron device letters, 1996-11, Vol.17 (11), p.500-502

1996

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0.2-mu m n-channel and p-channel MOSFETs integrated onoxidation-planarized twin-tubs

IEEE electron device letters, 1996-11, Vol.17 (11), p.500-502

1996

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The 0.25-nm X-ray structure of the Bowman-Birk-type inhibitor from mung bean in ternary complex with porcine trypsin

European journal of biochemistry, 1993-03, Vol.212 (2), p.549-555

1993

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The 0.25-nm X-ray structure of the Bowmann-Birk-type inhibitor from mung bean in ternary complex with porcine trypsin

European journal of biochemistry, 1993, Vol.212 (2), p.549-555

1993

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A 0.27mm2 13.5dBm 2.4GHz all-digital polar transmitter using 34%-efficiency Class-D DPA in 40nm CMOS

2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers, 2013, p.342-343

2013

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A 0.5-14-GHz 10.6-dB CMOS cascode distributed amplifier

2003 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.03CH37408), 2003, p.139-140

2003

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A 0.5-3.5 Gb/s low-power low-jitter serial data CMOS transceiver

1999 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC. First Edition (Cat. No.99CH36278), 1999, p.352-353

1999

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In(0.5)(Al(x)Ga(1-x))(0.5) HEMTs for high-efficiency low-voltage power amplifiers: design, fabrication, and device results

IEEE transactions on microwave theory and techniques, 1999-08, Vol.47 (8), p.1404-1412

1999

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In(0.5)(Al(x)Ga(1-x))(0.5)P HEMT's for high-efficiency low-voltage power amplifiers - Design, fabrication, and device results

IEEE transactions on microwave theory and techniques, 1999-08, Vol.47 (8), p.1404-1412

1999

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A 0.5 mu m diode load 4 Mb SRAM technology using double-level Al plug metal process

1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers, 1991, p.362-365

1991

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A 0.5/spl mu/m Diode Load 4Mb Sram Technology Using Double-Level Al Plug Metal Process

1991 Symposium on VLSI Technology, 1991, p.29-30

1991

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A 0.5 um Flash Technology suitable for Low Voltage Embedded Applications

27th European Solid-State Device Research Conference, 1997, p.260-263

1997

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0.5981 μm Sum Frequency Mixing in KTP Crystal

Chinese physics letters, 1991-04, Vol.8 (4), p.215-217

1991

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A 0.8-watt Ka-band power amplifier

1992 IEEE MTT-S Microwave Symposium Digest, 1992, Vol.ol. 2, p.529-532 vol.2

1992

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0002 FINE MAPPING GENOME-WIDE ASSOCIATION IN NARCOLEPSY DEFINES NOVEL DISEASE MECHANISMS

Sleep (New York, N.Y.), 2017-04, Vol.40 (suppl_1), p.A1-A1

2017

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0018 Whole Genomic Associations of Transcription Factor Networks With Sleep Disordered Breathing Traits in Trans-Omics for Precision Medicine (TOPMed)

Sleep (New York, N.Y.), 2018-04, Vol.41 (suppl_1), p.A8-A8

2018

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A 0.063 µm2 FinFET SRAM cell demonstration with conventional lithography using a novel integration scheme with aggressively scaled fin and gate pitch

0.1 um n+-InAs-AlSb-InAs HEMT MMIC Technology for Phased-Array Applications

0.1 μm In02Al08Sb-InAs HEMT low-noise amplifiers for ultralow-power applications

The 0.125 degree finite-volume general circulation model on the NASA Columbia supercomputer: Preliminary simulations of mesoscale vortices

A 0.13µm 8Mb logic based CuxSiyO resistive memory with self-adaptive yield enhancement and operation power reduction

A 0.13μm CMOS SoC for all-format blue and red laser DVD front-end digital signal processor

0.18 Micron BiCMOS Process with Novel Structure SiGeC HBT

A 0.18um Dual Gate (3.5nm/6.8nm) CMOS Technology with Copper Metallurgy for Logic, SRAM, and Analog Applications

A 0.18 mu m foundry RF CMOS technology with 70GHz FT for single chip system solutions

0.2-μm n-channel and p-channel MOSFETs integrated on oxidation-planarized twin-tubs

0.2-mu m n-channel and p-channel MOSFETs integrated onoxidation-planarized twin-tubs

The 0.25-nm X-ray structure of the Bowman-Birk-type inhibitor from mung bean in ternary complex with porcine trypsin

The 0.25-nm X-ray structure of the Bowmann-Birk-type inhibitor from mung bean in ternary complex with porcine trypsin

A 0.27mm2 13.5dBm 2.4GHz all-digital polar transmitter using 34%-efficiency Class-D DPA in 40nm CMOS

A 0.5-14-GHz 10.6-dB CMOS cascode distributed amplifier

A 0.5-3.5 Gb/s low-power low-jitter serial data CMOS transceiver

In(0.5)(Al(x)Ga(1-x))(0.5) HEMTs for high-efficiency low-voltage power amplifiers: design, fabrication, and device results

In(0.5)(Al(x)Ga(1-x))(0.5)P HEMT's for high-efficiency low-voltage power amplifiers - Design, fabrication, and device results

A 0.5 mu m diode load 4 Mb SRAM technology using double-level Al plug metal process

A 0.5/spl mu/m Diode Load 4Mb Sram Technology Using Double-Level Al Plug Metal Process

A 0.5 um Flash Technology suitable for Low Voltage Embedded Applications

0.5981 μm Sum Frequency Mixing in KTP Crystal

A 0.8-watt Ka-band power amplifier

0002 FINE MAPPING GENOME-WIDE ASSOCIATION IN NARCOLEPSY DEFINES NOVEL DISEASE MECHANISMS

0018 Whole Genomic Associations of Transcription Factor Networks With Sleep Disordered Breathing Traits in Trans-Omics for Precision Medicine (TOPMed)

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