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Development of a multicopter-carried whole air sampling apparatus and its applications in environmental studies

Chemosphere (Oxford), 2016-02, Vol.144, p.484-492

2016

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Reset Switching Probability of Resistive Switching Devices

IEEE electron device letters, 2011-05, Vol.32 (5), p.590-592

2011

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A study of atmospheric mixing of trace gases by aerial sampling with a multi-rotor drone

Atmospheric environment (1994), 2018-07, Vol.184, p.254-261

2018

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A study of the vertical homogeneity of trace gases in East Asian continental outflow

Chemosphere (Oxford), 2022-06, Vol.297, p.134165-134165, Article 134165

2022

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Variability of resistive switching memories and its impact on crossbar array performance

2011 International Reliability Physics Symposium, 2011, p.MY.7.1-MY.7.4

2011

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Band offset induced threshold variation in strained-Si nMOSFETs

IEEE electron device letters, 2003-09, Vol.24 (9), p.568-570

2003

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Scalability of strained-Si nMOSFETs down to 25 nm gate length

IEEE electron device letters, 2003-05, Vol.24 (5), p.351-353

2003

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Investigation of Two Species of Huang-qi (Aatragalusmembranaceus and Hedysarum polybotrys) by HPLC, ITS,Microscopic Morphology and Antioxidant Activities

Yàowu shi͡p︡in fenxi, 2012-09, Vol.20 (3), p.603-610

2012

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Novel Approach to Reduce Source/Drain Series and Contact Resistance in High-Performance UTSOI CMOS Devices Using Selective Electrodeless CoWP or CoB Process

IEEE electron device letters, 2007-08, Vol.28 (8), p.691-693

2007

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Replacement metal-gate NMOSFETs with ALD TaN/EP-Cu, PVD Ta, and PVD TaN electrode

IEEE electron device letters, 2003-05, Vol.24 (5), p.304-305

2003

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Manufacturability of 20-nm ultrathin body fully depleted SOI devices with FUSI metal gates

IEEE transactions on semiconductor manufacturing, 2005-02, Vol.18 (1), p.5-12

2005

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The effect of annealing temperatures on self-aligned replacement (damascene) TaCN-TaN-stacked gate pMOSFETs

IEEE transactions on electron devices, 2004-04, Vol.51 (4), p.581-586

2004

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A low-temperature metal-doping technique for engineering the gate electrode of replacement metal gate CMOS transistors

IEEE electron device letters, 2003-09, Vol.24 (9), p.547-549

2003

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CVD rhenium and PVD tantalum gate MOSFETs fabricated with a replacement technique

IEEE electron device letters, 2004-12, Vol.25 (12), p.775-777

2004

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Thermal effects and instability in unipolar resistive switching devices

69th Device Research Conference, 2011, p.167-168

2011

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A comprehensive model for crossbar memory arrays

70th Device Research Conference, 2012, p.219-220

2012

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Self-aligned nickel, cobalt/tantalum nitride stacked-gate pMOSFETs fabricated with a low temperature process after metal electrode deposition

IEEE transactions on electron devices, 2003-12, Vol.50 (12), p.2456-2460

2003

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Accurate determination of ultrathin gate oxide thickness and effective polysilicon doping of CMOS devices

IEEE electron device letters, 1997-12, Vol.18 (12), p.580-582

1997

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Time dependent dielectric wearout (TDDW) technique for reliability of ultrathin gate oxides

IEEE electron device letters, 1999-06, Vol.20 (6), p.262-264

1999

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Correlation of Id- and Ig-random telegraph noise to positive bias temperature instability in scaled high-κ/metal gate n-type MOSFETs

2011 International Reliability Physics Symposium, 2011, p.3A.2.1-3A.2.6

2011

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FinFET scaling to 10 nm gate length

Digest. International Electron Devices Meeting, 2002, p.251-254

2002

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Measuring The Work Functions Of PVD TaN, TaSiN And TiSiN Films With A Schottky Diode CV Technique For Metal Gate CMOS Applications

MRS proceedings, 2002, Vol.745, Article N3.2

2002

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Time-dependent dielectric wearout technique with temperature effect for reliability test of ultrathin (<2.0 nm) single layer and dual layer gate oxides

Microelectronics and reliability, 2000-12, Vol.40 (12), p.1987-1995

2000

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Nanoscale CMOS at low temperature: design, reliability, and scaling trend

2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517), 2001, p.23-25

2001

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Novel DRAM cell with amplified capacitor for embedded application

2009 IEEE International Electron Devices Meeting (IEDM), 2009, p.1-4

2009

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Development of a multicopter-carried whole air sampling apparatus and its applications in environmental studies

Reset Switching Probability of Resistive Switching Devices

A study of atmospheric mixing of trace gases by aerial sampling with a multi-rotor drone

A study of the vertical homogeneity of trace gases in East Asian continental outflow

Variability of resistive switching memories and its impact on crossbar array performance

Band offset induced threshold variation in strained-Si nMOSFETs

Scalability of strained-Si nMOSFETs down to 25 nm gate length

Investigation of Two Species of Huang-qi (Aatragalusmembranaceus and Hedysarum polybotrys) by HPLC, ITS,Microscopic Morphology and Antioxidant Activities

Novel Approach to Reduce Source/Drain Series and Contact Resistance in High-Performance UTSOI CMOS Devices Using Selective Electrodeless CoWP or CoB Process

Replacement metal-gate NMOSFETs with ALD TaN/EP-Cu, PVD Ta, and PVD TaN electrode

Manufacturability of 20-nm ultrathin body fully depleted SOI devices with FUSI metal gates

The effect of annealing temperatures on self-aligned replacement (damascene) TaCN-TaN-stacked gate pMOSFETs

A low-temperature metal-doping technique for engineering the gate electrode of replacement metal gate CMOS transistors

CVD rhenium and PVD tantalum gate MOSFETs fabricated with a replacement technique

Thermal effects and instability in unipolar resistive switching devices

A comprehensive model for crossbar memory arrays

Self-aligned nickel, cobalt/tantalum nitride stacked-gate pMOSFETs fabricated with a low temperature process after metal electrode deposition

Accurate determination of ultrathin gate oxide thickness and effective polysilicon doping of CMOS devices

Time dependent dielectric wearout (TDDW) technique for reliability of ultrathin gate oxides

Correlation of Id- and Ig-random telegraph noise to positive bias temperature instability in scaled high-κ/metal gate n-type MOSFETs

FinFET scaling to 10 nm gate length

Measuring The Work Functions Of PVD TaN, TaSiN And TiSiN Films With A Schottky Diode CV Technique For Metal Gate CMOS Applications

Time-dependent dielectric wearout technique with temperature effect for reliability test of ultrathin (<2.0 nm) single layer and dual layer gate oxides

Nanoscale CMOS at low temperature: design, reliability, and scaling trend

Novel DRAM cell with amplified capacitor for embedded application

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