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A 0.01-to-2.6-GHz Two-Fold Current Reuse Dual Noise-Canceling LNA Achieving 6.8-K Noise Temperature for Quantum Applications

IEEE transactions on circuits and systems. II, Express briefs, 2024-05, Vol.71 (5), p.2504-2508

2024

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A 0.05pJ/p-mV 5th-derivative pulse generator for full-band IR-UWB transceiver in 0.18µm CMOS

2011 IEEE Radio and Wireless Symposium, 2011, p.70-73

2011

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A 0.063 µm2 FinFET SRAM cell demonstration with conventional lithography using a novel integration scheme with aggressively scaled fin and gate pitch

2010 Symposium on VLSI Technology, 2010, p.19-20

2010

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0.1-[Formula Omitted] InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71-76 and 81-86 GHz: Impact of Passivation and Gate Recess

IEEE transactions on electron devices, 2016-08, Vol.63 (8)

2016

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0.1- \mu \text InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71-76 and 81-86 GHz: Impact of Passivation and Gate Recess

IEEE transactions on electron devices, 2016-08, Vol.63 (8), p.3076-3083

2016

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0.1 μm In02Al08Sb-InAs HEMT low-noise amplifiers for ultralow-power applications

2007 IEEE International Electron Devices Meeting, 2007, p.617-620

2007

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In 0.11 Ga 0.89 N‐based p‐i‐n photodetector

Physica status solidi. C, 2009-06, Vol.6 (S2)

2009

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A 0.13 mu m CMOS Delta capital sigma fractional-N frequency synthesizer for WLAN transceivers

Journal of semiconductors, 2011-10, Vol.32 (10), p.105005-1-7

2011

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A 0.13 /spl mu/m CMOS technology with 193 nm lithography and Cu/low-k for high performance applications

International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138), 2000, p.563-566

2000

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A 0.13μm CMOS SoC for all-format blue and red laser DVD front-end digital signal processor

2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers, 2006, p.1012-1021

2006

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A 0.13µm CMOS ΔΣ PLL FM transmitter

2011 NORCHIP, 2011, p.1-4

2011

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0.18 [micro sign]m 21–27 GHz CMOS UWB LNA with 9.3±1.3 dB gain and 103.9±8.1 ps group delay

Electronics letters, 2008, Vol.44 (17), p.1014

2008

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0.18 [micro sign]m 3.1–10.6 GHz CMOS UWB LNA with 11.4±0.4 dB gain and 100.7±17.4 ps group-delay

Electronics letters, 2007, Vol.43 (24), p.1359

2007

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0.18 Micron BiCMOS Process with Novel Structure SiGeC HBT

ECS transactions, 2011, Vol.34 (1), p.173-181

2011

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0.18 mm 21-27 GHz CMOS UWB LNA with 9.3±1.3 dB gain and 103.9±8.1 ps group delay

Electronics letters, 2008-08, Vol.44 (17), p.1

2008

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0.18 mm 21-27 GHz CMOS UWB LNA with 9.3 plus or minus 1.3 dB gain and 103.9 plus or minus 8.1 ps group delay

Electronics letters, 2008-08, Vol.44 (17), p.1-1

2008

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0.18 mu m 3.1-10.6 GHz CMOS UWB LNA with 11.4 plus or minus 0.4 dB gain and 100.7 plus or minus 17.4 ps group-delay

Electronics letters, 2007-11, Vol.43 (24), p.1-1

2007

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A 0.18 μm CMOS 10-Gb/S multichannel transmitter with duty-cycle correction

ASIC, 2003. Proceedings. 5th International Conference on, 2003, Vol.1, p.534-536 Vol.1

2003

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A 0.18 μm CMOS Gilbert low noise mixer with noise cancellation

Journal of semiconductors, 2012-02, Vol.33 (2), p.25004-1-5

2012

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0.18 μm 21-27 GHz CMOS UWB LNA with 9.3 ± 1.3 dB gain and 103.9 ± 8.1 ps group delay

Electronics letters, 2008-08, Vol.44 (17), p.1014-1016

2008

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0.18 µm 3.1-10.6 GHz CMOS UWB LNA with 11.4±0.4 dB gain and 100.7±17.4 ps group-delay

Electronics letters, 2007-11, Vol.43 (24), p.1

2007

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0.18 μm 3.1-10.6 GHz CMOS UWB LNA with 11.4±0.4dB gain and 100.7±17.4ps group-delay

Electronics letters, 2007, Vol.43 (24), p.1359-1360

2007

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0.18mum 3.1-10.6GHz CMOS UWB LNA with 11.4+/-0.4dB gain and 100.7+/-17.4ps group-delay

Electronics letters, 2007-11, Vol.43 (24), p.1359-1360

2007

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A 0.18um Dual Gate (3.5nm/6.8nm) CMOS Technology with Copper Metallurgy for Logic, SRAM, and Analog Applications

29th European Solid-State Device Research Conference, 1999, Vol.1, p.632-635

1999

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A 0.18 mu m foundry RF CMOS technology with 70GHz FT for single chip system solutions

IEEE MTT-S International Microwave Symposium digest, 2001, Vol.1, p.1869-1872

2001

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A 0.01-to-2.6-GHz Two-Fold Current Reuse Dual Noise-Canceling LNA Achieving 6.8-K Noise Temperature for Quantum Applications

A 0.05pJ/p-mV 5th-derivative pulse generator for full-band IR-UWB transceiver in 0.18µm CMOS

A 0.063 µm2 FinFET SRAM cell demonstration with conventional lithography using a novel integration scheme with aggressively scaled fin and gate pitch

0.1-[Formula Omitted] InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71-76 and 81-86 GHz: Impact of Passivation and Gate Recess

0.1- \mu \text InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71-76 and 81-86 GHz: Impact of Passivation and Gate Recess

0.1 μm In02Al08Sb-InAs HEMT low-noise amplifiers for ultralow-power applications

In 0.11 Ga 0.89 N‐based p‐i‐n photodetector

A 0.13 mu m CMOS Delta capital sigma fractional-N frequency synthesizer for WLAN transceivers

A 0.13 /spl mu/m CMOS technology with 193 nm lithography and Cu/low-k for high performance applications

A 0.13μm CMOS SoC for all-format blue and red laser DVD front-end digital signal processor

A 0.13µm CMOS ΔΣ PLL FM transmitter

0.18 [micro sign]m 21–27 GHz CMOS UWB LNA with 9.3±1.3 dB gain and 103.9±8.1 ps group delay

0.18 [micro sign]m 3.1–10.6 GHz CMOS UWB LNA with 11.4±0.4 dB gain and 100.7±17.4 ps group-delay

0.18 Micron BiCMOS Process with Novel Structure SiGeC HBT

0.18 mm 21-27 GHz CMOS UWB LNA with 9.3±1.3 dB gain and 103.9±8.1 ps group delay

0.18 mm 21-27 GHz CMOS UWB LNA with 9.3 plus or minus 1.3 dB gain and 103.9 plus or minus 8.1 ps group delay

0.18 mu m 3.1-10.6 GHz CMOS UWB LNA with 11.4 plus or minus 0.4 dB gain and 100.7 plus or minus 17.4 ps group-delay

A 0.18 μm CMOS 10-Gb/S multichannel transmitter with duty-cycle correction

A 0.18 μm CMOS Gilbert low noise mixer with noise cancellation

0.18 μm 21-27 GHz CMOS UWB LNA with 9.3 ± 1.3 dB gain and 103.9 ± 8.1 ps group delay

0.18 µm 3.1-10.6 GHz CMOS UWB LNA with 11.4±0.4 dB gain and 100.7±17.4 ps group-delay

0.18 μm 3.1-10.6 GHz CMOS UWB LNA with 11.4±0.4dB gain and 100.7±17.4ps group-delay

0.18mum 3.1-10.6GHz CMOS UWB LNA with 11.4+/-0.4dB gain and 100.7+/-17.4ps group-delay

A 0.18um Dual Gate (3.5nm/6.8nm) CMOS Technology with Copper Metallurgy for Logic, SRAM, and Analog Applications

A 0.18 mu m foundry RF CMOS technology with 70GHz FT for single chip system solutions

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