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Vibration-Induced Noise in Extremely Low Frequency Magnetic Receiving Antennas

IEEE antennas and wireless propagation letters, 2021-06, Vol.20 (6), p.913-917

2021

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Optoelectronic resistive random access memory for neuromorphic vision sensors

Nature nanotechnology, 2019-08, Vol.14 (8), p.776-782

2019

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Anti-apoptosis effects of codonolactone on cerebral ischemia-reperfusion injury

Journal of investigative medicine, 2022-06, Vol.70 (5), p.1265-1272

2022

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CMOS backend-of-line compatible memory array and logic circuitries enabled by high performance atomic layer deposited ZnO thin-film transistor

Nature communications, 2023-09, Vol.14 (1), p.6079-6079, Article 6079

2023

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Investigation of Tribological Behavior and Lubrication Mechanisms of Zinc Oxide under Poly α‑olefin Lubrication Enhanced by the Electric Field

Langmuir, 2024-04, Vol.40 (13), p.6741-6749

2024

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Contact Resistance Reduction of Low Temperature Atomic Layer Deposition ZnO Thin Film Transistor Using Ar Plasma Surface Treatment

IEEE electron device letters, 2022-06, Vol.43 (6), p.890-893

2022

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Enhancing Wear Resistance and Microstructural Evolution of Brass Through Laser Shock Peening

Tribology letters, 2023-12, Vol.71 (4), p.107, Article 107

2023

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Molecular Dynamics Study on the Mechanism of Improved Tribological Properties of Nano-ZnO with Decanol Lubrication

Tribology letters, 2024-06, Vol.72 (2), p.42, Article 42

2024

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A multi-terminal ion-controlled transistor with multifunctionality and wide temporal dynamics for reservoir computing

Nano research, 2024-05, Vol.17 (5), p.4444-4453

2024

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Analog HfxZr1‐xO2 Memristors with Tunable Linearity for Implementation in a Self‐Organizing Map Neural Network

Advanced electronic materials, 2024-04, Vol.10 (4), p.n/a

2024

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Investigation of long channel bulk MOSFETs threshold voltage model down to 10 mK and key analog parameters at 4K

International journal of numerical modelling, 2024-05, Vol.37 (3)

2024

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Investigation of long channel bulk MOSFETs threshold voltage model down to 10 mK and key analog parameters at 4 K

International journal of numerical modelling, 2024-05, Vol.37 (3), p.n/a

2024

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Analog Hf x Zr 1‐x O 2 Memristors with Tunable Linearity for Implementation in a Self‐Organizing Map Neural Network

Advanced electronic materials, 2024-04, Vol.10 (4)

2024

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Analog Hf x Zr 1‐x O 2 Memristors with Tunable Linearity for Implementation in a Self‐Organizing Map Neural Network (Adv. Electron. Mater. 4/2024)

Advanced electronic materials, 2024-04, Vol.10 (4)

2024

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Analog HfxZr1‐xO2 Memristors with Tunable Linearity for Implementation in a Self‐Organizing Map Neural Network (Adv. Electron. Mater. 4/2024)

Advanced electronic materials, 2024-04, Vol.10 (4), p.n/a

2024

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A Physical Charge-Based Analytical Threshold Voltage Model for Cryogenic CMOS Design

IEEE journal of the Electron Devices Society, 2024, p.1-1

2024

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Improved Performance of Hf x Zn y O‐Based RRAM and its Switching Characteristics down to 4 K Temperature

Advanced electronic materials, 2023-03, Vol.9 (3)

2023

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All Solution-Processed Inorganic, Multilevel Memristors Utilizing Liquid Metals Electrodes Suitable for Analog Computing

ACS omega, 2022-11, Vol.7 (45), p.40911-40919

2022

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Rethinking the Impacts of Overfitting and Feature Quality on Small-scale Video Classification

Proceedings of the 29th ACM International Conference on Multimedia, 2021, p.4760-4764

2021

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Transport Study of PEALD IGZO TFT at Cryogenic Temperatures down to 6 K

2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA), 2024, p.1-2

2024

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Large Area CVD Mos2 Memristor Suitable for Neuromorphic Applications

2023 China Semiconductor Technology International Conference (CSTIC), 2023, p.1-3

2023

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Field-Effect Mobility Enhancement in Low Temperature ALD ZnO Thin-film Transistors via Contact Defects Engineering Suitable for BEOL Integration

2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2022, p.259-261

2022

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HFXZR1-XO2 Ferroelectric Thin Film Grain Size Tuning via Annealing Ramp Rate Achieving Endurance >109 Cycles, 2PR of 40.6μC/CM2, Write Voltage Down to 1.5 V, and Switching Speed of 30 NS

2023 China Semiconductor Technology International Conference (CSTIC), 2023, p.1-3

2023

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Vibration-Induced Noise in Extremely Low Frequency Magnetic Receiving Antennas

Optoelectronic resistive random access memory for neuromorphic vision sensors

Anti-apoptosis effects of codonolactone on cerebral ischemia-reperfusion injury

CMOS backend-of-line compatible memory array and logic circuitries enabled by high performance atomic layer deposited ZnO thin-film transistor

Investigation of Tribological Behavior and Lubrication Mechanisms of Zinc Oxide under Poly α‑olefin Lubrication Enhanced by the Electric Field

Contact Resistance Reduction of Low Temperature Atomic Layer Deposition ZnO Thin Film Transistor Using Ar Plasma Surface Treatment

Enhancing Wear Resistance and Microstructural Evolution of Brass Through Laser Shock Peening

Molecular Dynamics Study on the Mechanism of Improved Tribological Properties of Nano-ZnO with Decanol Lubrication

A multi-terminal ion-controlled transistor with multifunctionality and wide temporal dynamics for reservoir computing

Analog HfxZr1‐xO2 Memristors with Tunable Linearity for Implementation in a Self‐Organizing Map Neural Network

Investigation of long channel bulk MOSFETs threshold voltage model down to 10 mK and key analog parameters at 4K

Investigation of long channel bulk MOSFETs threshold voltage model down to 10 mK and key analog parameters at 4 K

Analog Hf x Zr 1‐x O 2 Memristors with Tunable Linearity for Implementation in a Self‐Organizing Map Neural Network

Analog Hf x Zr 1‐x O 2 Memristors with Tunable Linearity for Implementation in a Self‐Organizing Map Neural Network (Adv. Electron. Mater. 4/2024)

Analog HfxZr1‐xO2 Memristors with Tunable Linearity for Implementation in a Self‐Organizing Map Neural Network (Adv. Electron. Mater. 4/2024)

A Physical Charge-Based Analytical Threshold Voltage Model for Cryogenic CMOS Design

Improved Performance of Hf x Zn y O‐Based RRAM and its Switching Characteristics down to 4 K Temperature

All Solution-Processed Inorganic, Multilevel Memristors Utilizing Liquid Metals Electrodes Suitable for Analog Computing

Rethinking the Impacts of Overfitting and Feature Quality on Small-scale Video Classification

Transport Study of PEALD IGZO TFT at Cryogenic Temperatures down to 6 K

Large Area CVD Mos2 Memristor Suitable for Neuromorphic Applications

Field-Effect Mobility Enhancement in Low Temperature ALD ZnO Thin-film Transistors via Contact Defects Engineering Suitable for BEOL Integration

HFXZR1-XO2 Ferroelectric Thin Film Grain Size Tuning via Annealing Ramp Rate Achieving Endurance >109 Cycles, 2PR of 40.6μC/CM2, Write Voltage Down to 1.5 V, and Switching Speed of 30 NS

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