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Mixed-phase solidification of thin Si films on SiO2

Journal of crystal growth, 2010-09, Vol.312 (19), p.2775-2778

2010

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Effect of process parameters on the structural characteristics of laterally grown, laser-annealed polycrystalline silicon films

Journal of applied physics, 2003-12, Vol.94 (12), p.7445-7452

2003

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Low-Temperature Polycrystalline Silicon Thin-Film Transistors and Circuits on Flexible Substrates

MRS bulletin, 2006-06, Vol.31 (6), p.461-465

2006

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Observation of Superheating of Si at the Si/SiO2 Interface in Pulsed-laser irradiated Si Thin Films

MRS proceedings, 2015, Vol.1770 (1), p.43-48

2015

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Epitaxial Growth Following Crystal Nucleation in Laser-Quenched Si Films on SiO 2

MRS proceedings, 2015, Vol.1770, p.67-72

2015

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Epitaxial Growth Following Crystal Nucleation in Laser-Quenched Si Films on SiO2

MRS proceedings, 2015, Vol.1770 (1), p.67-72

2015

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Analysis of Si-SiO2 Interfacial-Energy Hierarchy via Mixed-Phase Solidification of Si Films on SiO2

MRS proceedings, 2015, Vol.1770 (1), p.55-60

2015

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Analysis of Si-SiO 2 Interfacial-Energy Hierarchy via Mixed-Phase Solidification of Si Films on SiO 2

MRS proceedings, 2015, Vol.1770, p.55-60

2015

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Effect of Film Thickness Variation on (100)-Surface Texturing of MPS Processed Polycrystalline Si Films

MRS proceedings, 2012, Vol.1426 (1), p.257-262

2012

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Flash-Lamp-Induced Lateral Solidification of Thin Si Films

MRS proceedings, 2011, Vol.1321 (1), Article mrss11-1321-a03-04

2011

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Sub-grain Boundary Spacing in Directionally Crystallized Si Films Obtained via Sequential Lateral Solidification

MRS proceedings, 2000, Vol.621, Article Q9.6.1

2000

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Mechanism of Twin Formation in Excimer-laser-induced Lateral Solidification of Si Films

MRS proceedings, 2012, Vol.1426 (1), p.389-394

2012

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Excimer-Laser-Induced Melting and Solidification of PECVD a-Si films under Partial-Melting Conditions

MRS proceedings, 2011, Vol.1321 (1), Article mrss11-1321-a06-10

2011

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On The Mechanism of Nucleation in Pulsed-laser Quenched Si Films on SiO2

MRS proceedings, 2010-01, Vol.1245 (1)

2010

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The role of absolute and constitutional supercooling in zone melting-recrystallization of silicon films

Materials letters, 1990-07, Vol.9 (11), p.456-459

1990

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Control of the structure in zone-melted silicon films on amorphous substrates

Materials letters, 1983, Vol.2 (2), p.93-96

1983

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Artificial epitaxy (graphoepitaxy) as an approach to the formation of SOI

Microelectronic engineering, 1988, Vol.8 (3), p.273-291

1988

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Low-temperature polycrystalline silicon thin-film transistors and circuits on flexible substrates : Macroelectronics

MRS bulletin, 2006, Vol.31 (6), p.461-465

2006

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The Origin and Implications of (111)-Textured Grains Obtained via Nucleation and Growth of Solids in Pulsed-Laser-Quenched Al Films on SiO2

MRS proceedings, 2006, Vol.979

2006

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Mixed-phase solidification of thin Si films on SiO sub(2)

Journal of crystal growth, 2010-09, Vol.312 (19), p.2775-2778

2010

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The Origin and Implications of (111)-Textured Grains Obtained via Nucleation and Growth of Solids in Pulsed-Laser-Quenched Al Films on SiO 2

MRS proceedings, 2006, Vol.979, Article 0979-HH11-50

2006

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Nucleation-Initiated Solidification of Thin Si Films

MRS proceedings, 2006, Vol.979, Article 0979-HH11-22

2006

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Silicon-on-insulator (SOI) structures for pressure sensors

Sensors and actuators. A. Physical., 1991-08, Vol.28 (3), p.215-222

1991

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Sequential Lateral Solidification of Ultra-Thin a-Si Films

MRS proceedings, 2000, Vol.621, Article Q9.9.1

2000

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Characterization & Analysis of Sub-Grain Boundaries in Sequential Lateral Solidification Processed SOI Films

MRS proceedings, 2001, Vol.685, Article D11.3.1

2001

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Mixed-phase solidification of thin Si films on SiO2

Effect of process parameters on the structural characteristics of laterally grown, laser-annealed polycrystalline silicon films

Low-Temperature Polycrystalline Silicon Thin-Film Transistors and Circuits on Flexible Substrates

Observation of Superheating of Si at the Si/SiO2 Interface in Pulsed-laser irradiated Si Thin Films

Epitaxial Growth Following Crystal Nucleation in Laser-Quenched Si Films on SiO 2

Epitaxial Growth Following Crystal Nucleation in Laser-Quenched Si Films on SiO2

Analysis of Si-SiO2 Interfacial-Energy Hierarchy via Mixed-Phase Solidification of Si Films on SiO2

Analysis of Si-SiO 2 Interfacial-Energy Hierarchy via Mixed-Phase Solidification of Si Films on SiO 2

Effect of Film Thickness Variation on (100)-Surface Texturing of MPS Processed Polycrystalline Si Films

Flash-Lamp-Induced Lateral Solidification of Thin Si Films

Sub-grain Boundary Spacing in Directionally Crystallized Si Films Obtained via Sequential Lateral Solidification

Mechanism of Twin Formation in Excimer-laser-induced Lateral Solidification of Si Films

Excimer-Laser-Induced Melting and Solidification of PECVD a-Si films under Partial-Melting Conditions

On The Mechanism of Nucleation in Pulsed-laser Quenched Si Films on SiO2

The role of absolute and constitutional supercooling in zone melting-recrystallization of silicon films

Control of the structure in zone-melted silicon films on amorphous substrates

Artificial epitaxy (graphoepitaxy) as an approach to the formation of SOI

Low-temperature polycrystalline silicon thin-film transistors and circuits on flexible substrates : Macroelectronics

The Origin and Implications of (111)-Textured Grains Obtained via Nucleation and Growth of Solids in Pulsed-Laser-Quenched Al Films on SiO2

Mixed-phase solidification of thin Si films on SiO sub(2)

The Origin and Implications of (111)-Textured Grains Obtained via Nucleation and Growth of Solids in Pulsed-Laser-Quenched Al Films on SiO 2

Nucleation-Initiated Solidification of Thin Si Films

Silicon-on-insulator (SOI) structures for pressure sensors

Sequential Lateral Solidification of Ultra-Thin a-Si Films

Characterization & Analysis of Sub-Grain Boundaries in Sequential Lateral Solidification Processed SOI Films

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