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Field-induced nucleation in threshold switching characteristics of electrochemical metallization devices

Applied physics letters, 2017-08, Vol.111 (6)

2017

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Self-Limited CBRAM With Threshold Selector for 1S1R Crossbar Array Applications

IEEE electron device letters, 2017-11, Vol.38 (11), p.1532-1535

2017

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IEEE_Xplore

DSLR: Deep Stacked Laplacian Restorer for Low-Light Image Enhancement

IEEE transactions on multimedia, 2021, Vol.23, p.4272-4284

2021

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IEEE_Xplore

An excellent performance of a C-Te OTS device with amorphous Ge interfacial layer for selector application

Applied physics letters, 2019-03, Vol.114 (10)

2019

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Effects of Liner Thickness on the Reliability of AgTe/TiO2-Based Threshold Switching Devices

IEEE transactions on electron devices, 2017-11, Vol.64 (11), p.4763-4767

2017

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IEEE_Xplore

Various Threshold Switching Devices for Integrate and Fire Neuron Applications

Advanced electronic materials, 2019-09, Vol.5 (9), p.n/a

2019

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CMOS compatible low-power volatile atomic switch for steep-slope FET devices

Applied physics letters, 2018-07, Vol.113 (3)

2018

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Monocular Depth Estimation Using Laplacian Pyramid-Based Depth Residuals

IEEE transactions on circuits and systems for video technology, 2021-11, Vol.31 (11), p.4381-4393

2021

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IEEE_Xplore

Retention modeling for ultra-thin density of Cu-based conductive bridge random access memory (CBRAM)

AIP advances, 2016-02, Vol.6 (2), p.025203-025203-7

2016

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Investigation of I-V Linearity in TaOx-Based RRAM Devices for Neuromorphic Applications

IEEE journal of the Electron Devices Society, 2019, Vol.7, p.404-408

2019

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One-Class Learning Method Based on Live Correlation Loss for Face Anti-Spoofing

IEEE access, 2020, Vol.8, p.201635-201648

2020

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Improved reset breakdown strength in a HfOx-based resistive memory by introducing RuOx oxygen diffusion barrier

AIP advances, 2016-05, Vol.6 (5), p.055114-055114-6

2016

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Improved Synaptic Behavior of CBRAM Using Internal Voltage Divider for Neuromorphic Systems

IEEE transactions on electron devices, 2018-09, Vol.65 (9), p.3976-3981

2018

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IEEE_Xplore

One transistor-two resistive RAM device for realizing bidirectional and analog neuromorphic synapse devices

Nanotechnology, 2019-11, Vol.30 (45), p.455201-455201

2019

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Understanding of proton induced synaptic behaviors in three-terminal synapse device for neuromorphic systems

Nanotechnology, 2019-06, Vol.30 (25), p.255202-255202

2019

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Deep Spectral-Spatial Network for Single Image Deblurring

IEEE signal processing letters, 2020, Vol.27, p.835-839

2020

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IEEE_Xplore

Experimental Determination of the Tunable Threshold Voltage Characteristics in a AgₓTe₁₋ₓ/Al₂O₃/TiO₂-Based Hybrid Memory Device

IEEE electron device letters, 2020-05, Vol.41 (5), p.713-716

2020

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IEEE_Xplore

Excellent synaptic behavior of lithium-based nano-ionic transistor based on optimal WO2.7 stoichiometry with high ion diffusivity

Nanotechnology, 2020-03, Vol.31 (23), p.235203-235203

2020

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Controllable quantized conductance for multilevel data storage applications using conductive bridge random access memory

Nanotechnology, 2017-03, Vol.28 (11), p.115707-115707

2017

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Effect of conductance linearity and multi-level cell characteristics of TaOx-based synapse device on pattern recognition accuracy of neuromorphic system

Nanotechnology, 2018-03, Vol.29 (11), p.115203-115203

2018

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Improved Synapse Device With MLC and Conductance Linearity Using Quantized Conduction for Neuromorphic Systems

IEEE electron device letters, 2018-02, Vol.39 (2), p.312-315

2018

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IEEE_Xplore

Microstructural engineering in interface-type synapse device for enhancing linear and symmetric conductance changes

Nanotechnology, 2019-07, Vol.30 (30), p.305202-305202

2019

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Excellent synaptic behavior of lithium-based nano-ionic transistor based on optimal WO 2.7 stoichiometry with high ion diffusivity

Nanotechnology, 2020-03, Vol.31 (23), p.235203

2020

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Reliable Ge2Sb2Te5‐Integrated High‐Density Nanoscale Conductive Bridge Random Access Memory using Facile Nitrogen‐Doping Strategy

Advanced electronic materials, 2018-11, Vol.4 (11), p.n/a

2018

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Edge-Protected Ni-Enriched LiNi x Co y Mn z O2 Cathode Materials by Interface Modification with a Si- and F‑Functionalized Surface Modifier

ACS sustainable chemistry & engineering, 2023-03, Vol.11 (11), p.4342-4352

2023

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Field-induced nucleation in threshold switching characteristics of electrochemical metallization devices

Self-Limited CBRAM With Threshold Selector for 1S1R Crossbar Array Applications

DSLR: Deep Stacked Laplacian Restorer for Low-Light Image Enhancement

An excellent performance of a C-Te OTS device with amorphous Ge interfacial layer for selector application

Effects of Liner Thickness on the Reliability of AgTe/TiO2-Based Threshold Switching Devices

Various Threshold Switching Devices for Integrate and Fire Neuron Applications

CMOS compatible low-power volatile atomic switch for steep-slope FET devices

Monocular Depth Estimation Using Laplacian Pyramid-Based Depth Residuals

Retention modeling for ultra-thin density of Cu-based conductive bridge random access memory (CBRAM)

Investigation of I-V Linearity in TaOx-Based RRAM Devices for Neuromorphic Applications

One-Class Learning Method Based on Live Correlation Loss for Face Anti-Spoofing

Improved reset breakdown strength in a HfOx-based resistive memory by introducing RuOx oxygen diffusion barrier

Improved Synaptic Behavior of CBRAM Using Internal Voltage Divider for Neuromorphic Systems

One transistor-two resistive RAM device for realizing bidirectional and analog neuromorphic synapse devices

Understanding of proton induced synaptic behaviors in three-terminal synapse device for neuromorphic systems

Deep Spectral-Spatial Network for Single Image Deblurring

Experimental Determination of the Tunable Threshold Voltage Characteristics in a AgₓTe₁₋ₓ/Al₂O₃/TiO₂-Based Hybrid Memory Device

Excellent synaptic behavior of lithium-based nano-ionic transistor based on optimal WO2.7 stoichiometry with high ion diffusivity

Controllable quantized conductance for multilevel data storage applications using conductive bridge random access memory

Effect of conductance linearity and multi-level cell characteristics of TaOx-based synapse device on pattern recognition accuracy of neuromorphic system

Improved Synapse Device With MLC and Conductance Linearity Using Quantized Conduction for Neuromorphic Systems

Microstructural engineering in interface-type synapse device for enhancing linear and symmetric conductance changes

Excellent synaptic behavior of lithium-based nano-ionic transistor based on optimal WO 2.7 stoichiometry with high ion diffusivity

Reliable Ge2Sb2Te5‐Integrated High‐Density Nanoscale Conductive Bridge Random Access Memory using Facile Nitrogen‐Doping Strategy

Edge-Protected Ni-Enriched LiNi x Co y Mn z O2 Cathode Materials by Interface Modification with a Si- and F‑Functionalized Surface Modifier

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