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Spontaneous sparse learning for PCM-based memristor neural networks

Nature communications, 2021-01, Vol.12 (1), p.319-319, Article 319

2021

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Heterogeneously structured phase-change materials and memory

Journal of applied physics, 2021-02, Vol.129 (5)

2021

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Wafer‐Scale Memristor Array Based on Aligned Grain Boundaries of 2D Molybdenum Ditelluride for Application to Artificial Synapses

Advanced functional materials, 2024-04, Vol.34 (15), p.n/a

2024

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Molecularly Reconfigurable Neuroplasticity of Layered Artificial Synapse Electronics

Advanced functional materials, 2024-05, Vol.34 (22), p.n/a

2024

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Exploring Cycle-to-Cycle and Device-to-Device Variation Tolerance in MLC Storage-Based Neural Network Training

IEEE transactions on electron devices, 2019-05, Vol.66 (5), p.2172-2178

2019

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Controlling resistive switching behavior in the solution processed SiO2-x device by the insertion of TiO2 nanoparticles

Scientific reports, 2022-05, Vol.12 (1), p.8405-8405, Article 8405

2022

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Modulation of phase change characteristics in Ag-incorporated Ge2Sb2Te5 owing to changes in structural distortion and bond strength

Journal of materials chemistry. C, Materials for optical and electronic devices, 2017, Vol.5 (16), p.3973-3982

2017

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Investigating the Polarity Dependence of Multilevel Cell Operation in Conventional Mushroom Phase‐Change Memory Cells

Physica status solidi. PSS-RRL. Rapid research letters, 2023-11

2023

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Double-Floating-Gate van der Waals Transistor for High-Precision Synaptic Operations

ACS nano, 2023-04, Vol.17 (8), p.7384-7393

2023

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Filamentary and Interface-Type Memristors Based on Tantalum Oxide for Energy-Efficient Neuromorphic Hardware

ACS applied materials & interfaces, 2022-10, Vol.14 (39), p.44561-44571

2022

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Forming-less flexible memristor crossbar array for neuromorphic computing applications produced using low-temperature atomic layer deposition

Applied materials today, 2024-06, Vol.38, p.102204, Article 102204

2024

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Characterization of Rotational Stacking Layers in Large-Area MoSe2 Film Grown by Molecular Beam Epitaxy and Interaction with Photon

ACS applied materials & interfaces, 2017-09, Vol.9 (36), p.30786-30796

2017

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Filament Geometry Induced Bipolar, Complementary, and Unipolar Resistive Switching under the Same Set Current Compliance in Pt/SiOx/TiN

Scientific reports, 2015-10, Vol.5 (1), p.15374-15374, Article 15374

2015

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Effect of SiO2 tunnel layer processes on the characteristics of MONOS charge trap devices with poly-Si channels

Microelectronic engineering, 2013-10, Vol.110, p.6-11

2013

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Controlling resistive switching behavior in the solution processed SiO 2-x device by the insertion of TiO 2 nanoparticles

Scientific reports, 2022-05, Vol.12 (1), p.8405

2022

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Characterization of Rotational Stacking Layers in Large-Area MoSe 2 Film Grown by Molecular Beam Epitaxy and Interaction with Photon

ACS applied materials & interfaces, 2017-09, Vol.9 (36), p.30786-30796

2017

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Electric field effect dominated bipolar resistive switching through interface control in a Pt/TiO 2 /TiN structure

RSC advances, 2015, Vol.5 (1), p.221-230

2015

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Modulation of phase change characteristics in Ag-incorporated Ge 2 Sb 2 Te 5 owing to changes in structural distortion and bond strength

Journal of materials chemistry. C, Materials for optical and electronic devices, 2017, Vol.5 (16), p.3973-3982

2017

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Effects of oxygen incorporation in GeSbTe films on electrical properties and thermal stability

Applied physics letters, 2010-03, Vol.96 (9), p.092108-092108-3

2010

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Electric field effect dominated bipolar resistive switching through interface control in a Pt/TiO sub(2)/TiN structure

RSC advances, 2014-12, Vol.5 (1), p.221-230

2014

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Electric field effect dominated bipolar resistive switching through interface control in a Pt/TiO2/TiN structureElectronic supplementary information (ESI) available. See DOI: 10.1039/c4ra09443c

2014-12

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Plant homeodomain finger protein 2 promotes bone formation by demethylating and activating Runx2 for osteoblast differentiation

Cell research, 2014-10, Vol.24 (10), p.1231-1249

2014

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Interregional synaptic maps among engram cells underlie memory formation

Science (American Association for the Advancement of Science), 2018-04, Vol.360 (6387), p.430-435

2018

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A Transparent Nanopatterned Chemiresistor: Visible‐Light Plasmonic Sensor for Trace‐Level NO2 Detection at Room Temperature

Small (Weinheim an der Bergstrasse, Germany), 2021-05, Vol.17 (20), p.n/a

2021

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Sedimentary evolution of the Nakdong River deposits on the Korea Strait shelf since the Last Glacial Maximum

Marine geology, 2024-04, Vol.470, p.107254, Article 107254

2024

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Spontaneous sparse learning for PCM-based memristor neural networks

Heterogeneously structured phase-change materials and memory

Wafer‐Scale Memristor Array Based on Aligned Grain Boundaries of 2D Molybdenum Ditelluride for Application to Artificial Synapses

Molecularly Reconfigurable Neuroplasticity of Layered Artificial Synapse Electronics

Exploring Cycle-to-Cycle and Device-to-Device Variation Tolerance in MLC Storage-Based Neural Network Training

Controlling resistive switching behavior in the solution processed SiO2-x device by the insertion of TiO2 nanoparticles

Modulation of phase change characteristics in Ag-incorporated Ge2Sb2Te5 owing to changes in structural distortion and bond strength

Investigating the Polarity Dependence of Multilevel Cell Operation in Conventional Mushroom Phase‐Change Memory Cells

Double-Floating-Gate van der Waals Transistor for High-Precision Synaptic Operations

Filamentary and Interface-Type Memristors Based on Tantalum Oxide for Energy-Efficient Neuromorphic Hardware

Forming-less flexible memristor crossbar array for neuromorphic computing applications produced using low-temperature atomic layer deposition

Characterization of Rotational Stacking Layers in Large-Area MoSe2 Film Grown by Molecular Beam Epitaxy and Interaction with Photon

Filament Geometry Induced Bipolar, Complementary, and Unipolar Resistive Switching under the Same Set Current Compliance in Pt/SiOx/TiN

Effect of SiO2 tunnel layer processes on the characteristics of MONOS charge trap devices with poly-Si channels

Controlling resistive switching behavior in the solution processed SiO 2-x device by the insertion of TiO 2 nanoparticles

Characterization of Rotational Stacking Layers in Large-Area MoSe 2 Film Grown by Molecular Beam Epitaxy and Interaction with Photon

Electric field effect dominated bipolar resistive switching through interface control in a Pt/TiO 2 /TiN structure

Modulation of phase change characteristics in Ag-incorporated Ge 2 Sb 2 Te 5 owing to changes in structural distortion and bond strength

Effects of oxygen incorporation in GeSbTe films on electrical properties and thermal stability

Electric field effect dominated bipolar resistive switching through interface control in a Pt/TiO sub(2)/TiN structure

Electric field effect dominated bipolar resistive switching through interface control in a Pt/TiO2/TiN structureElectronic supplementary information (ESI) available. See DOI: 10.1039/c4ra09443c

Plant homeodomain finger protein 2 promotes bone formation by demethylating and activating Runx2 for osteoblast differentiation

Interregional synaptic maps among engram cells underlie memory formation

A Transparent Nanopatterned Chemiresistor: Visible‐Light Plasmonic Sensor for Trace‐Level NO2 Detection at Room Temperature

Sedimentary evolution of the Nakdong River deposits on the Korea Strait shelf since the Last Glacial Maximum

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