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Novel Bumping Material for Solder‐on‐Pad Technology

ETRI Journal, 2011, 33(4), , pp.637-640

2011

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Novel Maskless Bumping for 3D Integration

ETRI Journal, 2010, 32(2), , pp.342-344

2010

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A Novel 94-GHz MHMET-Based Diode Mixer Using a 3-dB Tandem Coupler

IEEE microwave and wireless components letters, 2008-09, Vol.18 (9), p.626-628

2008

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Low conversion loss and high LO-RF isolation 94-GHz active down converter

IEEE transactions on microwave theory and techniques, 2006-06, Vol.54 (6), p.2422-2430

2006

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Two-stage broadband high-gain W-band amplifier using 0.1-μm metamorphic HEMT technology

IEEE electron device letters, 2004-12, Vol.25 (12), p.766-768

2004

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Growth and analysis of modulation-doped AlGaN/GaN heterostructure on semi-insulating SiC substrate

Journal of crystal growth, 2014-06, Vol.395, p.5-8

2014

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Hybrid ring coupler for W-band MMIC applications using MEMS technology

IEEE microwave and wireless components letters, 2005-10, Vol.15 (10), p.652-654

2005

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High switching performance 0.1-μm metamorphic HEMTs for low conversion loss 94-GHz resistive mixers

IEEE electron device letters, 2005-10, Vol.26 (10), p.707-709

2005

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Effect of a two-step recess process using atomic layer etching on the performance of In0.52Al0.48As/In0.53Ga0.47As p-HEMTs

IEEE electron device letters, 2007-12, Vol.28 (12), p.1086-1088

2007

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W-band resistive mixer using metamorphic HEMT

Current Applied Physics, 2006, 6(5), , pp.821-826

2006

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Design and fabrication of a 180° hybrid ring coupler inserted into a slow-wave structure for MMIC applications using dielectric-supported air-gapped microstriplines

Microwave and optical technology letters, 2005-12, Vol.47 (5), p.440-443

2005

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50-nm T-Gate InAlAs/InGaAs Metamorphic HEMTs With Low Noise and High f Characteristics

IEEE electron device letters, 2007-07, Vol.28 (7), p.546-548

2007

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High-performance 94-GHz single balanced mixer using 70-nm MHEMTs and surface micromachined technology

IEEE electron device letters, 2006-01, Vol.27 (1), p.28-30

2006

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Novel Bumping Material for Solder-on-Pad Technology

ETRI journal, 2011-08, Vol.33 (4), p.637-640

2011

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Novel Maskless Bumping for 3D Integration

ETRI journal, 2010-04, Vol.32 (2), p.342-344

2010

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Effects of Gate-Recess Structure on High-Frequency Characteristics of 0.1 μm Metamorphic HEMTs

Journal of the Electrochemical Society, 2007, Vol.154 (7), p.H541

2007

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The Fabrication of the Low Loss Transmission Line and Low Pass Filter using Surface Microelectromechanical Systems Technology

Japanese Journal of Applied Physics, 2004, Vol.43 (5R), p.2786-2790

2004

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50-nm T-gate InAlAs/InGaAs metamorphic HEMTs with low noise and high fT characteristics

IEEE electron device letters, 2007-07, Vol.28 (7), p.546-548

2007

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Analysis of the Short-Channel Effect in 50 nm InAlAs/InGaAs Metamorphic High Electron Mobility Transistors

Journal of the Korean Physical Society, 2008-12, Vol.53 (6), p.3267-3272

2008

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Effect of a Two-Step Recess Process Using Atomic Layer Etching on the Performance of \hbox\hbox\hbox\hbox\hbox p-HEMTs

IEEE electron device letters, 2007-12, Vol.28 (12), p.1086-1088

2007

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Study of the fabrication of PHEMTs for a 0.1 μm scale Γ-gate using electron beam lithography: structure, fabrication, and characteristics

Microelectronic engineering, 2002-09, Vol.63 (4), p.417-431

2002

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Q-band high conversion gain active sub-harmonic mixer

Current Applied Physics, 2004, 4(1), , pp.69-74

2004

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Fabrication of new micromachined transmission line with dielectric posts for millimeter-wave applications

Journal of micromechanics and microengineering, 2004-05, Vol.14 (5), p.746-749

2004

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Comparative Study on Breakdown Characteristics for InGaAs Metamorphic High Electron Mobility Transistor and InGaAs/InP-Composite Channel Metamorphic High Electron Mobility Transistor

IEICE transactions on electronics, 2006-05, Vol.E89-C (5), p.616-621

CHOI, S. G.

2006

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Optimized TSV process using bottom-up electroplating without wafer cracks

2010 Proceedings 60th Electronic Components and Technology Conference (ECTC), 2010, p.1642-1646

2010

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Novel Bumping Material for Solder‐on‐Pad Technology

Novel Maskless Bumping for 3D Integration

A Novel 94-GHz MHMET-Based Diode Mixer Using a 3-dB Tandem Coupler

Low conversion loss and high LO-RF isolation 94-GHz active down converter

Two-stage broadband high-gain W-band amplifier using 0.1-μm metamorphic HEMT technology

Growth and analysis of modulation-doped AlGaN/GaN heterostructure on semi-insulating SiC substrate

Hybrid ring coupler for W-band MMIC applications using MEMS technology

High switching performance 0.1-μm metamorphic HEMTs for low conversion loss 94-GHz resistive mixers

Effect of a two-step recess process using atomic layer etching on the performance of In0.52Al0.48As/In0.53Ga0.47As p-HEMTs

W-band resistive mixer using metamorphic HEMT

Design and fabrication of a 180° hybrid ring coupler inserted into a slow-wave structure for MMIC applications using dielectric-supported air-gapped microstriplines

50-nm T-Gate InAlAs/InGaAs Metamorphic HEMTs With Low Noise and High f Characteristics

High-performance 94-GHz single balanced mixer using 70-nm MHEMTs and surface micromachined technology

Novel Bumping Material for Solder-on-Pad Technology

Novel Maskless Bumping for 3D Integration

Effects of Gate-Recess Structure on High-Frequency Characteristics of 0.1 μm Metamorphic HEMTs

The Fabrication of the Low Loss Transmission Line and Low Pass Filter using Surface Microelectromechanical Systems Technology

50-nm T-gate InAlAs/InGaAs metamorphic HEMTs with low noise and high fT characteristics

Analysis of the Short-Channel Effect in 50 nm InAlAs/InGaAs Metamorphic High Electron Mobility Transistors

Effect of a Two-Step Recess Process Using Atomic Layer Etching on the Performance of \hbox\hbox\hbox\hbox\hbox p-HEMTs

Study of the fabrication of PHEMTs for a 0.1 μm scale Γ-gate using electron beam lithography: structure, fabrication, and characteristics

Q-band high conversion gain active sub-harmonic mixer

Fabrication of new micromachined transmission line with dielectric posts for millimeter-wave applications

Comparative Study on Breakdown Characteristics for InGaAs Metamorphic High Electron Mobility Transistor and InGaAs/InP-Composite Channel Metamorphic High Electron Mobility Transistor

Optimized TSV process using bottom-up electroplating without wafer cracks

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