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Recombination behavior and contact resistance of n+ and p+ poly-crystalline Si/mono-crystalline Si junctions

Solar energy materials and solar cells, 2014-12, Vol.131, p.85-91

2014

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Realistic efficiency potential of next-generation industrial Czochralski-grown silicon solar cells after deactivation of the boron-oxygen-related defect center

Progress in photovoltaics, 2016-07, Vol.24 (7), p.920-928

2016

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Simulation-based roadmap for the integration of poly-silicon on oxide contacts into screen-printed crystalline silicon solar cells

Scientific reports, 2021-01, Vol.11 (1), p.996-14, Article 996

2021

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Ion Implantation for Poly-Si Passivated Back-Junction Back-Contacted Solar Cells

IEEE journal of photovoltaics, 2015-03, Vol.5 (2), p.507-514

2015

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Generation and annihilation of boron-oxygen-related recombination centers in compensated p - and n -type silicon

Journal of applied physics, 2010-11, Vol.108 (10), p.103722-103722-9

2010

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Impact of oxygen on the permanent deactivation of boron-oxygen-related recombination centers in crystalline silicon

Journal of applied physics, 2010-06, Vol.107 (12), p.123707-123707-4

2010

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Impact of dopant compensation on the deactivation of boron-oxygen recombination centers in crystalline silicon

Applied physics letters, 2009-12, Vol.95 (23), p.232109-232109-3

2009

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Towards BIM-based digital twinning of BIPV(T)-façades

E3S web of conferences, 2024, Vol.546, p.2001

2024

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Deactivation of the boron-oxygen recombination center in silicon by illumination at elevated temperature

Physica status solidi. PSS-RRL. Rapid research letters, 2008-06, Vol.2 (3), p.93-95

2008

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A Simple Model Describing the Symmetric $I\hbox{--}V$ Characteristics of $\hbox{p}$ Polycrystalline Si/ $\hbox{n}$ Monocrystalline Si, and $\hbox{n}$ Polycrystalline Si/ $\hbox{p}$ Monocrystalline Si Junctions

IEEE journal of photovoltaics, 2014-05, Vol.4 (3), p.841-850

2014

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Improved Calculation of the Power Gain of Vertical PV Modules due to Ground Reflection Using the Ground View Factor

IEEE journal of photovoltaics, 2022-11, Vol.12 (6), p.1567-1575

2022

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For none, one, or two polarities—How do POLO junctions fit best into industrial Si solar cells?

Progress in photovoltaics, 2020-06, Vol.28 (6), p.503-516

2020

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Femtosecond laser ablation of dielectric layers for high-efficiency silicon wafer solar cells

Solar energy, 2018-04, Vol.164, p.287-291

2018

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Postproduction Coloring of Photovoltaic Modules With Imprinted Textiles

IEEE journal of photovoltaics, 2021-01, Vol.11 (1), p.138-143

2021

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Printable liquid silicon for local doping of solar cells

Solar energy materials and solar cells, 2018-06, Vol.179, p.129-135

2018

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21.0%-efficient screen-printed n-PERT back-junction silicon solar cell with plasma-deposited boron diffusion source

Solar energy materials and solar cells, 2016-12, Vol.158, p.50-54

2016

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Loss Analysis of n-Type Passivated Emitter Rear Totally Diffused Back-Junction Silicon Solar Cells with Efficiencies up to 21.2

IEEE journal of photovoltaics, 2016-03, Vol.6 (2), p.447-453

2016

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21% efficient screen-printed n-type silicon wafer solar cells with implanted phosphorus front surface field

Solar energy materials and solar cells, 2018-11, Vol.186, p.124-130

2018

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Determination of the Contact Resistivity of Screen-printed Al Contacts Formed by Laser Contact Opening

Energy procedia, 2015-04, Vol.67, p.64-69

2015

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Carrier mobilities in multicrystalline silicon wafers made from UMG-Si

Physica status solidi. C, 2011-03, Vol.8 (3), p.835-838

2011

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Photovoltaic Modules with the Look and Feel of a Stone Façade for Building Integration

Solar RRL, 2022-05, Vol.6 (5), p.n/a

2022

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Efficiency Potential of P-Type Al2O3/SiN Passivated PERC Solar Cells With Locally Laser-Doped Rear Contacts

IEEE journal of photovoltaics, 2016-05, Vol.6 (3), p.624-631

2016

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Efficiency Potential of P-Type Al 2 O 3 /SiN$_{x}$ Passivated PERC Solar Cells With Locally Laser-Doped Rear Contacts

IEEE journal of photovoltaics, 2016-05, Vol.6 (3), p.624-631

2016

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21.0%-efficient co-diffused screen printed n-type silicon solar cell with rear-side boron emitter

Physica status solidi. PSS-RRL. Rapid research letters, 2016-02, Vol.10 (2), p.148-152

2016

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Lifetime recovery in p -type Czochralski silicon due to the reconfiguration of boron-oxygen complexes via a hole-emitting process

Applied physics letters, 2011-04, Vol.98 (16), p.162104-162104-3

2011

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Recombination behavior and contact resistance of n+ and p+ poly-crystalline Si/mono-crystalline Si junctions

Realistic efficiency potential of next-generation industrial Czochralski-grown silicon solar cells after deactivation of the boron-oxygen-related defect center

Simulation-based roadmap for the integration of poly-silicon on oxide contacts into screen-printed crystalline silicon solar cells

Ion Implantation for Poly-Si Passivated Back-Junction Back-Contacted Solar Cells

Generation and annihilation of boron-oxygen-related recombination centers in compensated p - and n -type silicon

Impact of oxygen on the permanent deactivation of boron-oxygen-related recombination centers in crystalline silicon

Impact of dopant compensation on the deactivation of boron-oxygen recombination centers in crystalline silicon

Towards BIM-based digital twinning of BIPV(T)-façades

Deactivation of the boron-oxygen recombination center in silicon by illumination at elevated temperature

A Simple Model Describing the Symmetric $I\hbox{--}V$ Characteristics of $\hbox{p}$ Polycrystalline Si/ $\hbox{n}$ Monocrystalline Si, and $\hbox{n}$ Polycrystalline Si/ $\hbox{p}$ Monocrystalline Si Junctions

Improved Calculation of the Power Gain of Vertical PV Modules due to Ground Reflection Using the Ground View Factor

For none, one, or two polarities—How do POLO junctions fit best into industrial Si solar cells?

Femtosecond laser ablation of dielectric layers for high-efficiency silicon wafer solar cells

Postproduction Coloring of Photovoltaic Modules With Imprinted Textiles

Printable liquid silicon for local doping of solar cells

21.0%-efficient screen-printed n-PERT back-junction silicon solar cell with plasma-deposited boron diffusion source

Loss Analysis of n-Type Passivated Emitter Rear Totally Diffused Back-Junction Silicon Solar Cells with Efficiencies up to 21.2

21% efficient screen-printed n-type silicon wafer solar cells with implanted phosphorus front surface field

Determination of the Contact Resistivity of Screen-printed Al Contacts Formed by Laser Contact Opening

Carrier mobilities in multicrystalline silicon wafers made from UMG-Si

Photovoltaic Modules with the Look and Feel of a Stone Façade for Building Integration

Efficiency Potential of P-Type Al2O3/SiN Passivated PERC Solar Cells With Locally Laser-Doped Rear Contacts

Efficiency Potential of P-Type Al 2 O 3 /SiN$_{x}$ Passivated PERC Solar Cells With Locally Laser-Doped Rear Contacts

21.0%-efficient co-diffused screen printed n-type silicon solar cell with rear-side boron emitter

Lifetime recovery in p -type Czochralski silicon due to the reconfiguration of boron-oxygen complexes via a hole-emitting process

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