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Plasma application in atomic layer etching

Physics of plasmas, 2023-08, Vol.30 (8)

2023

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Thermal atomic layer etching: A review

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2021-05, Vol.39 (3)

2021

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Atomic Layer Processing: Semiconductor Dry Etching Technology

Lill, Thorsten

1, 2021

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Overview of atomic layer etching in the semiconductor industry

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2015-03, Vol.33 (2)

2015

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Thermal etching of AlF3 and thermal atomic layer etching of Al2O3

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2020-03, Vol.38 (2)

2020

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Predicting synergy in atomic layer etching

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2017-09, Vol.35 (5)

2017

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Directional etch of magnetic and noble metals. II. Organic chemical vapor etch

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2017-09, Vol.35 (5)

2017

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Applying sputtering theory to directional atomic layer etching

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2018-01, Vol.36 (1)

2018

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Directional etch of magnetic and noble metals. I. Role of surface oxidation states

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2017-09, Vol.35 (5)

2017

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Neutral transport during etching of high aspect ratio features

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2023-05, Vol.41 (3)

2023

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Ion Beam Patterning of High-Density STT-RAM Devices

IEEE transactions on magnetics, 2017-02, Vol.53 (2), p.1-4

2017

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Reducing damage to Si substrates during gate etching processes by synchronous plasma pulsing

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2010-09, Vol.28 (5), p.926-934

2010

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Highly Selective Directional Atomic Layer Etching of Silicon

ECS journal of solid state science and technology, 2015-01, Vol.4 (6), p.N5010-N5012

2015

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SiCl4/Cl2 plasmas: A new chemistry to etch high-k materials selectively to Si-based materials

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2012-03, Vol.30 (2)

2012

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Spontaneous Etching of Metal Fluorides Using Ligand-Exchange Reactions: Landscape Revealed by Mass Spectrometry

Chemistry of materials, 2021-10, Vol.33 (19), p.7719-7730

2021

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Causes of anisotropy in thermal atomic layer etching of nanostructures

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2020-07, Vol.38 (4)

2020

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Volatile Products from Ligand Addition of P(CH 3 ) 3 to NiCl 2 , PdCl 2 , and PtCl 2 : Pathway for Metal Thermal Atomic Layer Etching

Journal of physical chemistry. C, 2022-05, Vol.126 (19), p.8287-8295

2022

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Surface reaction modelling of thermal atomic layer etching on blanket hafnium oxide and its application on high aspect ratio structures

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2023-01, Vol.41 (1)

2023

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Effectiveness of Different Ligands on Silane Precursors for Ligand Exchange to Etch Metal Fluorides

Chemistry of materials, 2022-10, Vol.34 (19), p.8641-8653

2022

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Control of etch profiles in high aspect ratio holes via precise reactant dosing in thermal atomic layer etching

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2022-03, Vol.40 (2)

2022

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Thermal Atomic Layer Etching of CoO, ZnO, Fe2O3, and NiO by Chlorination and Ligand Addition Using SO2Cl2 and Tetramethylethylenediamine

Chemistry of materials, 2023-03, Vol.35 (5), p.2058-2068

2023

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Dry etching in the presence of physisorption of neutrals at lower temperatures

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2023-03, Vol.41 (2)

2023

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Thermal Atomic Layer Etching of CoO, ZnO, Fe 2 O 3 , and NiO by Chlorination and Ligand Addition Using SO 2 Cl 2 and Tetramethylethylenediamine

Chemistry of materials, 2023-03, Vol.35 (5), p.2058-2068

2023

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Progress report on high aspect ratio patterning for memory devices

Japanese Journal of Applied Physics, 2023-07, Vol.62 (SI), p.SI0801

2023

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Review on recent progress in patterning phase change materials

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2020-12, Vol.38 (6)

2020

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Plasma application in atomic layer etching

Thermal atomic layer etching: A review

Atomic Layer Processing: Semiconductor Dry Etching Technology

Overview of atomic layer etching in the semiconductor industry

Thermal etching of AlF3 and thermal atomic layer etching of Al2O3

Predicting synergy in atomic layer etching

Directional etch of magnetic and noble metals. II. Organic chemical vapor etch

Applying sputtering theory to directional atomic layer etching

Directional etch of magnetic and noble metals. I. Role of surface oxidation states

Neutral transport during etching of high aspect ratio features

Ion Beam Patterning of High-Density STT-RAM Devices

Reducing damage to Si substrates during gate etching processes by synchronous plasma pulsing

Highly Selective Directional Atomic Layer Etching of Silicon

SiCl4/Cl2 plasmas: A new chemistry to etch high-k materials selectively to Si-based materials

Spontaneous Etching of Metal Fluorides Using Ligand-Exchange Reactions: Landscape Revealed by Mass Spectrometry

Causes of anisotropy in thermal atomic layer etching of nanostructures

Volatile Products from Ligand Addition of P(CH 3 ) 3 to NiCl 2 , PdCl 2 , and PtCl 2 : Pathway for Metal Thermal Atomic Layer Etching

Surface reaction modelling of thermal atomic layer etching on blanket hafnium oxide and its application on high aspect ratio structures

Effectiveness of Different Ligands on Silane Precursors for Ligand Exchange to Etch Metal Fluorides

Control of etch profiles in high aspect ratio holes via precise reactant dosing in thermal atomic layer etching

Thermal Atomic Layer Etching of CoO, ZnO, Fe2O3, and NiO by Chlorination and Ligand Addition Using SO2Cl2 and Tetramethylethylenediamine

Dry etching in the presence of physisorption of neutrals at lower temperatures

Thermal Atomic Layer Etching of CoO, ZnO, Fe 2 O 3 , and NiO by Chlorination and Ligand Addition Using SO 2 Cl 2 and Tetramethylethylenediamine

Progress report on high aspect ratio patterning for memory devices

Review on recent progress in patterning phase change materials

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