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Scaling Theory for FinFETs Based on 3-D Effects Investigation

IEEE transactions on electron devices, 2007-05, Vol.54 (5), p.1140-1147

2007

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Analytical Electron-Mobility Model for Arbitrarily Stressed Silicon

IEEE transactions on electron devices, 2008-06, Vol.55 (6), p.1386-1390

2008

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Structure optimization of a uni-traveling-carrier photodiode with introduction of a hydro-dynamic model

Journal of semiconductors, 2010-10, Vol.31 (10), p.104005

2010

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Simulation of Layout-Dependent STI Stress and Its Impact on Circuit Performance

2009 International Conference on Simulation of Semiconductor Processes and Devices, 2009, p.1-4

2009

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Improving channel mobility in graphene-FETs by minimizing surface phonon scattering - A simulation study

2010 International Conference on Simulation of Semiconductor Processes and Devices, 2010, p.13-16

2010

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Effective density-of-states approach to QM correction in MOS structures

Solid-state electronics, 2000-03, Vol.44 (3), p.401-407

2000

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A unified charge model comprising both 2D quantum mechanical effects in channels and in poly-silicon gates of MOSFETs

Solid-state electronics, 2005-10, Vol.49 (10), p.1581-1588

2005

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Patterned buried oxide layers under a single MOSFET to improve the device performance

Semiconductor science and technology, 2004-03, Vol.19 (3), p.L25-L28

2004

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Monte carlo simulation of Cu-resistivity considering size-effects

2007 7th International Conference on ASIC, 2007, p.1146-1149

2007

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Analytical charge-control and I-V model for submicrometer and deep-submicrometer MOSFETs fully comprising quantum mechanical effects

IEEE transactions on computer-aided design of integrated circuits and systems, 2001-04, Vol.20 (4), p.495-502

2001

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Experimental results on drain and source on insulator MOSFETs fabricated by local SIMOX technology

Solid-state electronics, 2003-06, Vol.47 (6), p.1061-1067

2003

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Synthesis and Thermal Conductivity Measurement of High-Integrity Ultrathin Oxygen-Implanted Buried Oxide Layers

Japanese Journal of Applied Physics, 2004-04, Vol.43 (4S), p.2185

2004

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Unified MOSFET scaling theory using the variational method

International journal of electronics, 2002-11, Vol.89 (11), p.821-831

2002

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A 3D Charge Model for FinFETs with Ballistic Transport

2005 International Conference On Simulation of Semiconductor Processes and Devices, 2005, p.195-198

2005

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Fabrication of self-aligned drain and source on insulator MOSFET with dielectric pocket by local SIMOX technology

2005 IEEE International SOI Conference Proceedings, 2005, p.99-100

2005

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Simulation of source-to-drain (S/D) tunnelling in sub-10nm DG MOSFETs with WKB method

ASIC, 2003. Proceedings. 5th International Conference on, 2003, Vol.2, p.1361-1364 Vol.2

2003

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A compact model of channel electron mobility for nano scale strained-Si nMOSFET

2008 2nd IEEE International Nanoelectronics Conference, 2008, p.504-508

2008

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Engineering of S/D Lateral Diffusion for DG-FETs Based on Full Quantum Analysis

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings, 2006, p.1364-1366

2006

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Thermal conductivity measurements of ultra-thin single crystal silicon films using improved structure

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings, 2006, p.2196-2198

2006

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Measurement of thermal conductivity of buried oxides of silicon-on-insulator wafers fabricated by separation by implantation of oxygen technology

Applied physics letters, 2002-09, Vol.81 (10), p.1896-1898

2002

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Analysis of GIDL Dependence on STI-induced Mechanical Stress

2005 IEEE Conference on Electron Devices and Solid-State Circuits, 2005, p.769-772

2005

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Modified Airy function method for modeling of direct tunneling current in metal–oxide–semiconductor structures

Applied physics letters, 2001-09, Vol.79 (12), p.1831-1833

2001

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Broyden method for the self-consistent solution of Schrodinger and Poisson equations

2005 6th International Conference on ASIC, 2005, Vol.2, p.991-994

2005

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A modified DSOI (Drain/Source On Insulator) device structure with better electrical performance

2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595), 2002, Vol.2, p.487-490 vol.2

2002

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Modeling on direct tunneling current in ultra-thin oxide NMOSFET considering quantum mechanics

2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595), 2002, Vol.2, p.483-486 vol.2

2002

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Scaling Theory for FinFETs Based on 3-D Effects Investigation

Analytical Electron-Mobility Model for Arbitrarily Stressed Silicon

Structure optimization of a uni-traveling-carrier photodiode with introduction of a hydro-dynamic model

Simulation of Layout-Dependent STI Stress and Its Impact on Circuit Performance

Improving channel mobility in graphene-FETs by minimizing surface phonon scattering - A simulation study

Effective density-of-states approach to QM correction in MOS structures

A unified charge model comprising both 2D quantum mechanical effects in channels and in poly-silicon gates of MOSFETs

Patterned buried oxide layers under a single MOSFET to improve the device performance

Monte carlo simulation of Cu-resistivity considering size-effects

Analytical charge-control and I-V model for submicrometer and deep-submicrometer MOSFETs fully comprising quantum mechanical effects

Experimental results on drain and source on insulator MOSFETs fabricated by local SIMOX technology

Synthesis and Thermal Conductivity Measurement of High-Integrity Ultrathin Oxygen-Implanted Buried Oxide Layers

Unified MOSFET scaling theory using the variational method

A 3D Charge Model for FinFETs with Ballistic Transport

Fabrication of self-aligned drain and source on insulator MOSFET with dielectric pocket by local SIMOX technology

Simulation of source-to-drain (S/D) tunnelling in sub-10nm DG MOSFETs with WKB method

A compact model of channel electron mobility for nano scale strained-Si nMOSFET

Engineering of S/D Lateral Diffusion for DG-FETs Based on Full Quantum Analysis

Thermal conductivity measurements of ultra-thin single crystal silicon films using improved structure

Measurement of thermal conductivity of buried oxides of silicon-on-insulator wafers fabricated by separation by implantation of oxygen technology

Analysis of GIDL Dependence on STI-induced Mechanical Stress

Modified Airy function method for modeling of direct tunneling current in metal–oxide–semiconductor structures

Broyden method for the self-consistent solution of Schrodinger and Poisson equations

A modified DSOI (Drain/Source On Insulator) device structure with better electrical performance

Modeling on direct tunneling current in ultra-thin oxide NMOSFET considering quantum mechanics

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