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Room‐Temperature Ferroelectricity in Hexagonally Layered α‐In2Se3 Nanoflakes down to the Monolayer Limit

Advanced functional materials, 2018-12, Vol.28 (50), p.n/a

2018

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Oxidation-boosted charge trapping in ultra-sensitive van der Waals materials for artificial synaptic features

Nature communications, 2020-06, Vol.11 (1), p.2972-2972, Article 2972

2020

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High Mobilities in Layered InSe Transistors with Indium‐Encapsulation‐Induced Surface Charge Doping

Advanced materials (Weinheim), 2018-11, Vol.30 (44), p.e1803690-n/a

2018

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Reversible and Precisely Controllable p/n‐Type Doping of MoTe2 Transistors through Electrothermal Doping

Advanced materials (Weinheim), 2018-03, Vol.30 (13), p.e1706995-n/a

2018

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Analog Circuit Applications Based on All‐2D Ambipolar ReSe2 Field‐Effect Transistors

Advanced functional materials, 2019-05, Vol.29 (22), p.n/a

2019

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Defect Engineering in Ambipolar Layered Materials for Mode‐Regulable Nociceptor

Advanced functional materials, 2021-01, Vol.31 (5), p.n/a

2021

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Low‐Voltage Operational, Low‐Power Consuming, and High Sensitive Tactile Switch Based on 2D Layered InSe Tribotronics

Advanced functional materials, 2019-05, Vol.29 (19), p.n/a

2019

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Mimic Drug Dosage Modulation for Neuroplasticity Based on Charge‐Trap Layered Electronics

Advanced functional materials, 2021-01, Vol.31 (5), p.n/a

2021

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High-Mobility InSe Transistors: The Nature of Charge Transport

ACS applied materials & interfaces, 2019-10, Vol.11 (39), p.35969-35976

2019

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A New Low-Voltage Triggering SCR for the Protection of a Double RESURF HV-LDMOS

IEEE electron device letters, 2016-09, Vol.37 (9), p.1201-1203

2016

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Atomically thin van der Waals tunnel field-effect transistors and its potential for applications

Nanotechnology, 2019-03, Vol.30 (10), p.105201-105201

2019

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Stably Saturated Output Current Characteristics and Hot-Carrier Reliability of a-InGaZnO Thin-Film Transistors With Source-Connected Field Plate

IEEE transactions on electron devices, 2023-09, Vol.70 (9), p.1-5

2023

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Asymmetric Electrode Structure Induces Dual-Channel Phenomenon under Hot-Carrier Stress in Organic Thin-Film Transistors

IEEE electron device letters, 2023-09, Vol.44 (9), p.1-1

2023

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Abnormal Two-Stage Degradation Under Hot Carrier Injection With Lateral Double-Diffused MOS With 0.13- \mu m Bipolar-CMOS-DMOS Technology

IEEE transactions on electron devices, 2023-07, Vol.70 (7), p.1-5

2023

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Multifunctional full-visible-spectrum optoelectronics based on a van der Waals heterostructure

Nano energy, 2019-12, Vol.66, p.104107, Article 104107

2019

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Improving a-InGaZnO TFTs Reliability by Optimizing Electrode Capping Structure Under Negative Bias Illumination Stress

IEEE electron device letters, 2020-08, Vol.41 (8), p.1221-1224

2020

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A High-Speed 7.2-ns Read-Write Random Access 4-Mb Embedded Resistive RAM (ReRAM) Macro Using Process-Variation-Tolerant Current-Mode Read Schemes

IEEE journal of solid-state circuits, 2013-03, Vol.48 (3), p.878-891

2013

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Reversible Charge‐Polarity Control for Multioperation‐Mode Transistors Based on van der Waals Heterostructures

Advanced science, 2022-08, Vol.9 (24), p.e2106016-n/a

2022

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The Effect of Humidity on Reducing Forming Voltage in Conductive-Bridge Random Access Memory With an Alloy Electrode

IEEE electron device letters, 2019-10, Vol.40 (10), p.1606-1609

2019

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Abnormal Relationship Between Hot Carrier Stress Degradation and Body Current in High-k Metal Gate in the 14-nm Node

IEEE electron device letters, 2019-04, Vol.40 (4), p.498-501

2019

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Carrier-capture-assisted optoelectronics based on van der Waals materials to imitate medicine-acting metaplasticity

NPJ 2D materials and applications, 2021-06, Vol.5 (1), p.1-9, Article 60

2021

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Analysis of Critical Schottky Distance Effect and Distributed Set Voltage in HfO2-based 1T-1R Device

2023 35th International Conference on Microelectronic Test Structure (ICMTS), 2023, p.1-4

2023

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Improving Performance of FBARs by Advanced Low-Temperature High-Pressure Technology

2023 35th International Conference on Microelectronic Test Structure (ICMTS), 2023, p.1-4

2023

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Multilayer Graphene–WSe2 Heterostructures for WSe2 Transistors

ACS nano, 2017-12, Vol.11 (12), p.12817-12823

2017

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Abnormal Recovery Phenomenon Induced by Hole Injection During Hot Carrier Degradation in SOI n-MOSFETs

IEEE electron device letters, 2017-07, Vol.38 (7), p.835-838

2017

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Room‐Temperature Ferroelectricity in Hexagonally Layered α‐In2Se3 Nanoflakes down to the Monolayer Limit

Oxidation-boosted charge trapping in ultra-sensitive van der Waals materials for artificial synaptic features

High Mobilities in Layered InSe Transistors with Indium‐Encapsulation‐Induced Surface Charge Doping

Reversible and Precisely Controllable p/n‐Type Doping of MoTe2 Transistors through Electrothermal Doping

Analog Circuit Applications Based on All‐2D Ambipolar ReSe2 Field‐Effect Transistors

Defect Engineering in Ambipolar Layered Materials for Mode‐Regulable Nociceptor

Low‐Voltage Operational, Low‐Power Consuming, and High Sensitive Tactile Switch Based on 2D Layered InSe Tribotronics

Mimic Drug Dosage Modulation for Neuroplasticity Based on Charge‐Trap Layered Electronics

High-Mobility InSe Transistors: The Nature of Charge Transport

A New Low-Voltage Triggering SCR for the Protection of a Double RESURF HV-LDMOS

Atomically thin van der Waals tunnel field-effect transistors and its potential for applications

Stably Saturated Output Current Characteristics and Hot-Carrier Reliability of a-InGaZnO Thin-Film Transistors With Source-Connected Field Plate

Asymmetric Electrode Structure Induces Dual-Channel Phenomenon under Hot-Carrier Stress in Organic Thin-Film Transistors

Abnormal Two-Stage Degradation Under Hot Carrier Injection With Lateral Double-Diffused MOS With 0.13- \mu m Bipolar-CMOS-DMOS Technology

Multifunctional full-visible-spectrum optoelectronics based on a van der Waals heterostructure

Improving a-InGaZnO TFTs Reliability by Optimizing Electrode Capping Structure Under Negative Bias Illumination Stress

A High-Speed 7.2-ns Read-Write Random Access 4-Mb Embedded Resistive RAM (ReRAM) Macro Using Process-Variation-Tolerant Current-Mode Read Schemes

Reversible Charge‐Polarity Control for Multioperation‐Mode Transistors Based on van der Waals Heterostructures

The Effect of Humidity on Reducing Forming Voltage in Conductive-Bridge Random Access Memory With an Alloy Electrode

Abnormal Relationship Between Hot Carrier Stress Degradation and Body Current in High-k Metal Gate in the 14-nm Node

Carrier-capture-assisted optoelectronics based on van der Waals materials to imitate medicine-acting metaplasticity

Analysis of Critical Schottky Distance Effect and Distributed Set Voltage in HfO2-based 1T-1R Device

Improving Performance of FBARs by Advanced Low-Temperature High-Pressure Technology

Multilayer Graphene–WSe2 Heterostructures for WSe2 Transistors

Abnormal Recovery Phenomenon Induced by Hole Injection During Hot Carrier Degradation in SOI n-MOSFETs

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