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Deformation mechanisms of Al films on oxidized Si wafers

Journal of materials research, 1994-05, Vol.9 (5), p.1147-1155

1994

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Dislocation formation in silicon implanted at different temperatures

Materials science & engineering. B, Solid-state materials for advanced technology, 1992-11, Vol.15 (2), p.173-186

1992

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The role of extended defects on transient boron diffusion in ion-implanted silicon

Materials science & engineering. B, Solid-state materials for advanced technology, 1992-02, Vol.12 (4), p.307-325

1992

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Gettering of Cu at Buried Damage Layers Made by Si Self Implantation

MRS proceedings, 1989, Vol.157, Article 641

1989

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Experiences with product data interchange: On product models, integration, and standardisation

Computers in industry, 1996-11, Vol.31 (3), p.205-221

1996

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Time evolution of dislocation formation in ion implanted silicon

Materials science & engineering. B, Solid-state materials for advanced technology, 1994-06, Vol.25 (1), p.60-67

1994

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Optimization of ion implantation damage annealing by means of high-resolution X-ray diffraction

Thin solid films, 1993-11, Vol.235 (1), p.189-197

1993

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Range straggling of MeV ions in amorphous silicon: Discrepancies with TRIM

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1990-03, Vol.48 (1-4), p.448-452

1990

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3D-resolved determination of minority-carrier lifetime in planar silicon solar cells by photocurrent decay

Journal of applied physics, 1990-12, Vol.68 (12), p.6485-6494

1990

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Pre-amorphization damage in Si(100) implanted with high mass MeV ions

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1992-01, Vol.62 (3), p.372-376

1992

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Reduction of secondary defect formation in MeV B sup + ion-implanted Si (100)

Applied physics letters, 1989-10, Vol.55:18

1989

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Improvement of device characteristics by multiple step implants or introducing a C gettering layer

ESSDERC '92: 22nd European Solid State Device Research conference, 1992, Vol.19 (1), p.543-546

1992

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Addendum to “range straggling of MeV ions in amorphous silicon; discrepancies with TRIM”

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1990, Vol.47 (3), p.329-331

1990

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Reduction of secondary defect formation in MeV As ion implanted Si(100)

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1991-07, Vol.59, p.614-618

1991

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Pre-amorphization damage in ion-implanted silicon

Materials science reports, 1991-08, Vol.6 (7), p.275-366

1991

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Deformation mechanisms of Al films on oxidized Si wafers

Dislocation formation in silicon implanted at different temperatures

The role of extended defects on transient boron diffusion in ion-implanted silicon

Gettering of Cu at Buried Damage Layers Made by Si Self Implantation

Experiences with product data interchange: On product models, integration, and standardisation

Time evolution of dislocation formation in ion implanted silicon

Optimization of ion implantation damage annealing by means of high-resolution X-ray diffraction

Range straggling of MeV ions in amorphous silicon: Discrepancies with TRIM

3D-resolved determination of minority-carrier lifetime in planar silicon solar cells by photocurrent decay

Pre-amorphization damage in Si(100) implanted with high mass MeV ions

Reduction of secondary defect formation in MeV B sup + ion-implanted Si (100)

Improvement of device characteristics by multiple step implants or introducing a C gettering layer

Addendum to “range straggling of MeV ions in amorphous silicon; discrepancies with TRIM”

Reduction of secondary defect formation in MeV As ion implanted Si(100)

Pre-amorphization damage in ion-implanted silicon

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