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HERMES-Core-A 1.59-TOPS/mm2 PCM on 14-nm CMOS In-Memory Compute Core Using 300-ps/LSB Linearized CCO-Based ADCs

IEEE journal of solid-state circuits, 2022-04, Vol.57 (4), p.1027-1038

2022

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Water-Based Route to Ligand-Selective Synthesis of ZnSe and Cd-Doped ZnSe Quantum Dots with Tunable Ultraviolet A to Blue Photoluminescence

Langmuir, 2009-01, Vol.25 (1), p.434-442

2009

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Interfacial chemistry of hydrofluoric acid-treated In0.53Ga0.47As(100) during atomic layer deposition of aluminum oxide

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2013-01, Vol.31 (1)

2013

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SiGe FinFET for practical logic libraries by mitigating local layout effect

2017 Symposium on VLSI Technology, 2017, p.T122-T123

2017

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Effect of Deep-Level Defects on Surface Recombination Velocity at the Interface Between Silicon and Dielectric Films

IEEE transactions on electron devices, 2010-04, Vol.57 (4), p.877-889

2010

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Integrated dual SPE processes with low contact resistivity for future CMOS technologies

2017 IEEE International Electron Devices Meeting (IEDM), 2017, p.22.3.1-22.3.4

2017

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HERMES-Core—A 1.59-TOPS/mm 2 PCM on 14-nm CMOS In-Memory Compute Core Using 300-ps/LSB Linearized CCO-Based ADCs

IEEE journal of solid-state circuits, 2022-04, Vol.57 (4), p.1027-1038

2022

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Controlled Oxide Removal and Surface Morphology on InSb(100) Using Gas Phase HF/H2O

Journal of physical chemistry. C, 2011-04, Vol.115 (15), p.7440-7449

2011

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Next Generation Infrared (IR) Laser Debonding / Silicon Handle Technology for Precision Chiplet Technology Applications

2023 IEEE 73rd Electronic Components and Technology Conference (ECTC), 2023, p.1175-1180

2023

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External Resistance Reduction by Nanosecond Laser Anneal in Si/SiGe CMOS Technology

2018 IEEE International Electron Devices Meeting (IEDM), 2018, p.35.3.1-35.3.4

2018

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Controlled Oxide Removal and Surface Morphology on InSb(100) Using Gas Phase HF/H 2 O

Journal of physical chemistry. C, 2011-04, Vol.115 (15), p.7440-7449

2011

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Oxide Removal and Selective Etching of In from InSb(100) with TiCl 4

Journal of physical chemistry. C, 2011-10, Vol.115 (40), p.19733-19740

2011

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CMP Defect Reduction and Mitigation: Practices and Future Trends

2021 32nd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC), 2021, p.1-6

2021

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Oxide Removal and Selective Etching of In from InSb(100) with TiCl4

Journal of physical chemistry. C, 2011-10, Vol.115 (40), p.19733-19740

2011

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A Systematic Study on BEOL Defectivity Control for Future AI Application

2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC), 2020, p.1-4

2020

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Surface chemistry of Al(CH3)3 and TiCl4 on GaAs(100) and InGaAs during the first half-cycle of atomic layer deposition

Microscopy and microanalysis, 2012-07, Vol.18 (S2), p.906-907

2012

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Technology viable DC performance elements for Si/SiGe channel CMOS FinFTT

2016 IEEE International Electron Devices Meeting (IEDM), 2016, p.17.4.1-17.4.4

2016

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The Impact of AI on Contact Resistance and Its Suitability in Fine Pitch Interconnects

IMAPSource Proceedings, 2024-02, Vol.2023 (Symposium)

2024

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Interface Formation Between High Dielectric Permittivity Films and III-V Compound Semiconductors using HF Chemistries and Atomic Layer Deposition

Lie, Fee Li

2011

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Directed self-assembly patterning for forming fin field effect transistors

SPIE newsroom, 2016-07

2016

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HERMES-Core-A 1.59-TOPS/mm2 PCM on 14-nm CMOS In-Memory Compute Core Using 300-ps/LSB Linearized CCO-Based ADCs

Water-Based Route to Ligand-Selective Synthesis of ZnSe and Cd-Doped ZnSe Quantum Dots with Tunable Ultraviolet A to Blue Photoluminescence

Interfacial chemistry of hydrofluoric acid-treated In0.53Ga0.47As(100) during atomic layer deposition of aluminum oxide

SiGe FinFET for practical logic libraries by mitigating local layout effect

Effect of Deep-Level Defects on Surface Recombination Velocity at the Interface Between Silicon and Dielectric Films

Integrated dual SPE processes with low contact resistivity for future CMOS technologies

HERMES-Core—A 1.59-TOPS/mm 2 PCM on 14-nm CMOS In-Memory Compute Core Using 300-ps/LSB Linearized CCO-Based ADCs

Controlled Oxide Removal and Surface Morphology on InSb(100) Using Gas Phase HF/H2O

Next Generation Infrared (IR) Laser Debonding / Silicon Handle Technology for Precision Chiplet Technology Applications

External Resistance Reduction by Nanosecond Laser Anneal in Si/SiGe CMOS Technology

Controlled Oxide Removal and Surface Morphology on InSb(100) Using Gas Phase HF/H 2 O

Oxide Removal and Selective Etching of In from InSb(100) with TiCl 4

CMP Defect Reduction and Mitigation: Practices and Future Trends

Oxide Removal and Selective Etching of In from InSb(100) with TiCl4

A Systematic Study on BEOL Defectivity Control for Future AI Application

Surface chemistry of Al(CH3)3 and TiCl4 on GaAs(100) and InGaAs during the first half-cycle of atomic layer deposition

Technology viable DC performance elements for Si/SiGe channel CMOS FinFTT

The Impact of AI on Contact Resistance and Its Suitability in Fine Pitch Interconnects

Interface Formation Between High Dielectric Permittivity Films and III-V Compound Semiconductors using HF Chemistries and Atomic Layer Deposition

Directed self-assembly patterning for forming fin field effect transistors

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