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High mobility 4H-SiC (0001) transistors using alkali and alkaline earth interface layers

Applied physics letters, 2014-11, Vol.105 (18)

2014

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Structure and chemistry of passivated SiC/SiO2 interfaces

Applied physics letters, 2016-05, Vol.108 (20)

2016

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Performance and Reliability Impacts of Extended Epitaxial Defects on 4H-SiC Power Devices

Materials science forum, 2018-06, Vol.924, p.137-142

2018

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Flexible thin film temperature and strain sensor array utilizing a novel sensing concept

Sensors and actuators. A. Physical., 2007-04, Vol.135 (2), p.593-597

2007

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Study of Dopant Activation and Ionization for Phosphorus in 4H-SiC

Journal of electronic materials, 2024-06, Vol.53 (6), p.2806-2810

2024

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Impact of carrier lifetime enhancement using high temperature oxidation on 15 kV 4H-SiC P-GTO thyristor

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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Improvements to the Analytical Model to Describe UIS Events

IEEE transactions on electron devices, 2022-07, Vol.69 (7), p.3848-3853

2022

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Energy-band alignment of Al2O3 and HfAlO gate dielectrics deposited by atomic layer deposition on 4H–SiC

Applied physics letters, 2010-01, Vol.96 (4)

2010

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Interfacial self cleaning during atomic layer deposition and annealing of HfO2 films on native (100)-GaAs substrates

Applied physics letters, 2010-03, Vol.96 (11)

2010

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Investigation of Nitrided Atomic-Layer-Deposited Oxides in 4H-SiC Capacitors and MOSFETs

Materials science forum, 2013-01, Vol.740-742, p.707-710

2013

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650V Vertical SiC MOSFETs and Diodes with Improved Terrestrial-Neutron Single-Event Burnout

Key engineering materials, 2023-06, Vol.948, p.95-99

2023

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Hole-Induced Threshold Voltage Instability Under High Positive and Negative Gate Stress in SiC MOSFETs

2024 IEEE International Reliability Physics Symposium (IRPS), 2024, p.1-5

2024

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Measurement of the D Changes Under BTI-Stress in 4H-SiC FETs Using the Subthreshold Slope Method

2024 IEEE International Reliability Physics Symposium (IRPS), 2024, p.P58.SiC-1-P58.SiC-4

2024

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High-Mobility SiC MOSFETs with Alkaline Earth Interface Passivation

Materials Science Forum, 2016-05, Vol.858, p.671-676

2016

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Comparison of Au and Au-Ni Alloys as Contact Materials for MEMS Switches

Journal of microelectromechanical systems, 2009-04, Vol.18 (2), p.287-295

2009

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Gate Oxide Reliability of SiC MOSFETs and Capacitors Fabricated on 150mm Wafers

Materials science forum, 2019-07, Vol.963, p.745-748

2019

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15 kV n-GTOs in 4H-SiC

Materials science forum, 2019-07, Vol.963, p.651-654

2019

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Reliability of SiC Power Devices against Cosmic Ray Neutron Single-Event Burnout

Materials science forum, 2018-06, Vol.924, p.559-562

2018

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High-Mobility SiC MOSFETs with Chemically Modified Interfaces

Materials science forum, 2015-06, Vol.821-823, p.749-752

2015

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Accelerated Testing of SiC Power Devices under High-Field Operating Conditions

Materials science forum, 2020-07, Vol.1004, p.992-997, Article 992

2020

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New Insight into Single-Event Radiation Failure Mechanisms in Silicon Carbide Power Schottky Diodes and MOSFETs

Materials science forum, 2020-07, Vol.1004, p.1066-1073, Article 1066

2020

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Electrical properties and interface structure of SiC MOSFETs with barium interface passivation

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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High-mobility enhancement-mode 4H-SiC lateral field-effect transistors utilizing atomic layer deposited Al2O3 gate dielectric

Applied physics letters, 2009-10, Vol.95 (15)

2009

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Negative Gate Bias TDDB evaluation of n-Channel SiC Vertical Power MOSFETs

2022 IEEE International Reliability Physics Symposium (IRPS), 2022, p.8B.1-1-8B.1-6

2022

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High Temperature and High Humidity Reliability Evaluation of Large-Area 1200V and 1700V SiC Diodes

2023 IEEE International Reliability Physics Symposium (IRPS), 2023, p.1-4

2023

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High mobility 4H-SiC (0001) transistors using alkali and alkaline earth interface layers

Structure and chemistry of passivated SiC/SiO2 interfaces

Performance and Reliability Impacts of Extended Epitaxial Defects on 4H-SiC Power Devices

Flexible thin film temperature and strain sensor array utilizing a novel sensing concept

Study of Dopant Activation and Ionization for Phosphorus in 4H-SiC

Impact of carrier lifetime enhancement using high temperature oxidation on 15 kV 4H-SiC P-GTO thyristor

Improvements to the Analytical Model to Describe UIS Events

Energy-band alignment of Al2O3 and HfAlO gate dielectrics deposited by atomic layer deposition on 4H–SiC

Interfacial self cleaning during atomic layer deposition and annealing of HfO2 films on native (100)-GaAs substrates

Investigation of Nitrided Atomic-Layer-Deposited Oxides in 4H-SiC Capacitors and MOSFETs

650V Vertical SiC MOSFETs and Diodes with Improved Terrestrial-Neutron Single-Event Burnout

Hole-Induced Threshold Voltage Instability Under High Positive and Negative Gate Stress in SiC MOSFETs

Measurement of the D Changes Under BTI-Stress in 4H-SiC FETs Using the Subthreshold Slope Method

High-Mobility SiC MOSFETs with Alkaline Earth Interface Passivation

Comparison of Au and Au-Ni Alloys as Contact Materials for MEMS Switches

Gate Oxide Reliability of SiC MOSFETs and Capacitors Fabricated on 150mm Wafers

15 kV n-GTOs in 4H-SiC

Reliability of SiC Power Devices against Cosmic Ray Neutron Single-Event Burnout

High-Mobility SiC MOSFETs with Chemically Modified Interfaces

Accelerated Testing of SiC Power Devices under High-Field Operating Conditions

New Insight into Single-Event Radiation Failure Mechanisms in Silicon Carbide Power Schottky Diodes and MOSFETs

Electrical properties and interface structure of SiC MOSFETs with barium interface passivation

High-mobility enhancement-mode 4H-SiC lateral field-effect transistors utilizing atomic layer deposited Al2O3 gate dielectric

Negative Gate Bias TDDB evaluation of n-Channel SiC Vertical Power MOSFETs

High Temperature and High Humidity Reliability Evaluation of Large-Area 1200V and 1700V SiC Diodes

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