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Effect of different constant compliance current for hopping conduction distance properties of the Sn:SiOx thin film RRAM devices

Applied physics. A, Materials science & processing, 2016-03, Vol.122 (3), Article 228

2016

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Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical CO2 Fluid Treatment

IEEE electron device letters, 2012-12, Vol.33 (12), p.1693-1695

2012

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Hopping conduction properties of the Sn:SiO X thin-film resistance random access memory devices induced by rapid temperature annealing procedure

Applied physics. A, Materials science & processing, 2015-06, Vol.119 (4), p.1609-1613

2015

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Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment

The Journal of supercritical fluids, 2014-01, Vol.85, p.183-189

2014

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Retraction notice to “Improvement Mechanism of resistance random access memory with supercritical CO2 fluid treatment” [J. Supercrit. Fluids, Volume 85, January 2014, Pages 183–189]

The Journal of supercritical fluids, 2021-12, Vol.178, p.105350, Article 105350

2021

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Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO2 fluid treatment

Applied physics letters, 2012-09, Vol.101 (11)

2012

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Effect of different constant compliance current for hopping conduction distance properties of the Sn:SiO sub(x) thin film RRAM devices

Applied physics. A, Materials science & processing, 2016-03, Vol.122 (3), p.1-6

2016

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Hopping conduction properties of the Sn:SiO sub( X )thin-film resistance random access memory devices induced by rapid temperature annealing procedure

Applied physics. A, Materials science & processing, 2015-06, Vol.119 (4), p.1609-1613

2015

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Hopping conduction properties of the Sn:SiOX thin-film resistance random access memory devices induced by rapid temperature annealing procedure

Applied physics. A, Materials science & processing, 2015, Vol.119 (4), p.1609-1613

2015

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RETRACTED: Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment

The Journal of supercritical fluids, 2014-01, Vol.85, p.183-189

2014

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Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical \hbox Fluid Treatment

IEEE electron device letters, 2012-12, Vol.33 (12), p.1693-1695

2012

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Publisher's Note: The Effect of Silicon Oxide Based RRAM with Tin Doping [Electrochem. Solid-State Lett., 15, H65 (2012)]

ECS solid state letters, 2012-07, Vol.1 (2), p.X1-X1

2012

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Phyllanthus urinaria induces mitochondrial dysfunction in human osteosarcoma 143B cells associated with modulation of mitochondrial fission/fusion proteins

Mitochondrion, 2014-07, Vol.17, p.22-33

2014

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Quality of Sleep and Related Factors During Chemotherapy in Patients with Stage I/II Breast Cancer

Journal of the Formosan Medical Association, 2006, Vol.105 (1), p.64-69

2006

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An exploration of Papanicolaou smear history and behavior of patients with newly diagnosed cervical cancer in Taiwan

Cancer nursing, 2010-09, Vol.33 (5), p.362-368

2010

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Processing of DNase Domain during Translocation of Colicin E7 across the Membrane of Escherichia coli

Biochemical and biophysical research communications, 2001-06, Vol.284 (3), p.556-562

2001

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Quality of Sleep and Related Factors during Chemotherapy in Patients with Stage Ⅰ/Ⅱ Breast Cancer

Journal of the Formosan Medical Association, 2006-01, Vol.105 (1), p.64

2006

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Effect of different constant compliance current for hopping conduction distance properties of the Sn:SiOx thin film RRAM devices

Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical CO2 Fluid Treatment

Hopping conduction properties of the Sn:SiO X thin-film resistance random access memory devices induced by rapid temperature annealing procedure

Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment

Retraction notice to “Improvement Mechanism of resistance random access memory with supercritical CO2 fluid treatment” [J. Supercrit. Fluids, Volume 85, January 2014, Pages 183–189]

Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO2 fluid treatment

Effect of different constant compliance current for hopping conduction distance properties of the Sn:SiO sub(x) thin film RRAM devices

Hopping conduction properties of the Sn:SiO sub( X )thin-film resistance random access memory devices induced by rapid temperature annealing procedure

Hopping conduction properties of the Sn:SiOX thin-film resistance random access memory devices induced by rapid temperature annealing procedure

RETRACTED: Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment

Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical \hbox Fluid Treatment

Publisher's Note: The Effect of Silicon Oxide Based RRAM with Tin Doping [Electrochem. Solid-State Lett., 15, H65 (2012)]

Phyllanthus urinaria induces mitochondrial dysfunction in human osteosarcoma 143B cells associated with modulation of mitochondrial fission/fusion proteins

Quality of Sleep and Related Factors During Chemotherapy in Patients with Stage I/II Breast Cancer

An exploration of Papanicolaou smear history and behavior of patients with newly diagnosed cervical cancer in Taiwan

Processing of DNase Domain during Translocation of Colicin E7 across the Membrane of Escherichia coli

Quality of Sleep and Related Factors during Chemotherapy in Patients with Stage Ⅰ/Ⅱ Breast Cancer

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