UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 62

Sortiert nach

Room‐Temperature Ferroelectricity in Hexagonally Layered α‐In2Se3 Nanoflakes down to the Monolayer Limit

Advanced functional materials, 2018-12, Vol.28 (50), p.n/a

2018

Volltextzugriff (PDF)

Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface

Science (American Association for the Advancement of Science), 2015-07, Vol.349 (6247), p.524-528

2015

Volltextzugriff (PDF)

Evidence of indirect gap in monolayer WSe2

Nature communications, 2017-10, Vol.8 (1), p.1-7, Article 929

2017

Volltextzugriff (PDF)

Negative circular polarization emissions from WSe2/MoSe2 commensurate heterobilayers

Nature communications, 2018-04, Vol.9 (1), p.1-7, Article 1356

2018

Volltextzugriff (PDF)

Layer-Dependent and In-Plane Anisotropic Properties of Low-Temperature Synthesized Few-Layer PdSe2 Single Crystals

ACS nano, 2020-04, Vol.14 (4), p.4963-4972

2020

Volltextzugriff (PDF)

In Situ Atomic‐Scale Observation of Monolayer MoS2 Devices under High‐Voltage Biasing via Transmission Electron Microscopy

Small (Weinheim an der Bergstrasse, Germany), 2022-02, Vol.18 (7), p.e2106411-n/a

2022

Volltextzugriff (PDF)

Ultrafast laser ablation, intrinsic threshold, and nanopatterning of monolayer molybdenum disulfide

Scientific reports, 2022-04, Vol.12 (1), p.6910-6910, Article 6910

2022

Volltextzugriff (PDF)

Tailoring excitonic states of van der Waals bilayers through stacking configuration, band alignment, and valley spin

Science advances, 2019-12, Vol.5 (12), p.eaax7407-eaax7407

2019

Volltextzugriff (PDF)

Boost Lasing Performances of 2D Semiconductor in a Hybrid Tungsten Diselenide Monolayer/Cadmium Selenide Quantum Dots Microcavity Laser

Advanced optical materials, 2022-10, Vol.10 (20), p.n/a

2022

Volltextzugriff (PDF)

Air-Stable, Large-Area 2D Metals and Semiconductors

ACS Nanoscience Au, 2024-04, Vol.4 (2), p.115-127

2024

Volltextzugriff (PDF)

Remote growth of oxide heteroepitaxy through MoS2

APL materials, 2021-05, Vol.9 (5), p.051115-051115-6

2021

Volltextzugriff (PDF)

Ultrafast Exciton Trapping and Exciton–Exciton Annihilation in Large-Area CVD-Grown Monolayer WS2

Journal of physical chemistry. C, 2021-11, Vol.125 (43), p.23880-23888

2021

Volltextzugriff (PDF)

Time-resolved ARPES Determination of a Quasi-Particle Band Gap and Hot Electron Dynamics in Monolayer MoS2

Nano letters, 2021-09, Vol.21 (17), p.7363-7370

2021

Volltextzugriff (PDF)

Ultrafast multi-shot ablation and defect generation in monolayer transition metal dichalcogenides

AIP advances, 2022-01, Vol.12 (1), p.015217-015217-6

2022

Volltextzugriff (PDF)

Efficient Multiple Exciton Generation in Monolayer MoS2

The journal of physical chemistry letters, 2023-03, Vol.14 (12), p.2965-2972

2023

Volltextzugriff (PDF)

Photoluminescence Enhancement and Structure Repairing of Monolayer MoSe2 by Hydrohalic Acid Treatment

ACS nano, 2016-01, Vol.10 (1), p.1454-1461

2016

Volltextzugriff (PDF)

Room‐Temperature Ferromagnetism of Single‐Layer MoS2 Induced by Antiferromagnetic Proximity of Yttrium Iron Garnet

Advanced quantum technologies (Online), 2021-02, Vol.4 (2), p.n/a

2021

Volltextzugriff (PDF)

One-dimensional bandgap modulation at continuous few-layer MoS2 steps

Applied physics letters, 2022-12, Vol.121 (23)

2022

Volltextzugriff (PDF)

Remarkably Deep Moiré Potential for Intralayer Excitons in MoSe2/MoS2 Twisted Heterobilayers

Nano letters, 2023-02, Vol.23 (4), p.1306-1312

2023

Volltextzugriff (PDF)

Moiré potential impedes interlayer exciton diffusion in van der Waals heterostructures

Science advances, 2020-09, Vol.6 (39)

2020

Volltextzugriff (PDF)

Dielectric impact on exciton binding energy and quasiparticle bandgap in monolayer WS2 and WSe2

2d materials, 2019-03, Vol.6 (2)

2019

Volltextzugriff (PDF)

In Situ Atomic-Scale Observation of Monolayer MoS 2 Devices under High-Voltage Biasing via Transmission Electron Microscopy

Small (Weinheim an der Bergstrasse, Germany), 2022-02, Vol.18 (7), p.e2106411

2022

Volltextzugriff (PDF)

Low temperature deposition of high quality single crystalline AlN thin films on sapphire using highly oriented monolayer MoS2 as a buffer layer

Journal of crystal growth, 2020-08, Vol.544, p.125726, Article 125726

2020

Volltextzugriff (PDF)

Atomic scale depletion region at one dimensional MoSe2-WSe2 heterointerface

Applied physics letters, 2018-12, Vol.113 (24)

2018

Volltextzugriff (PDF)

Monolayer MoS2 Enabled Single-Crystalline Growth of AlN on Si(100) Using Low-Temperature Helicon Sputtering

ACS applied nano materials, 2019-04, Vol.2 (4), p.1964-1969

2019

Volltextzugriff (PDF)

1 – 25 von 62

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(52)
Mit Volltextzugriff
(54)

Publikationsform

Artikel
(53)
Tagungsberichte
(9)

Sprache

Englisch
(62)
Japanisch
(4)

Erscheinungsjahr

n.n

Thema

Science & Technology
(30)
Science & Technology - Other Topics
(22)
Physical Sciences
(19)
Technology
(19)
Materials Science
(18)
Materials Science, Multidisciplinary
(16)
Nanoscience & Nanotechnology
(15)
Physics
(14)
Physics, Applied
(11)
Chemistry
(9)
Chemistry, Physical
(9)
Monolayers
(7)
Chemistry, Multidisciplinary
(6)
Molybdenum Disulfide
(6)
Multidisciplinary Sciences
(6)
Optics
(6)
Laser Ablation
(5)
Photoluminescence
(5)
Transition Metal Dichalcogenides
(5)
2d Materials
(4)

15 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

5 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Room‐Temperature Ferroelectricity in Hexagonally Layered α‐In2Se3 Nanoflakes down to the Monolayer Limit

Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface

Evidence of indirect gap in monolayer WSe2

Negative circular polarization emissions from WSe2/MoSe2 commensurate heterobilayers

Layer-Dependent and In-Plane Anisotropic Properties of Low-Temperature Synthesized Few-Layer PdSe2 Single Crystals

In Situ Atomic‐Scale Observation of Monolayer MoS2 Devices under High‐Voltage Biasing via Transmission Electron Microscopy

Ultrafast laser ablation, intrinsic threshold, and nanopatterning of monolayer molybdenum disulfide

Tailoring excitonic states of van der Waals bilayers through stacking configuration, band alignment, and valley spin

Boost Lasing Performances of 2D Semiconductor in a Hybrid Tungsten Diselenide Monolayer/Cadmium Selenide Quantum Dots Microcavity Laser

Air-Stable, Large-Area 2D Metals and Semiconductors

Remote growth of oxide heteroepitaxy through MoS2

Ultrafast Exciton Trapping and Exciton–Exciton Annihilation in Large-Area CVD-Grown Monolayer WS2

Time-resolved ARPES Determination of a Quasi-Particle Band Gap and Hot Electron Dynamics in Monolayer MoS2

Ultrafast multi-shot ablation and defect generation in monolayer transition metal dichalcogenides

Efficient Multiple Exciton Generation in Monolayer MoS2

Photoluminescence Enhancement and Structure Repairing of Monolayer MoSe2 by Hydrohalic Acid Treatment

Room‐Temperature Ferromagnetism of Single‐Layer MoS2 Induced by Antiferromagnetic Proximity of Yttrium Iron Garnet

One-dimensional bandgap modulation at continuous few-layer MoS2 steps

Remarkably Deep Moiré Potential for Intralayer Excitons in MoSe2/MoS2 Twisted Heterobilayers

Moiré potential impedes interlayer exciton diffusion in van der Waals heterostructures

Dielectric impact on exciton binding energy and quasiparticle bandgap in monolayer WS2 and WSe2

In Situ Atomic-Scale Observation of Monolayer MoS 2 Devices under High-Voltage Biasing via Transmission Electron Microscopy

Low temperature deposition of high quality single crystalline AlN thin films on sapphire using highly oriented monolayer MoS2 as a buffer layer

Atomic scale depletion region at one dimensional MoSe2-WSe2 heterointerface

Monolayer MoS2 Enabled Single-Crystalline Growth of AlN on Si(100) Using Low-Temperature Helicon Sputtering

Suchergebnisse filtern