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Electronic structures and optical properties of IIIA-doped wurtzite Mg0.25Zn0.75O

中国物理B：英文版, 2014-08 (8), p.430-435

Zheng Shu-Wen He Miao Li Shu-Ti Zhang Yong

2014

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Blue InGaN light-emitting diodes with dip-shaped quantum wells

Chinese physics B, 2011-10, Vol.20 (10), p.491-495

2011

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The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer

Chinese physics B, 2011-09, Vol.20 (9), p.098503-jQuery1323921975411='48'

2011

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Thermal flow air post-treatment under high relative humidity for efficient and reproducible planar CH3NH3PbI3−xClx based perovskite solar cells

Optical and quantum electronics, 2016-12, Vol.48 (12), p.1-10, Article 550

2016

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Theoretical analysis of semi/non-polar InGaN/GaN light-emitting diodes grown on silicon substrates

Chinese physics B, 2015-07, Vol.24 (7), p.77801-1-077801-5

2015

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Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers

Chinese physics B, 2012-06, Vol.21 (6), p.583-587

仵乐娟李述体刘超王海龙卢太平张康肖国伟周玉刚尹以安杨孝东

2012

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Enhanced performances of InGaN/GaN-based blue light-emitting diode with InGaN/AlInGaN superlattice electron blocking layer

Chinese physics B, 2014-06, Vol.23 (6), p.68502-1-068502-5

2014

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Efficiency enhancement of InGaN based blue light emitting diodes with InGaN/GaN multilayer barriers

Chinese physics B, 2012-11, Vol.21 (11), p.528-532

童金辉李述体卢太平刘超王海龙仵乐娟赵璧君王幸福陈鑫

2012

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A dual-blue light-emitting diode based on strain-compensated InGaN-AlGaN/GaN quantum wells

Chinese physics B, 2013-02, Vol.22 (2), p.357-360, Article 026102

严启荣闫其昂石培培牛巧利李述体章勇

2013

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Droop improvement in blue InGaN light-emitting diodes with GaN/InGaN superlattice barriers

Chinese physics B, 2013-06, Vol.22 (6), p.651-655

童金辉赵璧君王幸福陈鑫任志伟李丹伟卓祥景章俊易翰翔李述体

2013

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Advantages of an InGaN-based light emitting diode with a p-InGaN/p-GaN superlattice hole accumulation layer

Chinese physics B, 2013-05, Vol.22 (5), p.604-608

刘超任志伟陈鑫赵璧君王幸福尹以安李述体

2013

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Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content

Chinese physics B, 2013-08, Vol.22 (8), p.698-701, Article 088401

赵璧君陈鑫任志伟童金辉王幸福李丹伟卓祥景章俊易翰翔李述体

2013

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GaP layers grown on GaN with and without buffer layers

Chinese physics B, 2010-10, Vol.19 (10), p.472-476

Li Shu-Ti Cao Jian-Xing Fan Guang-Han Zhang Yong Zheng Shu-Wen Su Jun

2010

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Advantages of InGaN/GaN multiple quantum well solar cells with stepped-thickness quantum wells

Chinese physics B, 2013-07, Vol.22 (7), p.574-577, Article 078402

陈鑫赵璧君任志伟童金辉王幸福卓祥景章俊李丹伟易翰翔李述体

2013

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Efficiency and droop improvement in a blue InGaN-based light emitting diode with a p-InGaN layer inserted in the GaN barriers

Chinese physics B, 2013-09, Vol.22 (9), p.644-647

王幸福童金辉赵璧君陈鑫任志伟李丹伟卓祥景章俊易翰翔李述体

2013

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Efficiency enhancement of ultraviolet light-emitting diodes with segmentally graded p-type AlGaN layer

Chinese physics B, 2019-01, Vol.28 (1), p.18503

2019

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InGaN-Based Blue Light Emitting Diodes with AlInN-GaN-AlInN Electron Blocking Layers

Chinese physics letters, 2013-05, Vol.30 (5), p.58503-1-058503-3

2013

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Improvement of the light output and contact resistance of InGaN-based light-emitting diodes based on tantalum-doped indium tin oxide as p-type electrodes

Chinese physics B, 2010-04, Vol.19 (4), p.047205-047205

2010

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Effect of Mg Doping in GaN Interlayer on the Performance of Green Light-Emitting Diodes

IEEE photonics technology letters, 2015-01, Vol.27 (2), p.117-120

2015

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Enhanced performance of AlGaN-based ultraviolet light-emitting diodes with linearly graded AlGaN inserting layer in electron blocking layer

Chinese physics B, 2019-05, Vol.28 (5), p.58502

2019

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Enhanced performances of InGaN/GaN-based blue LED with an ultra-thin inserting layer between GaN barriers and InGaN wells

Optics communications, 2014-08, Vol.325, p.129-133

2014

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High quality crack-free GaN film grown on si (11 1) substrate without AlN interlayer

Journal of crystal growth, 2014-12, Vol.407, p.58-62

2014

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Improved color rendering of phosphor-converted white light-emitting diodes with dual-blue active layers and n-type AlGaN layer

Optics letters, 2012-05, Vol.37 (9), p.1556

2012

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Effects of multiple interruptions with trimethylindium-treatment in the InGaN/GaN quantum well on green light emitting diodes

Chinese physics B, 2016-10, Vol.25 (10), p.442-445

乔良马紫光陈弘吴海燕陈雪芳杨浩军赵斌何苗郑树文李述体

2016

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Improved performance of near UV light-emitting diodes with a composition-graded p-AlGaN irregular sawtooth electron-blocking layer

Chinese physics B, 2016-08, Vol.25 (8), p.463-467

秦萍宋伟东胡文晓张苑文张崇臻王汝鹏赵亮亮夏超袁松洋尹以安李述体宿世臣

2016

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Electronic structures and optical properties of IIIA-doped wurtzite Mg0.25Zn0.75O

Blue InGaN light-emitting diodes with dip-shaped quantum wells

The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer

Thermal flow air post-treatment under high relative humidity for efficient and reproducible planar CH3NH3PbI3−xClx based perovskite solar cells

Theoretical analysis of semi/non-polar InGaN/GaN light-emitting diodes grown on silicon substrates

Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers

Enhanced performances of InGaN/GaN-based blue light-emitting diode with InGaN/AlInGaN superlattice electron blocking layer

Efficiency enhancement of InGaN based blue light emitting diodes with InGaN/GaN multilayer barriers

A dual-blue light-emitting diode based on strain-compensated InGaN-AlGaN/GaN quantum wells

Droop improvement in blue InGaN light-emitting diodes with GaN/InGaN superlattice barriers

Advantages of an InGaN-based light emitting diode with a p-InGaN/p-GaN superlattice hole accumulation layer

Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content

GaP layers grown on GaN with and without buffer layers

Advantages of InGaN/GaN multiple quantum well solar cells with stepped-thickness quantum wells

Efficiency and droop improvement in a blue InGaN-based light emitting diode with a p-InGaN layer inserted in the GaN barriers

Efficiency enhancement of ultraviolet light-emitting diodes with segmentally graded p-type AlGaN layer

InGaN-Based Blue Light Emitting Diodes with AlInN-GaN-AlInN Electron Blocking Layers

Improvement of the light output and contact resistance of InGaN-based light-emitting diodes based on tantalum-doped indium tin oxide as p-type electrodes

Effect of Mg Doping in GaN Interlayer on the Performance of Green Light-Emitting Diodes

Enhanced performance of AlGaN-based ultraviolet light-emitting diodes with linearly graded AlGaN inserting layer in electron blocking layer

Enhanced performances of InGaN/GaN-based blue LED with an ultra-thin inserting layer between GaN barriers and InGaN wells

High quality crack-free GaN film grown on si (11 1) substrate without AlN interlayer

Improved color rendering of phosphor-converted white light-emitting diodes with dual-blue active layers and n-type AlGaN layer

Effects of multiple interruptions with trimethylindium-treatment in the InGaN/GaN quantum well on green light emitting diodes

Improved performance of near UV light-emitting diodes with a composition-graded p-AlGaN irregular sawtooth electron-blocking layer

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