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Effects of processing routes on room temperature tensile strength and elongation for Inconel 718

Materials & design, 2017-04, Vol.119, p.235-243

2017

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Effect of processing parameters on the fractions of martensite in 17-4 PH stainless steel fabricated by selective laser melting

Journal of alloys and compounds, 2021-04, Vol.859, p.157758, Article 157758

2021

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CESL-Stressor-Induced Morphological Instability of Pt-Dissolved Ni Germanosilicide Formed on Silicon Germanium Epilayer

IEEE electron device letters, 2011-12, Vol.32 (12), p.1725-1727

2011

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Investigation on the thermal expansion behavior of FeCoNi and Fe30Co30Ni30Cr10-xMnx high entropy alloys

Materials chemistry and physics, 2021-10, Vol.271, p.124907, Article 124907

2021

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High density metal-insulator-metal capacitor based on ZrO2∕Al2O3∕ZrO2 laminate dielectric

Applied physics letters, 2008-07, Vol.93 (3)

2008

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Tetragonal ZrO2/Al2O3 Stack as High-κ Gate Dielectric for Si-Based MOS Devices

IEEE electron device letters, 2010-09, Vol.31 (9), p.1014-1016

2010

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Creep Strengthening of Iron-Nickel-Base Superalloy for High-Stress Condition by Cubo-Octahedral Nanoparticles Precipitation

MRS proceedings, 2014, Vol.1715 (1), p.7-12, Article mrss14-1715-eee06-15

2014

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Structure and property changes of ZrO2/Al2O3/ZrO2 laminate induced by low-temperature NH3 annealing applicable to metal-insulator-metal capacitor

Thin solid films, 2010-07, Vol.518 (18), p.5272-5277

2010

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Separation of Silicon Carbide and Silicon in Silicon Wafer Cutting Waste by means of Liquid-Liquid Extraction Method for Recovery

Resources Processing, 2020, Vol.67(1), pp.13-21

2020

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Tetragonal \hbox/\hbox\hbox Stack as High- \kappa Gate Dielectric for Si-Based MOS Devices

IEEE electron device letters, 2010-09, Vol.31 (9), p.1014-1016

2010

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Estimating Comparable Scores Using Surrogate Variables

Applied psychological measurement, 2001-06, Vol.25 (2), p.197-207

2001

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Interface-specific reorientation of embedded tetragonal ZrO2 particles in Ni1−xO polycrystals

Materials science & engineering. A, Structural materials : properties, microstructure and processing, 2005-05, Vol.398 (1-2), p.309-317

2005

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Mesopores in nonstoichiometric oxides via oxyexsolution and Kirkendall effects

Journal of the European Ceramic Society, 2007, Vol.27 (6), p.2355-2359

2007

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Oxidation–decomposition facilitated reorientation of nanoparticles in reactively sintered (Ni 0.33Co 0.67) 1− δO polycrystals

Materials science & engineering. A, Structural materials : properties, microstructure and processing, 2003-02, Vol.343 (1), p.227-234

2003

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Effect of plasma operation pressure on burn-in efficiency of an SIP–PVD chamber

Microelectronic engineering, 2008, Vol.85 (1), p.126-130

2008

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Transformation-enabled cleaving and healing in zirconia dispersed Co1-xO

Materials science & engineering. A, Structural materials : properties, microstructure and processing, 2004-11, Vol.386 (1-2), p.104-111

2004

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Morphology evolution in TiN/Al–0.5Cu/Ti interconnection during chamber long stay and post-deposition annealing correlated to defect formation in metallization processing

Microelectronic engineering, 2008-07, Vol.85 (7), p.1502-1510

2008

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Separation of silicon carbide and silicon powders in kerf loss slurry through phase transfer separation method with sodium dodecyl sulfate addition

Separation and purification technology, 2020-03, Vol.235, p.116208, Article 116208

2020

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液液抽出法を用いたシリコンウエハー研削廃棄物中のシリコンカーバイドとシリコンの分離回収

環境資源工学, 2020, Vol.67(1), pp.13-21

2020

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Tetragonal hbox ZrO 2 / hbox Al 2 hbox O 3 Stack as High- Kappa Gate Dielectric for Si-Based MOS Devices

IEEE electron device letters, 2010-09, Vol.31 (9), p.1014-1016

2010

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Tetragonal [Formula Omitted] Stack as High-[Formula Omitted] Gate Dielectric for Si-Based MOS Devices

IEEE electron device letters, 2010-09, Vol.31 (9), p.1014

2010

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Nitrided Tetragonalhbox{ZrO}_{2} as the Charge-Trapping Layer for Nonvolatile Memory Application

IEEE electron device letters, 2009-12, Vol.30 (12), p.1290-1292

2009

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Nitrided Tetragonal \hbox as the Charge-Trapping Layer for Nonvolatile Memory Application

IEEE electron device letters, 2009-12, Vol.30 (12), p.1290-1292

2009

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Nitrided Tetragonal [Formula Omitted] as the Charge-Trapping Layer for Nonvolatile Memory Application

IEEE electron device letters, 2009-12, Vol.30 (12), p.1290

2009

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Structure and property changes of ZrO 2/Al 2O 3/ZrO 2 laminate induced by low-temperature NH 3 annealing applicable to metal–insulator–metal capacitor

Thin solid films, 2010, Vol.518 (18), p.5272-5277

2010

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Effects of processing routes on room temperature tensile strength and elongation for Inconel 718

Effect of processing parameters on the fractions of martensite in 17-4 PH stainless steel fabricated by selective laser melting

CESL-Stressor-Induced Morphological Instability of Pt-Dissolved Ni Germanosilicide Formed on Silicon Germanium Epilayer

Investigation on the thermal expansion behavior of FeCoNi and Fe30Co30Ni30Cr10-xMnx high entropy alloys

High density metal-insulator-metal capacitor based on ZrO2∕Al2O3∕ZrO2 laminate dielectric

Tetragonal ZrO2/Al2O3 Stack as High-κ Gate Dielectric for Si-Based MOS Devices

Creep Strengthening of Iron-Nickel-Base Superalloy for High-Stress Condition by Cubo-Octahedral Nanoparticles Precipitation

Structure and property changes of ZrO2/Al2O3/ZrO2 laminate induced by low-temperature NH3 annealing applicable to metal-insulator-metal capacitor

Separation of Silicon Carbide and Silicon in Silicon Wafer Cutting Waste by means of Liquid-Liquid Extraction Method for Recovery

Tetragonal \hbox/\hbox\hbox Stack as High- \kappa Gate Dielectric for Si-Based MOS Devices

Estimating Comparable Scores Using Surrogate Variables

Interface-specific reorientation of embedded tetragonal ZrO2 particles in Ni1−xO polycrystals

Mesopores in nonstoichiometric oxides via oxyexsolution and Kirkendall effects

Oxidation–decomposition facilitated reorientation of nanoparticles in reactively sintered (Ni 0.33Co 0.67) 1− δO polycrystals

Effect of plasma operation pressure on burn-in efficiency of an SIP–PVD chamber

Transformation-enabled cleaving and healing in zirconia dispersed Co1-xO

Morphology evolution in TiN/Al–0.5Cu/Ti interconnection during chamber long stay and post-deposition annealing correlated to defect formation in metallization processing

Separation of silicon carbide and silicon powders in kerf loss slurry through phase transfer separation method with sodium dodecyl sulfate addition

液液抽出法を用いたシリコンウエハー研削廃棄物中のシリコンカーバイドとシリコンの分離回収

Tetragonal hbox ZrO 2 / hbox Al 2 hbox O 3 Stack as High- Kappa Gate Dielectric for Si-Based MOS Devices

Tetragonal [Formula Omitted] Stack as High-[Formula Omitted] Gate Dielectric for Si-Based MOS Devices

Nitrided Tetragonalhbox{ZrO}_{2} as the Charge-Trapping Layer for Nonvolatile Memory Application

Nitrided Tetragonal \hbox as the Charge-Trapping Layer for Nonvolatile Memory Application

Nitrided Tetragonal [Formula Omitted] as the Charge-Trapping Layer for Nonvolatile Memory Application

Structure and property changes of ZrO 2/Al 2O 3/ZrO 2 laminate induced by low-temperature NH 3 annealing applicable to metal–insulator–metal capacitor

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