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A Descriptive Survey of Atmospheric Music Broadcasting in Hot Spring Hotels and Its Further Marketing Strategy

SAGE open, 2023-01, Vol.13 (1)

2023

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Impact of High-Temperature Annealing on Interfacial Layers Grown by O2 Plasma on Si0.5Ge0.5 Substrates

IEEE transactions on electron devices, 2022-03, Vol.69 (3), p.1265-1270

2022

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Effects of exercise training on sleep quality and heart rate variability in middle-aged and older adults with poor sleep quality: a randomized controlled trial

Journal of clinical sleep medicine, 2020-09, Vol.16 (9), p.1483-1492

2020

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The Relationship of Sleep Duration with Obesity and Sarcopenia in Community-Dwelling Older Adults

Gerontology (Basel), 2015-08, Vol.61 (5), p.399-406

2015

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Effect of Oxygen Treatment on the Electrical Performance and Reliability of IWO Thin-Film Transistors

IEEE transactions on nanotechnology, 2024, Vol.23, p.299-302

2024

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High-Interface-Quality Hf-Based Gate Stacks on Si0.5Ge0.5 Through Aluminum Capping

IEEE electron device letters, 2021-12, Vol.42 (12), p.1723-1726

2021

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Electrical Characteristics of Si0.8Ge0.2 p-MOSFET With TMA Pre-Doping and NH3 Plasma IL Treatment

IEEE transactions on electron devices, 2022-04, Vol.69 (4), p.1776-1780

2022

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High-Stability IWO Thin-Film Transistors Under Microwave Annealing for Low Thermal Budget Application

IEEE transactions on nanotechnology, 2024, Vol.23, p.516-520

2024

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Effect of Electrical Performance and Reliability by Adjustment of the Sequence and Concentration of HfAlO x on IWO Thin-Film Transistors

IEEE transactions on nanotechnology, 2024, Vol.23, p.422-426

2024

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Effect of Electrical Performance and Reliability by Adjustment of the Sequence and Concentration of HfAlOx on IWO Thin-Film Transistors

IEEE transactions on nanotechnology, 2024, Vol.23, p.422-426

2024

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Aggressive Equivalent Oxide Thickness of ~0.7 nm on Si0.8Ge0.2 Through HfO2 Dielectric Direct Deposition

IEEE electron device letters, 2022-10, Vol.43 (10), p.1605-1608

2022

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Demonstration of HfO2-Based Gate Dielectric With ~0.8-nm Equivalent Oxide Thickness on Si0.8Ge0.2 by Trimethylaluminum Pre-Treatment and Al Scavenger

IEEE journal of the Electron Devices Society, 2023, Vol.11, p.274-281

2023

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Skeletal Stem Cell–Derived Exosomes Promote Meniscal Tear Healing and Ameliorate Secondary Osteoarthritis

The American journal of sports medicine, 2024-08, Vol.52 (10), p.2512-2523

2024

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Reduced mitochondria membrane potential and lysosomal acidification are associated with decreased oligomeric Aβ degradation induced by hyperglycemia: A study of mixed glia cultures

PloS one, 2022-01, Vol.17 (1), p.e0260966-e0260966

2022

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Trajectories of functional exercise capacity in patients undergoing pulmonary rehabilitation

International journal of chronic obstructive pulmonary disease, 2019-04, Vol.14, p.863-870

2019

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Routing and wavelength assignment for augmented cubes in array-based wavelength-division-multiplexing optical networks

International journal of computer mathematics. Computer systems theory, 2018-04, Vol.3 (2), p.92-105

2018

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Electron Emission Properties of Nitrogen-Induced Localized Defects in InAsN/GaAs Quantum Dots

Japanese Journal of Applied Physics, 2011-11, Vol.50 (11), p.111001-111001-6

2011

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P11-10-5 Molecular mechaniam of isocupressic acid(IA)suppress MA-10 cell steroidogenesis

ENDOCRINE JOURNAL, 2010, Vol.57 (suppl.2-2), p.S613-S613

2010

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Electron Emission Properties of Nitrogen-Induced Localized Defects in InAsN/GaAs Quantum Dots

Japanese Journal of Applied Physics, 2011-11, Vol.50 (11R), p.111001

2011

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High-Interface-Quality Hf-Based Gate Stacks on Si 0.5 Ge 0.5 Through Aluminum Capping

IEEE electron device letters, 2021-12, Vol.42 (12), p.1723-1726

2021

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Impact of High-Temperature Annealing on Interfacial Layers Grown by O 2 Plasma on Si0. 5 Ge 0.5 Substrates

IEEE transactions on electron devices, 2022-03, Vol.69 (3), p.1265-1270

2022

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Photoluminescence Study of Interdot Carrier Transfer on Strain-relaxed InAs Quantum Dots

AIP conference proceedings, 2011, Vol.1399 (1)

2011

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Electrical Characteristics of Si 0.8 Ge 0.2 p-MOSFET With TMA Pre-Doping and NH 3 Plasma IL Treatment

IEEE transactions on electron devices, 2022-04, Vol.69 (4), p.1776-1780

2022

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Aggressive Equivalent Oxide Thickness of ~0.7 nm on Si 0.8 Ge 0.2 Through HfO 2 Dielectric Direct Deposition

IEEE electron device letters, 2022-10, Vol.43 (10), p.1605-1608

2022

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Reduced mitochondria membrane potential and lysosomal acidification are associated with decreased oligomeric A[beta] degradation induced by hyperglycemia: A study of mixed glia cultures

PloS one, 2022-01, Vol.17 (1), p.e0260966

2022

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A Descriptive Survey of Atmospheric Music Broadcasting in Hot Spring Hotels and Its Further Marketing Strategy

Impact of High-Temperature Annealing on Interfacial Layers Grown by O2 Plasma on Si0.5Ge0.5 Substrates

Effects of exercise training on sleep quality and heart rate variability in middle-aged and older adults with poor sleep quality: a randomized controlled trial

The Relationship of Sleep Duration with Obesity and Sarcopenia in Community-Dwelling Older Adults

Effect of Oxygen Treatment on the Electrical Performance and Reliability of IWO Thin-Film Transistors

High-Interface-Quality Hf-Based Gate Stacks on Si0.5Ge0.5 Through Aluminum Capping

Electrical Characteristics of Si0.8Ge0.2 p-MOSFET With TMA Pre-Doping and NH3 Plasma IL Treatment

High-Stability IWO Thin-Film Transistors Under Microwave Annealing for Low Thermal Budget Application

Effect of Electrical Performance and Reliability by Adjustment of the Sequence and Concentration of HfAlO x on IWO Thin-Film Transistors

Effect of Electrical Performance and Reliability by Adjustment of the Sequence and Concentration of HfAlOx on IWO Thin-Film Transistors

Aggressive Equivalent Oxide Thickness of ~0.7 nm on Si0.8Ge0.2 Through HfO2 Dielectric Direct Deposition

Demonstration of HfO2-Based Gate Dielectric With ~0.8-nm Equivalent Oxide Thickness on Si0.8Ge0.2 by Trimethylaluminum Pre-Treatment and Al Scavenger

Skeletal Stem Cell–Derived Exosomes Promote Meniscal Tear Healing and Ameliorate Secondary Osteoarthritis

Reduced mitochondria membrane potential and lysosomal acidification are associated with decreased oligomeric Aβ degradation induced by hyperglycemia: A study of mixed glia cultures

Trajectories of functional exercise capacity in patients undergoing pulmonary rehabilitation

Routing and wavelength assignment for augmented cubes in array-based wavelength-division-multiplexing optical networks

Electron Emission Properties of Nitrogen-Induced Localized Defects in InAsN/GaAs Quantum Dots

P11-10-5 Molecular mechaniam of isocupressic acid(IA)suppress MA-10 cell steroidogenesis

Electron Emission Properties of Nitrogen-Induced Localized Defects in InAsN/GaAs Quantum Dots

High-Interface-Quality Hf-Based Gate Stacks on Si 0.5 Ge 0.5 Through Aluminum Capping

Impact of High-Temperature Annealing on Interfacial Layers Grown by O 2 Plasma on Si0. 5 Ge 0.5 Substrates

Photoluminescence Study of Interdot Carrier Transfer on Strain-relaxed InAs Quantum Dots

Electrical Characteristics of Si 0.8 Ge 0.2 p-MOSFET With TMA Pre-Doping and NH 3 Plasma IL Treatment

Aggressive Equivalent Oxide Thickness of ~0.7 nm on Si 0.8 Ge 0.2 Through HfO 2 Dielectric Direct Deposition

Reduced mitochondria membrane potential and lysosomal acidification are associated with decreased oligomeric A[beta] degradation induced by hyperglycemia: A study of mixed glia cultures

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