UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Effect of water depth and waterway obstructions on the divergence and confluence areas of Dongting Lake and the Yangtze River after the operation of the Three Gorges Project

River, 2023-02, Vol.2 (1), p.88-108

2023

Volltextzugriff (PDF)

Transport patterns of the coarse and fine sediments and its causes in the downstream of the Three Gorges Dam

Hu po ke xue, 2017-07, Vol.29 (4), p.942-954

2017

Volltextzugriff (PDF)

Shared neural representations of syntax during online dyadic communication

NeuroImage (Orlando, Fla.), 2019-09, Vol.198, p.63-72

2019

Volltextzugriff (PDF)

Affiliative bonding between teachers and students through interpersonal synchronisation in brain activity

Social cognitive and affective neuroscience, 2020-01, Vol.15 (1), p.97-109

2020

Volltextzugriff (PDF)

Research on Bearing Characteristics of Grid Composite Foundation Based on Silt Solidification

Journal of performance of constructed facilities, 2021-10, Vol.35 (5)

2021

Volltextzugriff (PDF)

Coarse and fine sediment transportation patterns and causes downstream of the Three Gorges Dam

Frontiers of earth science, 2018-12, Vol.12 (4), p.750-764

2018

Volltextzugriff (PDF)

Cell-Membrane-Anchored DNA Nanoplatform for Programming Cellular Interactions

Journal of the American Chemical Society, 2019-11, Vol.141 (45), p.18013-18020

2019

Volltextzugriff (PDF)

DNA-Based Dynamic Mimicry of Membrane Proteins for Programming Adaptive Cellular Interactions

Journal of the American Chemical Society, 2021-03, Vol.143 (12), p.4585-4592

2021

Volltextzugriff (PDF)

Static electric field (SEF) exposure promotes the proliferation of B lymphocytes

International immunopharmacology, 2023-12, Vol.125 (Pt A), p.111006-111006, Article 111006

2023

Volltextzugriff (PDF)

Resistance switching characteristics of Ag/ZnO/graphene resistive random access memory

Vacuum, 2023-01, Vol.207, p.111625, Article 111625

2023

Volltextzugriff (PDF)

Fairness mechanism and stackelberg strategy for multi-agent systems: A case study of legends of the three kingdoms

Alexandria engineering journal, 2024-10, Vol.104, p.490-503

2024

Volltextzugriff (PDF)

72 nm Pitch Hexagonal MTJ Array on DRAM Platform for High-Density MRAM

IEEE transactions on magnetics, 2021-11, Vol.57 (11), p.1-6

2021

Volltextzugriff (PDF)

Enhanced TDDB-Reliability of Ultra-Thin Zirconia Capacitors Featuring Al-Doped Oxide Layers

IEEE electron device letters, 2024-06, Vol.45 (6), p.1004-1007

2024

Volltextzugriff (PDF)

Defect-Based Empirical Model for On-State Degradation in Sub-20-nm DRAM Periphery pFETs Under Arbitrary Condition

IEEE transactions on electron devices, 2022-12, Vol.69 (12), p.6669-6675

2022

Volltextzugriff (PDF)

Understanding Retention Time Distribution in Buried-Channel-Array-Transistors (BCAT) Under Sub-20-nm DRAM Node-Part II: PBTI Aging and Optimization

IEEE transactions on electron devices, 2024-08, Vol.71 (8), p.4469-4475

2024

Volltextzugriff (PDF)

Understanding Retention Time Distribution in Buried-Channel-Array-Transistors (BCAT) Under Sub-20-nm DRAM Node-Part I: Defect-Based Statistical Compact Model

IEEE transactions on electron devices, 2024-08, Vol.71 (8), p.4462-4468

2024

Volltextzugriff (PDF)

High-capacity cathode for aqueous zinc-ion battery based on MnOx-modified bismuth vanadate

Journal of energy storage, 2023-12, Vol.74, Article 109355

2023

Volltextzugriff (PDF)

High-capacity cathode for aqueous zinc-ion battery based on MnO -modified bismuth vanadate

Journal of energy storage, 2023-12, Vol.74, p.109355, Article 109355

2023

Volltextzugriff (PDF)

Double-sided Row Hammer Effect in Sub-20 nm DRAM: Physical Mechanism, Key Features and Mitigation

2023 IEEE International Reliability Physics Symposium (IRPS), 2023, p.1-10

2023

Volltextzugriff (PDF)

Adaptive DLL Update Scheme for Power Fluctuation Immunity Using Phase Error Detector

2021 IEEE 14th International Conference on ASIC (ASICON), 2021, p.1-4

2021

Volltextzugriff (PDF)

Pitch Device Design in 10nm-Class DRAM Process through DTCO

2021 IEEE 14th International Conference on ASIC (ASICON), 2021, p.1-4

2021

Volltextzugriff (PDF)

Impact of Hydrogen Anneal on Peripheral PMOS NBTI and Array Transistor GIDL in DRAM

2021 IEEE 14th International Conference on ASIC (ASICON), 2021, p.1-4

2021

Volltextzugriff (PDF)

Improve DRAM Leakage Issue During RAS Operational Phase Through TCAD Simulation

2019 IEEE 13th International Conference on ASIC (ASICON), 2019, p.1-4

2019

Volltextzugriff (PDF)

Static electric field（SEF）exposure promotes the proliferation of B lymphocytes

International immunopharmacology, Article 111006

Volltextzugriff (PDF)

Normalized mutual integral difference method to extract threshold voltage of MOSFETs

IEEE electron device letters, 2002-07, Vol.23 (7), p.428-430

2002

Volltextzugriff (PDF)

1 – 25 von 31

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(19)
Mit Volltextzugriff
(22)

Publikationsform

Artikel
(21)
Tagungsberichte
(10)

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(20)
Technology
(14)
Engineering
(11)
Random Access Memory
(10)
Engineering, Electrical & Electronic
(9)
Physical Sciences
(9)
Dynamic Random Access Memory
(6)
Physics
(6)
Physics, Applied
(6)
Dram
(4)
Transistors
(4)
Arrays
(3)
Capacitors
(3)
Circuit Reliability
(3)
Degradation
(3)
Life Sciences & Biomedicine
(3)
Optimization
(3)
Stress
(3)
Buried-Channel-Array-Transistor
(2)
Canyons
(2)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(1)

Menü

Weitere Dienste

Einstellungen

Effect of water depth and waterway obstructions on the divergence and confluence areas of Dongting Lake and the Yangtze River after the operation of the Three Gorges Project

Transport patterns of the coarse and fine sediments and its causes in the downstream of the Three Gorges Dam

Shared neural representations of syntax during online dyadic communication

Affiliative bonding between teachers and students through interpersonal synchronisation in brain activity

Research on Bearing Characteristics of Grid Composite Foundation Based on Silt Solidification

Coarse and fine sediment transportation patterns and causes downstream of the Three Gorges Dam

Cell-Membrane-Anchored DNA Nanoplatform for Programming Cellular Interactions

DNA-Based Dynamic Mimicry of Membrane Proteins for Programming Adaptive Cellular Interactions

Static electric field (SEF) exposure promotes the proliferation of B lymphocytes

Resistance switching characteristics of Ag/ZnO/graphene resistive random access memory

Fairness mechanism and stackelberg strategy for multi-agent systems: A case study of legends of the three kingdoms

72 nm Pitch Hexagonal MTJ Array on DRAM Platform for High-Density MRAM

Enhanced TDDB-Reliability of Ultra-Thin Zirconia Capacitors Featuring Al-Doped Oxide Layers

Defect-Based Empirical Model for On-State Degradation in Sub-20-nm DRAM Periphery pFETs Under Arbitrary Condition

Understanding Retention Time Distribution in Buried-Channel-Array-Transistors (BCAT) Under Sub-20-nm DRAM Node-Part II: PBTI Aging and Optimization

Understanding Retention Time Distribution in Buried-Channel-Array-Transistors (BCAT) Under Sub-20-nm DRAM Node-Part I: Defect-Based Statistical Compact Model

High-capacity cathode for aqueous zinc-ion battery based on MnOx-modified bismuth vanadate

High-capacity cathode for aqueous zinc-ion battery based on MnO -modified bismuth vanadate

Double-sided Row Hammer Effect in Sub-20 nm DRAM: Physical Mechanism, Key Features and Mitigation

Adaptive DLL Update Scheme for Power Fluctuation Immunity Using Phase Error Detector

Pitch Device Design in 10nm-Class DRAM Process through DTCO

Impact of Hydrogen Anneal on Peripheral PMOS NBTI and Array Transistor GIDL in DRAM

Improve DRAM Leakage Issue During RAS Operational Phase Through TCAD Simulation

Static electric field（SEF）exposure promotes the proliferation of B lymphocytes

Normalized mutual integral difference method to extract threshold voltage of MOSFETs

Suchergebnisse filtern