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Aggressive EOT Scaling of Ge pMOSFETs With HfO2/AlOx/GeOx Gate-Stacks Fabricated by Ozone Postoxidation

IEEE electron device letters, 2016-07, Vol.37 (7), p.831-834

2016

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High-Performance Germanium pMOSFETs With NiGe Metal Source/Drain Fabricated by Microwave Annealing

IEEE transactions on electron devices, 2016-07, Vol.63 (7), p.2665-2670

2016

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Electrical Properties of Ge pMOSFETs With Ultrathin EOT HfO2/AlOx/GeOx Gate-Stacks and NiGe Metal Source/Drain

IEEE transactions on electron devices, 2017-12, Vol.64 (12), p.4831-4837

2017

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Multi-Objective Optimization of Organic Rankine Cycle (ORC) for Tractor Waste Heat Recovery Based on Particle Swarm Optimization

Energies (Basel), 2022-09, Vol.15 (18), p.6720

2022

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Traps Around Ge Schottky Junction Interface: Quantitative Characterization and Impact on the Electrical Properties of Ge MOS Devices

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.350-357

2020

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Potential and recent advances of microcarriers in repairing cartilage defects

Journal of orthopaedic translation, 2021-03, Vol.27, p.101-109

2021

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The Impact of Channel Semiconductor on the Memory Characteristics of Ferroelectric Field Effect Transistors

IEEE journal of the Electron Devices Society, 2020-01, Vol.8, p.1-1

2020

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A TM-Based Adaptive Learning Data-Model for Trajectory Tracking and Real-Time Control of a Class of Nonlinear Systems

IEEE transactions on circuits and systems. I, Regular papers, 2022-02, Vol.69 (2), p.859-871

2022

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NiGe metal source/drain Ge pMOSFETs for future high performance VLSI circuits applications

2017 IEEE 12th International Conference on ASIC (ASICON), 2017, p.1057-1060

2017

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Quantitative Characterization of Interface Traps in Ferroelectric/Dielectric Stack Using Conductance Method

IEEE transactions on electron devices, 2020-12, Vol.67 (12), p.5315-5321

2020

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DHHFL-MABAC approach based on distance measure and comprehensive weight for sewage treatment company selection

Soft computing (Berlin, Germany), 2023-12, Vol.27 (24), p.18885-18900

2023

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Asymmetric Metal/α-In2Se3/Si Crossbar Ferroelectric Semiconductor Junction

ACS nano, 2021-03, Vol.15 (3), p.5689-5695

2021

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Universal PBTI Relaxation on the Negative VTH Shift in Oxide Semiconductor Transistors and New Insights

IEEE electron device letters, 2023-07, Vol.44 (7), p.1-1

2023

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Impact of Electrical Stress on Defect Generation in Thin GeO2/Ge Gate Stacks Fabricated by Thermal Oxidation

IEEE transactions on electron devices, 2020-06, Vol.67 (6), p.2516-2521

2020

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Quantitative Characterization of Ferroelectric/Dielectric Interface Traps by Pulse Measurements

IEEE transactions on electron devices, 2021-03, Vol.68 (3), p.1214-1220

2021

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A Effectiveness-and Efficiency-Based Improved Approach for Measuring Ecological Well-Being Performance in China

International journal of environmental research and public health, 2023-01, Vol.20 (3), p.2024

2023

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Universal PBTI Relaxation on the Negative V TH Shift in Oxide Semiconductor Transistors and New Insights

IEEE electron device letters, 2023-07, Vol.44 (7), p.1136-1139

2023

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Application of N-doped NiCo 2 O 4 /NiO/Co 3 O 4 composites rich in oxygen vacancies in electromagnetic wave absorption

Nanotechnology, 2024-10, Vol.35 (44), p.445702

2024

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Classification and recognition method of rice situation based on gray correlation degree

Journal of stored products research, 2024-12, Vol.109, p.102448, Article 102448

2024

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Comprehensive Understanding of the Mobility Scattering Mechanisms and Evaluation of the Universal Mobility in Ultra-Thin-Body Ge-OI p-and n-MOSFETs

IEEE transactions on electron devices, 2024-10, Vol.71 (10), p.1-6

2024

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Thermal Stability Enhancement of NiGe Metal Source/Drain and Ge pMOSFETs by Dopant Segregation

IEEE transactions on electron devices, 2019-12, Vol.66 (12), p.5284-5288

2019

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Application of N-doped NiCo2O4/NiO/Co3O4composites rich in oxygen vacancies in electromagnetic wave absorption

Nanotechnology, 2024-08, Vol.35 (44)

2024

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Impact of Electrical Stress on Defect Generation in Thin GeO 2 /Ge Gate Stacks Fabricated by Thermal Oxidation

IEEE transactions on electron devices, 2020-06, Vol.67 (6), p.2516-2521

2020

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Electrical Properties of Each Channels in Vertical Stacked Gate-All-Around Nanosheet s-Si pMOSFETs

2023 International Conference on IC Design and Technology (ICICDT), 2023, p.159-162

2023

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The prognostic value of geriatric nutritional risk index in elderly patients with severe community-acquired pneumonia: A retrospective study

Medicine (Baltimore), 2020-09, Vol.99 (37), p.e22217-e22217

2020

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Aggressive EOT Scaling of Ge pMOSFETs With HfO2/AlOx/GeOx Gate-Stacks Fabricated by Ozone Postoxidation

High-Performance Germanium pMOSFETs With NiGe Metal Source/Drain Fabricated by Microwave Annealing

Electrical Properties of Ge pMOSFETs With Ultrathin EOT HfO2/AlOx/GeOx Gate-Stacks and NiGe Metal Source/Drain

Multi-Objective Optimization of Organic Rankine Cycle (ORC) for Tractor Waste Heat Recovery Based on Particle Swarm Optimization

Traps Around Ge Schottky Junction Interface: Quantitative Characterization and Impact on the Electrical Properties of Ge MOS Devices

Potential and recent advances of microcarriers in repairing cartilage defects

The Impact of Channel Semiconductor on the Memory Characteristics of Ferroelectric Field Effect Transistors

A TM-Based Adaptive Learning Data-Model for Trajectory Tracking and Real-Time Control of a Class of Nonlinear Systems

NiGe metal source/drain Ge pMOSFETs for future high performance VLSI circuits applications

Quantitative Characterization of Interface Traps in Ferroelectric/Dielectric Stack Using Conductance Method

DHHFL-MABAC approach based on distance measure and comprehensive weight for sewage treatment company selection

Asymmetric Metal/α-In2Se3/Si Crossbar Ferroelectric Semiconductor Junction

Universal PBTI Relaxation on the Negative VTH Shift in Oxide Semiconductor Transistors and New Insights

Impact of Electrical Stress on Defect Generation in Thin GeO2/Ge Gate Stacks Fabricated by Thermal Oxidation

Quantitative Characterization of Ferroelectric/Dielectric Interface Traps by Pulse Measurements

A Effectiveness-and Efficiency-Based Improved Approach for Measuring Ecological Well-Being Performance in China

Universal PBTI Relaxation on the Negative V TH Shift in Oxide Semiconductor Transistors and New Insights

Application of N-doped NiCo 2 O 4 /NiO/Co 3 O 4 composites rich in oxygen vacancies in electromagnetic wave absorption

Classification and recognition method of rice situation based on gray correlation degree

Comprehensive Understanding of the Mobility Scattering Mechanisms and Evaluation of the Universal Mobility in Ultra-Thin-Body Ge-OI p-and n-MOSFETs

Thermal Stability Enhancement of NiGe Metal Source/Drain and Ge pMOSFETs by Dopant Segregation

Application of N-doped NiCo2O4/NiO/Co3O4composites rich in oxygen vacancies in electromagnetic wave absorption

Impact of Electrical Stress on Defect Generation in Thin GeO 2 /Ge Gate Stacks Fabricated by Thermal Oxidation

Electrical Properties of Each Channels in Vertical Stacked Gate-All-Around Nanosheet s-Si pMOSFETs

The prognostic value of geriatric nutritional risk index in elderly patients with severe community-acquired pneumonia: A retrospective study

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