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Improved Epitaxy of AlN Film for Deep‐Ultraviolet Light‐Emitting Diodes Enabled by Graphene

Advanced materials (Weinheim), 2019-06, Vol.31 (23), p.e1807345-n/a

2019

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Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet light emitting diodes on nano-patterned sapphire substrate

Applied physics letters, 2019-03, Vol.114 (9)

2019

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Enhancement of Heat Dissipation in Ultraviolet Light‐Emitting Diodes by a Vertically Oriented Graphene Nanowall Buffer Layer

Advanced materials (Weinheim), 2019-07, Vol.31 (29), p.e1901624-n/a

2019

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High‐Brightness Blue Light‐Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer

Advanced materials (Weinheim), 2018-07, Vol.30 (30), p.e1801608-n/a

2018

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Influence of quantum confined Stark effect and carrier localization effect on modulation bandwidth for GaN-based LEDs

Applied physics letters, 2017-10, Vol.111 (17)

2017

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Fast Growth of Strain-Free AlN on Graphene-Buffered Sapphire

Journal of the American Chemical Society, 2018-09, Vol.140 (38), p.11935-11941

2018

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GaN/AlN quantum-disk nanorod 280 nm deep ultraviolet light emitting diodes by molecular beam epitaxy

Optics letters, 2020-01, Vol.45 (1), p.121

2020

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Metal-assisted photochemical etching of GaN nanowires: The role of metal distribution

Electrochemistry communications, 2019-06, Vol.103, p.66-71

2019

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Gene expression-based immune infiltration analyses of renal cancer and their associations with survival outcome

BMC cancer, 2021-05, Vol.21 (1), p.1-595, Article 595

2021

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Atomic‐Scale Mechanism of Spontaneous Polarity Inversion in AlN on Nonpolar Sapphire Substrate Grown by MOCVD

Small (Weinheim an der Bergstrasse, Germany), 2022-04, Vol.18 (16), p.e2200057-n/a

2022

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Enhancement of the light output power of InGaN/GaN light-emitting diodes grown on pyramidal patterned sapphire substrates in the micro- and nanoscale

Journal of applied physics, 2008-01, Vol.103 (1)

2008

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Clinical value of combined serum CA125, NSE and 24-hour urine VMA for the prediction of recurrence in children with neuroblastoma

Italian journal of pediatrics, 2023-08, Vol.49 (1), p.1-102, Article 102

2023

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AlGaN Nanowires Grown on SiO2/Si (100) Using Graphene as a Buffer Layer

Crystal growth & design, 2019-10, Vol.19 (10), p.5516-5522

2019

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Light-Emitting Diodes: Materials, Processes, Devices and Applications

1st ed. 2019., 2019

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Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode

Light, science & applications, 2022-04, Vol.11 (1), p.88-12, Article 88

2022

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III-Nitride Deep UV LED Without Electron Blocking Layer

IEEE photonics journal, 2019-04, Vol.11 (2), p.1-11

2019

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III-Nitrides Light Emitting Diodes: Technology and Applications

1st Edition 2020, 2020

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Effect of photonic crystals on the light extraction of GaN-based LED for different polarization modes of spontaneous radiation

Results in physics, 2019-12, Vol.15, p.102632, Article 102632

2019

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Enhancing the spontaneous emission rate by modulating carrier distribution in GaN-based surface plasmon light-emitting diodes

Optics express, 2017-05, Vol.25 (9), p.9617-9627

2017

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Improving the Modulation Bandwidth of GaN‐Based Light‐Emitting Diodes for High‐Speed Visible Light Communication: Countermeasures and Challenges

Advanced photonics research, 2021-12, Vol.2 (12), p.n/a

2021

Volltextzugriff (PDF)

Reducing stimulated emission threshold power density of AlGaN/AlN multiple quantum wells by nano-trench-patterned AlN template

Journal of alloys and compounds, 2019-03, Vol.777, p.344-349

2019

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Surface plasmon enhanced GaAs thin film solar cells

Solar energy materials and solar cells, 2011-02, Vol.95 (2), p.693-698

2011

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Efficiency droop in InGaN/GaN multiple-quantum-well blue light-emitting diodes grown on free-standing GaN substrate

Applied physics letters, 2011-08, Vol.99 (9), p.091104-091104-3

2011

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AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency

Journal of crystal growth, 2014-06, Vol.395, p.9-13

2014

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Advances and prospects in nitrides based light-emitting-diodes

Journal of semiconductors, 2016-06, Vol.37 (6), p.1-14

李晋闽刘喆刘志强闫建昌魏同波伊晓燕王军喜

2016

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Improved Epitaxy of AlN Film for Deep‐Ultraviolet Light‐Emitting Diodes Enabled by Graphene

Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet light emitting diodes on nano-patterned sapphire substrate

Enhancement of Heat Dissipation in Ultraviolet Light‐Emitting Diodes by a Vertically Oriented Graphene Nanowall Buffer Layer

High‐Brightness Blue Light‐Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer

Influence of quantum confined Stark effect and carrier localization effect on modulation bandwidth for GaN-based LEDs

Fast Growth of Strain-Free AlN on Graphene-Buffered Sapphire

GaN/AlN quantum-disk nanorod 280 nm deep ultraviolet light emitting diodes by molecular beam epitaxy

Metal-assisted photochemical etching of GaN nanowires: The role of metal distribution

Gene expression-based immune infiltration analyses of renal cancer and their associations with survival outcome

Atomic‐Scale Mechanism of Spontaneous Polarity Inversion in AlN on Nonpolar Sapphire Substrate Grown by MOCVD

Enhancement of the light output power of InGaN/GaN light-emitting diodes grown on pyramidal patterned sapphire substrates in the micro- and nanoscale

Clinical value of combined serum CA125, NSE and 24-hour urine VMA for the prediction of recurrence in children with neuroblastoma

AlGaN Nanowires Grown on SiO2/Si (100) Using Graphene as a Buffer Layer

Light-Emitting Diodes: Materials, Processes, Devices and Applications

Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode

III-Nitride Deep UV LED Without Electron Blocking Layer

III-Nitrides Light Emitting Diodes: Technology and Applications

Effect of photonic crystals on the light extraction of GaN-based LED for different polarization modes of spontaneous radiation

Enhancing the spontaneous emission rate by modulating carrier distribution in GaN-based surface plasmon light-emitting diodes

Improving the Modulation Bandwidth of GaN‐Based Light‐Emitting Diodes for High‐Speed Visible Light Communication: Countermeasures and Challenges

Reducing stimulated emission threshold power density of AlGaN/AlN multiple quantum wells by nano-trench-patterned AlN template

Surface plasmon enhanced GaAs thin film solar cells

Efficiency droop in InGaN/GaN multiple-quantum-well blue light-emitting diodes grown on free-standing GaN substrate

AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency

Advances and prospects in nitrides based light-emitting-diodes

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