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Strained GaN quantum-well FETs on single crystal bulk AlN substrates

Applied physics letters, 2017-02, Vol.110 (6)

2017

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High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

Applied physics letters, 2015-12, Vol.107 (23)

2015

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Exploring the health information seeking behavior of social media users under the background of COVID-19 pandemic: An empirical study based on social cognitive theory

Frontiers in psychology, 2022-11, Vol.13, p.1045914-1045914

2022

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Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions

Applied physics letters, 2011-11, Vol.99 (19)

2011

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InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and f of 370 GHz

IEEE electron device letters, 2012-07, Vol.33 (7), p.988-990

2012

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IEEE_Xplore

Circ_0040039 May Aggravate Intervertebral Disk Degeneration by Regulating the MiR-874-3p-ESR1 Pathway

Frontiers in genetics, 2021-06, Vol.12, p.656759-656759

2021

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Two-dimensional electron gases in strained quantum wells for AlN/GaN/AlN double heterostructure field-effect transistors on AlN

Applied physics letters, 2014-05, Vol.104 (19)

2014

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MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 Ω · mm

IEEE electron device letters, 2012-04, Vol.33 (4), p.525-527

2012

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Polarization-Induced GaN-on-Insulator E/D Mode p-Channel Heterostructure FETs

IEEE electron device letters, 2013-07, Vol.34 (7), p.852-854

2013

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IEEE_Xplore

210-GHz InAlN/GaN HEMTs With Dielectric-Free Passivation

IEEE electron device letters, 2011-07, Vol.32 (7), p.892-894

2011

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IEEE_Xplore

Identification of circ-FAM169A sponges miR-583 involved in the regulation of intervertebral disc degeneration

Journal of orthopaedic translation, 2021-01, Vol.26, p.121-131

2021

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Analysis of the Anti-Tumour Effect of Xuefu Zhuyu Decoction Based on Network Pharmacology and Experimental Verification in Drosophila

Frontiers in pharmacology, 2022-07, Vol.13, p.922457-922457

2022

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Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy

Applied physics letters, 2012-07, Vol.101 (3)

2012

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Mining Trajectory Planning of Unmanned Excavator Based on Machine Learning

Mathematics (Basel), 2024-05, Vol.12 (9), p.1298

2024

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Quaternary Barrier InAlGaN HEMTs With f/f of 230/300 GHz

IEEE electron device letters, 2013-03, Vol.34 (3), p.378-380

2013

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IEEE_Xplore

MBE growth of high conductivity single and multiple AlN/GaN heterojunctions

Journal of crystal growth, 2011-05, Vol.323 (1), p.529-533

2011

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Polarization-engineering in group III-nitride heterostructures: New opportunities for device design

Physica status solidi. A, Applications and materials science, 2011-07, Vol.208 (7), p.1511-1516

2011

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220-GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs

IEEE electron device letters, 2011-09, Vol.32 (9), p.1215-1217

2011

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IEEE_Xplore

Threshold Voltage Control in Al0.72Ga0.28N/AlN/GaN HEMTs by Work-Function Engineering

IEEE electron device letters, 2010-09, Vol.31 (9), p.954-956

2010

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High mobility two-dimensional electron gases in nitride heterostructures with high Al composition AlGaN alloy barriers

Applied physics letters, 2010-11, Vol.97 (22), p.222110-222110-3

2010

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Ultrathin Body GaN-on-Insulator Quantum Well FETs With Regrown Ohmic Contacts

IEEE electron device letters, 2012-05, Vol.33 (5), p.661-663

2012

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IEEE_Xplore

Dual optical marker Raman characterization of strained GaN-channels on AlN using AlN/GaN/AlN quantum wells and 15N isotopes

Applied physics letters, 2015-01, Vol.106 (4)

2015

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Subcritical barrier AlN/GaN E/D-mode HFETs and inverters

Physica status solidi. A, Applications and materials science, 2011-07, Vol.208 (7), p.1620-1622

2011

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Metal-face InAlN/AlN/GaN high electron mobility transistors with regrown ohmic contacts by molecular beam epitaxy

Physica status solidi. A, Applications and materials science, 2011-07, Vol.208 (7), p.1617-1619

2011

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Polyimide covalent organic frameworks bearing star-shaped electron-deficient polycyclic aromatic hydrocarbon building blocks: molecular innovations for energy conversion and storage

Chemical communications (Cambridge, England), 2024-01, Vol.6 (7), p.793-83

2024

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Strained GaN quantum-well FETs on single crystal bulk AlN substrates

High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

Exploring the health information seeking behavior of social media users under the background of COVID-19 pandemic: An empirical study based on social cognitive theory

Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions

InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and f of 370 GHz

Circ_0040039 May Aggravate Intervertebral Disk Degeneration by Regulating the MiR-874-3p-ESR1 Pathway

Two-dimensional electron gases in strained quantum wells for AlN/GaN/AlN double heterostructure field-effect transistors on AlN

MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 Ω · mm

Polarization-Induced GaN-on-Insulator E/D Mode p-Channel Heterostructure FETs

210-GHz InAlN/GaN HEMTs With Dielectric-Free Passivation

Identification of circ-FAM169A sponges miR-583 involved in the regulation of intervertebral disc degeneration

Analysis of the Anti-Tumour Effect of Xuefu Zhuyu Decoction Based on Network Pharmacology and Experimental Verification in Drosophila

Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy

Mining Trajectory Planning of Unmanned Excavator Based on Machine Learning

Quaternary Barrier InAlGaN HEMTs With f/f of 230/300 GHz

MBE growth of high conductivity single and multiple AlN/GaN heterojunctions

Polarization-engineering in group III-nitride heterostructures: New opportunities for device design

220-GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs

Threshold Voltage Control in Al0.72Ga0.28N/AlN/GaN HEMTs by Work-Function Engineering

High mobility two-dimensional electron gases in nitride heterostructures with high Al composition AlGaN alloy barriers

Ultrathin Body GaN-on-Insulator Quantum Well FETs With Regrown Ohmic Contacts

Dual optical marker Raman characterization of strained GaN-channels on AlN using AlN/GaN/AlN quantum wells and 15N isotopes

Subcritical barrier AlN/GaN E/D-mode HFETs and inverters

Metal-face InAlN/AlN/GaN high electron mobility transistors with regrown ohmic contacts by molecular beam epitaxy

Polyimide covalent organic frameworks bearing star-shaped electron-deficient polycyclic aromatic hydrocarbon building blocks: molecular innovations for energy conversion and storage

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