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Impact of low-dose radiation on nitrided lateral 4H-SiC MOSFETs and the related mechanisms

Chinese physics B, 2023-04, Vol.32 (5), p.57305-723

2023

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Re-investigation of SiC/SiO2 interface passivation by nitrogen annealing

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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Investigation on permeability of ultra-thin screen wick with free surface using gravity flow and numerical simulation methods

International communications in heat and mass transfer, 2022-02, Vol.131, p.105879, Article 105879

2022

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Synthesis and biological evaluation of 3-substituted-indolin-2-one derivatives containing chloropyrrole moieties

Molecules (Basel, Switzerland), 2011-11, Vol.16 (11), p.9368-9385

2011

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High temperature 1 MHz capacitance-voltage method for evaluation of border traps in 4H-SiC MOS system

Journal of applied physics, 2018-04, Vol.123 (13)

2018

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Defects and electrical properties in Al-implanted 4H-SiC after activation annealing

Chinese physics B, 2019-10, Vol.28 (10), p.106101

2019

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Near-interface oxide traps in 4H-SiC MOS structures fabricated with and without annealing in NO

Chinese physics B, 2017-12, Vol.26 (12), p.560-565

2017

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An Investigation of Capacitance-Voltage Hysteresis in Al2O3/SiC MIS Capacitors

Materials science forum, 2015-06, Vol.821-823, p.516-519

2015

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Charge trapping behavior and its origin in Al2O3/SiC MIS system

中国物理B：英文版, 2015-08 (8), p.523-528

刘新宇王弋宇彭朝阳李诚瞻吴佳白云汤益丹刘可安申华军

2015

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Fabrication and Characterization of 1700 V 4H-SiC Vertical Double-Implanted Metal-Oxide-Semiconductor Field-Effect Transistors

Chinese physics letters, 2015-12, Vol.32 (12), p.109-112

申华军唐亚超彭朝阳邓小川白云王弋宇李诚瞻刘可安刘新宇

2015

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Numerical and experimental study of the mesa configuration in high-voltage 4H–SiC PiN rectifiers

Chinese physics B, 2016-08, Vol.25 (8), p.317-321

邓小川陈茜茜李诚瞻申华军张金平

2016

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Energy-band alignment of atomic layer deposited (HfO 2 ) x (Al 2 O 3 ) 1 − x gate dielectrics on 4H-SiC

Chinese physics B, 2015-03, Vol.24 (3), p.38103

2015

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Lucky China： Efficient Prevention from Middle East Respiratory Syndrome and its Beyond

Chinese medical journal, 2015-10, Vol.128 (20), p.2699-2700

2015

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Sixty cases with eyes injuries degree in forensic medicine

Fa yi xue za zhi, 2009-10, Vol.25 (5), p.368

2009

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Bronchopulmonary Lophomonas blattarum Infection： Still a Pending Issue

Chinese medical journal, 2017-01, Vol.130 (1), p.118-118

2017

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Development of high power SiC devices for rail traction power systems

Journal of crystal growth, 2019-02, Vol.507, p.442-452

2019

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Lophomonas blattarum Infection or Just the Movement o Ciliated Epithelial Cells

中华医学杂志：英文版, 2016 (6), p.739-742

Ran Li Zhan-Cheng Gao

2016

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Modeling and Dynamic Simulation of an Efficient Energy Storage Component- Supercapacitor

2010 Asia-Pacific Power and Energy Engineering Conference, 2010, p.1-4

2010

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Design and Optimization of Four-Region Multistep Field Limiting Rings for 10kV 4H-SiC IGBTs

2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2018, p.1-3

2018

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Design and Characterization of 10 kV High Voltage 4H-SiC p-Channel IGBTs with Low VF

Materials science forum, 2022-05, Vol.1062, p.435-441

2022

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μ Synthesis Control of Proton Exchange Membrane Fuel Cell Generation System Based on D-K Iteration Method

2010 Asia-Pacific Power and Energy Engineering Conference, 2010, p.1-4

2010

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Defects and electrical properties in Al-implanted 4H-SiC after activation annealing Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0100601)

Chinese physics B, 2019-10, Vol.28 (10)

2019

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High-Temperature Reliability Analysis of 1200V/100A 4H-SiC Junction Barrier Schottky Diodes

Materials science forum, 2020-07, Vol.1004, p.1004-1009

2020

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Improved electrical properties of NO-nitrided SiC/SiO2 interface after electron irradiationProject supported by the National Key Research and Development Program of China (Grant No. 2016YFB0100601) and the National Natural Science Foundation of China (Grant Nos. 61674169 and 61974159)

Chinese physics B, 2020-09, Vol.29 (9)

2020

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Improved electrical properties of NO-nitrided SiC/SiO 2 interface after electron irradiation

Chinese physics B, 2020-09, Vol.29 (9), p.97301

2020

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Impact of low-dose radiation on nitrided lateral 4H-SiC MOSFETs and the related mechanisms

Re-investigation of SiC/SiO2 interface passivation by nitrogen annealing

Investigation on permeability of ultra-thin screen wick with free surface using gravity flow and numerical simulation methods

Synthesis and biological evaluation of 3-substituted-indolin-2-one derivatives containing chloropyrrole moieties

High temperature 1 MHz capacitance-voltage method for evaluation of border traps in 4H-SiC MOS system

Defects and electrical properties in Al-implanted 4H-SiC after activation annealing

Near-interface oxide traps in 4H-SiC MOS structures fabricated with and without annealing in NO

An Investigation of Capacitance-Voltage Hysteresis in Al2O3/SiC MIS Capacitors

Charge trapping behavior and its origin in Al2O3/SiC MIS system

Fabrication and Characterization of 1700 V 4H-SiC Vertical Double-Implanted Metal-Oxide-Semiconductor Field-Effect Transistors

Numerical and experimental study of the mesa configuration in high-voltage 4H–SiC PiN rectifiers

Energy-band alignment of atomic layer deposited (HfO 2 ) x (Al 2 O 3 ) 1 − x gate dielectrics on 4H-SiC

Lucky China： Efficient Prevention from Middle East Respiratory Syndrome and its Beyond

Sixty cases with eyes injuries degree in forensic medicine

Bronchopulmonary Lophomonas blattarum Infection： Still a Pending Issue

Development of high power SiC devices for rail traction power systems

Lophomonas blattarum Infection or Just the Movement o Ciliated Epithelial Cells

Modeling and Dynamic Simulation of an Efficient Energy Storage Component- Supercapacitor

Design and Optimization of Four-Region Multistep Field Limiting Rings for 10kV 4H-SiC IGBTs

Design and Characterization of 10 kV High Voltage 4H-SiC p-Channel IGBTs with Low VF

μ Synthesis Control of Proton Exchange Membrane Fuel Cell Generation System Based on D-K Iteration Method

Defects and electrical properties in Al-implanted 4H-SiC after activation annealing Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0100601)

High-Temperature Reliability Analysis of 1200V/100A 4H-SiC Junction Barrier Schottky Diodes

Improved electrical properties of NO-nitrided SiC/SiO2 interface after electron irradiationProject supported by the National Key Research and Development Program of China (Grant No. 2016YFB0100601) and the National Natural Science Foundation of China (Grant Nos. 61674169 and 61974159)

Improved electrical properties of NO-nitrided SiC/SiO 2 interface after electron irradiation

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