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Growth of high quality InP layers in STI trenches on miscut Si (0 0 1) substrates

Journal of crystal growth, 2011, Vol.315 (1), p.32-36

2011

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Low-loss, compact, and polarization independent PHASAR demultiplexer fabricated by using a double-etch process

IEEE photonics technology letters, 2002-01, Vol.14 (1), p.62-64

2002

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A modified BCF model to quantitatively describe the (1 0 0)InP growth rate in chemical beam epitaxy

Journal of crystal growth, 1998-06, Vol.188 (1), p.11-16

1998

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A RHEED study of the dynamics of GaAs and AlGaAs growth on a (001) surface by MBE

Applied surface science, 1995-03, Vol.84 (3), p.299-307

1995

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Study of intrinsically carbon-doped AlGaAs layers for tunnel diodes in multi-junction solar cells

Journal of crystal growth, 2007, Vol.298, p.758-761

2007

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Influence of AlGaN nucleation layers on structural and electrical properties of GaN on 4H-SiC

Journal of crystal growth, 2004-12, Vol.272 (1), p.312-317

2004

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A MBE-grown high-efficiency GaAs solar cell with a directly deposited aluminum front contact

IEEE electron device letters, 1992-12, Vol.13 (12), p.618-620

1992

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Effect of growth interrupt and growth rate on MOVPE-grown InGaN/GaN MQW structures

Journal of crystal growth, 2003-02, Vol.248, p.498-502

2003

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Growth and characterization of strained layers of GaAsxP1−x

Journal of crystal growth, 1988, Vol.93 (1-4), p.504-511

1988

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Growth of multiple thin layer structures in the GaAs-AlAs system using a novel VPE reactor

Journal of crystal growth, 1984-09, Vol.68 (1), p.431-436

1984

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Fundamental growth kinetics in MOMBE/CBE, MBE and MOVPE

Journal of crystal growth, 2000-02, Vol.209 (2), p.225-231

Leys, M.R

2000

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Polarization independent dilated WDM cross-connect on InP

IEEE photonics technology letters, 1999-12, Vol.11 (12), p.1599-1601

1999

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The temperature dependence of [formula omitted] noise in InP

Solid-state electronics, 1997-09, Vol.41 (9), p.1269-1275

1997

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1/ f Noise in an Al xGa 1− xAs/GaAs heterostructure between 77 and 300 K

Physica. B, Condensed matter, 1993, Vol.192 (4), p.303-310

1993

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Morphology of homo-epitaxial vicinal (1 0 0) III–V surfaces

Journal of crystal growth, 1999-04, Vol.200 (1), p.19-31

1999

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A chopped quantum-well polarization-independent interferometric switch at 1.53 /spl mu/m

IEEE journal of quantum electronics, 2000-03, Vol.36 (3), p.317-324

2000

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A chopped quantum-well polarization-independent interferometric switch at 1.53 [mu]m

IEEE journal of quantum electronics, 2000-03, Vol.36 (3), p.317

2000

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Substitution of InP layers to InAs for strain compensation in [formula omitted] superlattices

Journal of crystal growth, 1996-07, Vol.164 (1), p.263-270

1996

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Butt-coupling loss of 0.1dB/interface in InP/InGaAs MQW waveguide-waveguide structures grown by selective area chemical beam epitaxy

Journal of crystal growth, 1998-06, Vol.188 (1-4), p.288-294

1998

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Butt-coupling loss of 0.1 dB/interface in InP/InGaAs MQW waveguide-waveguide structures grown by selective area chemical beam epitaxy

Journal of crystal growth, 1998-06, Vol.188 (1), p.288-294

1998

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A study of the growth mechanism of epitaxial GaAs as grown by the technique of metal organic vapour phase epitaxy

Journal of crystal growth, 1981-01, Vol.55 (1), p.145-153

1981

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XRD investigation of the relaxation of InAsP layers grown by CBE on (1 0 0) InP

Physica. E, Low-dimensional systems & nanostructures, 1998-07, Vol.2 (1), p.873-877

1998

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1/ f noise at room temperature in n-type GaAs grown by molecular beam epitaxy

Physica. B, Condensed matter, 1991-06, Vol.172 (3), p.319-323

1991

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Effects of tensile strain and substrate off-orientation on the growth of [formula omitted] multiple quantum well structures by CBE

Journal of crystal growth, 1997-05, Vol.175, p.1081-1086

1997

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Surface morphology of [formula omitted] in selective area growth by chemical beam epitaxy

Journal of crystal growth, 1997-01, Vol.170 (1-4), p.650-654

1997

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Growth of high quality InP layers in STI trenches on miscut Si (0 0 1) substrates

Low-loss, compact, and polarization independent PHASAR demultiplexer fabricated by using a double-etch process

A modified BCF model to quantitatively describe the (1 0 0)InP growth rate in chemical beam epitaxy

A RHEED study of the dynamics of GaAs and AlGaAs growth on a (001) surface by MBE

Study of intrinsically carbon-doped AlGaAs layers for tunnel diodes in multi-junction solar cells

Influence of AlGaN nucleation layers on structural and electrical properties of GaN on 4H-SiC

A MBE-grown high-efficiency GaAs solar cell with a directly deposited aluminum front contact

Effect of growth interrupt and growth rate on MOVPE-grown InGaN/GaN MQW structures

Growth and characterization of strained layers of GaAsxP1−x

Growth of multiple thin layer structures in the GaAs-AlAs system using a novel VPE reactor

Fundamental growth kinetics in MOMBE/CBE, MBE and MOVPE

Polarization independent dilated WDM cross-connect on InP

The temperature dependence of [formula omitted] noise in InP

1/ f Noise in an Al xGa 1− xAs/GaAs heterostructure between 77 and 300 K

Morphology of homo-epitaxial vicinal (1 0 0) III–V surfaces

A chopped quantum-well polarization-independent interferometric switch at 1.53 /spl mu/m

A chopped quantum-well polarization-independent interferometric switch at 1.53 [mu]m

Substitution of InP layers to InAs for strain compensation in [formula omitted] superlattices

Butt-coupling loss of 0.1dB/interface in InP/InGaAs MQW waveguide-waveguide structures grown by selective area chemical beam epitaxy

Butt-coupling loss of 0.1 dB/interface in InP/InGaAs MQW waveguide-waveguide structures grown by selective area chemical beam epitaxy

A study of the growth mechanism of epitaxial GaAs as grown by the technique of metal organic vapour phase epitaxy

XRD investigation of the relaxation of InAsP layers grown by CBE on (1 0 0) InP

1/ f noise at room temperature in n-type GaAs grown by molecular beam epitaxy

Effects of tensile strain and substrate off-orientation on the growth of [formula omitted] multiple quantum well structures by CBE

Surface morphology of [formula omitted] in selective area growth by chemical beam epitaxy

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