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AlGaInN laser diode technology for GHz high-speed visible light communication through plastic optical fiber and water

Optical engineering, 2016-02, Vol.55 (2), p.26112

2016

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AlGaN HEMTs on patterned resistive/conductive SiC templates

Journal of crystal growth, 2017-04, Vol.464, p.159-163

2017

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Application of a composite plasmonic substrate for the suppression of an electromagnetic mode leakage in InGaN laser diodes

Applied physics letters, 2009-12, Vol.95 (26)

2009

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Application of a composite plasmonic substrate for the suppressionof an electromagnetic mode leakage in InGaN laser diodes

Applied physics letters, 2009-12, Vol.95 (26), p.261108-261108-3

2009

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Applications of Single Frequency Blue Lasers

2019 21st International Conference on Transparent Optical Networks (ICTON), 2019, p.1-4

2019

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Blue Lasers for Optical Wireless Communications

2023 23rd International Conference on Transparent Optical Networks (ICTON), 2023, p.1-4

2023

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Blue lasers — the latest in 30 years of successes

III-Vs review, 2002, Vol.15 (2), p.42-44

Leszczynski, Mike

2002

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Comparison of Si, Sapphire, SiC, and GaN Substrates for HEMT Epitaxy

ECS transactions, 2013, Vol.50 (3), p.163-171

2013

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Comparison of Si, Sapphire, SiC, and GaN Substrates for HEMT Epitaxy

Meeting abstracts (Electrochemical Society), 2012-06, Vol.MA2012-02 (30), p.2536-2536

2012

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Continuous-wave operation of (Al,In)GaN distributed-feedback laser diodes with high-order notched gratings

Applied physics express, 2018-11, Vol.11 (11), p.112701

2018

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Degradation Mechanisms of InGaN Laser Diodes

Proceedings of the IEEE, 2010-07, Vol.98 (7), p.1214-1219

2010

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Development of the Nitride Laser Diode Arrays for Video and Movie Projectors

MRS advances, 2016-01, Vol.1 (2), p.103-108

2016

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Distributed Feedback Lasers for Quantum Cooling Applications

2020 22nd International Conference on Transparent Optical Networks (ICTON), 2020, p.1-4

2020

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Effect of doping of layers surrounding GaN/InGaN multiple quantum wells on their thermal stability

Materials science in semiconductor processing, 2023-11, Vol.166, p.107752, Article 107752

2023

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Effect of hydrogen during growth of quantum barriers on the properties of InGaN quantum wells

Journal of crystal growth, 2015-03, Vol.414, p.38-41

2015

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Elimination of trench defects and V-pits from InGaN/GaN structures

Applied physics letters, 2015-03, Vol.106 (10)

2015

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Fabrication and Characterization of Graphene Heterostructures with Nitride Semiconductors for High Frequency Vertical Transistors

Physica status solidi. A, Applications and materials science, 2018-05, Vol.215 (10), p.n/a

2018

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GaN Laser Diode Technology for Visible-Light Communications

Electronics (Basel), 2022-05, Vol.11 (9), p.1430

2022

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High frequency modulation of a 422 nm GaN laser diode

2013 15th International Conference on Transparent Optical Networks (ICTON), 2013, p.1-4

2013

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High-power laser structures grown on bulk GaN crystals

Journal of crystal growth, 2004-12, Vol.272 (1), p.274-277

2004

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High Quality Homoepitaxial GaN Grown by Molecular Beam Epitaxy with NH 3 on Surface Cracking

Japanese Journal of Applied Physics, 1997-12, Vol.36 (12B), p.L1634

1997

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High quality homoepitaxial GaN grown by molecular beam epitaxy with NH3 on surface cracking

Japanese journal of applied physics, 1997-12, Vol.36 (12B), p.L1634-L1636

1997

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Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition

Nanomaterials (Basel, Switzerland), 2021-12, Vol.11 (12), p.3316

2021

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Hydrogen diffusion in GaN:Mg and GaN:Si

Journal of alloys and compounds, 2018-05, Vol.747, p.354-358

2018

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The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs

Scientific reports, 2021-01, Vol.11 (1), p.2458-2458, Article 2458

2021

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AlGaInN laser diode technology for GHz high-speed visible light communication through plastic optical fiber and water

AlGaN HEMTs on patterned resistive/conductive SiC templates

Application of a composite plasmonic substrate for the suppression of an electromagnetic mode leakage in InGaN laser diodes

Application of a composite plasmonic substrate for the suppressionof an electromagnetic mode leakage in InGaN laser diodes

Applications of Single Frequency Blue Lasers

Blue Lasers for Optical Wireless Communications

Blue lasers — the latest in 30 years of successes

Comparison of Si, Sapphire, SiC, and GaN Substrates for HEMT Epitaxy

Comparison of Si, Sapphire, SiC, and GaN Substrates for HEMT Epitaxy

Continuous-wave operation of (Al,In)GaN distributed-feedback laser diodes with high-order notched gratings

Degradation Mechanisms of InGaN Laser Diodes

Development of the Nitride Laser Diode Arrays for Video and Movie Projectors

Distributed Feedback Lasers for Quantum Cooling Applications

Effect of doping of layers surrounding GaN/InGaN multiple quantum wells on their thermal stability

Effect of hydrogen during growth of quantum barriers on the properties of InGaN quantum wells

Elimination of trench defects and V-pits from InGaN/GaN structures

Fabrication and Characterization of Graphene Heterostructures with Nitride Semiconductors for High Frequency Vertical Transistors

GaN Laser Diode Technology for Visible-Light Communications

High frequency modulation of a 422 nm GaN laser diode

High-power laser structures grown on bulk GaN crystals

High Quality Homoepitaxial GaN Grown by Molecular Beam Epitaxy with NH 3 on Surface Cracking

High quality homoepitaxial GaN grown by molecular beam epitaxy with NH3 on surface cracking

Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition

Hydrogen diffusion in GaN:Mg and GaN:Si

The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs

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