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Synergistic effect between histidine phosphate complex and hazelnut shell for flammability reduction of low-smoke emission epoxy resin

Polymer degradation and stability, 2020-11, Vol.181, p.109292, Article 109292

2020

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Graded-index separate confinement heterostructure InGaN laser diodes

Applied physics letters, 2013-12, Vol.103 (26)

2013

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Electrically driven terahertz radiation of 2DEG plasmons in AlGaN/GaN structures at 110 K temperature

Applied physics letters, 2017-05, Vol.110 (20)

2017

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Electro-structural evolution and Schottky barrier height in annealed Au/Ni contacts onto p-GaN

Journal of applied physics, 2011-12, Vol.110 (12), p.123703-123703-7

2011

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Critical issues for interfaces to p-type SiC and GaN in power devices

Applied surface science, 2012-08, Vol.258 (21), p.8324-8333

2012

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Cavity suppression in nitride based superluminescent diodes

Journal of applied physics, 2012-04, Vol.111 (8), p.083106-083106-6

2012

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Degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals

Applied physics letters, 2006-05, Vol.88 (20), p.201111-201111-3

2006

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Role of the electron blocking layer in the low-temperature collapse of electroluminescence in nitride light-emitting diodes

Applied physics letters, 2007-03, Vol.90 (10)

2007

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Homogenous indium distribution in InGaN/GaN laser active structure grown by LP-MOCVD on bulk GaN crystal revealed by transmission electron microscopy and x-ray diffraction

Nanotechnology, 2007-11, Vol.18 (46), p.465707-465707 (9)

2007

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Effect of efficiency "droop" in violet and blue InGaN laser diodes

Applied physics letters, 2009-08, Vol.95 (7), p.071108-071108-3

2009

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Correlation between luminescence and compositional striations in InGaN layers grown on miscut GaN substrates

Applied physics letters, 2007-11, Vol.91 (21), p.211904-211904-3

2007

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Influence of GaN substrate miscut on the XRD quantification of plastic relaxation in InGaN

Acta materialia, 2024-09, Vol.276, p.120082, Article 120082

2024

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New approach to cathodoluminescence studies in application to InGaN/GaN laser diode degradation

Journal of microscopy (Oxford), 2009-11, Vol.236 (2), p.137-142

2009

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The influence of lattice parameter variation on microstructure of GaN single crystals

Journal of alloys and compounds, 2005-09, Vol.401 (1), p.261-264

2005

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Fabrication and properties of GaN-based lasers

Journal of crystal growth, 2008-08, Vol.310 (17), p.3979-3982

2008

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Role of dislocation-free GaN substrates in the growth of indium containing optoelectronic structures by plasma-assisted MBE

Journal of crystal growth, 2007-07, Vol.305 (2), p.346-354

2007

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Mechanism of yellow luminescence in GaN

Applied physics letters, 1995-10, Vol.67 (15), p.2188-2190

1995

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AlGaN/GaN HEMT structures on ammono bulk GaN substrate

Semiconductor science and technology, 2014-07, Vol.29 (7), p.75004

2014

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Anomalous temperature characteristics of single wide quantum well InGaN laser diode

Applied physics letters, 2006-02, Vol.88 (7), p.071121-071121-3

2006

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Laplace DLTS studies of the 0.25 eV electron trap properties in n-GaN

Semiconductor science and technology, 2021-03, Vol.36 (3), p.35014

2021

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A pressure-tuned blue-violet InGaN/GaN laser diode grown on bulk GaN crystal

Applied physics letters, 2004-02, Vol.84 (8), p.1236-1238

2004

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Electronic tuning of integrated blue-violet GaN tunable coupled-cavity laser

AIP advances, 2012-09, Vol.2 (3), p.032130-032130-7

2012

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Consequences of lateral and horizontal point defect diffusion through interfaces in green semiconductor lasers based on InAlGaN grown on substrates with different dislocation density

Acta crystallographica. Section A, Foundations and advances, 2023-08, Vol.79 (a2), p.C882-C882

2023

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Influence of substrate misorientation on properties of InGaN layers grown on freestanding GaN

Physica status solidi. C, 2008-05, Vol.5 (6), p.1485-1487

2008

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Fully-screened polarization-induced electric fields in blue∕violet InGaN∕GaN light-emitting devices grown on bulk GaN

Applied physics letters, 2005-07, Vol.87 (4)

2005

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Synergistic effect between histidine phosphate complex and hazelnut shell for flammability reduction of low-smoke emission epoxy resin

Graded-index separate confinement heterostructure InGaN laser diodes

Electrically driven terahertz radiation of 2DEG plasmons in AlGaN/GaN structures at 110 K temperature

Electro-structural evolution and Schottky barrier height in annealed Au/Ni contacts onto p-GaN

Critical issues for interfaces to p-type SiC and GaN in power devices

Cavity suppression in nitride based superluminescent diodes

Degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals

Role of the electron blocking layer in the low-temperature collapse of electroluminescence in nitride light-emitting diodes

Homogenous indium distribution in InGaN/GaN laser active structure grown by LP-MOCVD on bulk GaN crystal revealed by transmission electron microscopy and x-ray diffraction

Effect of efficiency "droop" in violet and blue InGaN laser diodes

Correlation between luminescence and compositional striations in InGaN layers grown on miscut GaN substrates

Influence of GaN substrate miscut on the XRD quantification of plastic relaxation in InGaN

New approach to cathodoluminescence studies in application to InGaN/GaN laser diode degradation

The influence of lattice parameter variation on microstructure of GaN single crystals

Fabrication and properties of GaN-based lasers

Role of dislocation-free GaN substrates in the growth of indium containing optoelectronic structures by plasma-assisted MBE

Mechanism of yellow luminescence in GaN

AlGaN/GaN HEMT structures on ammono bulk GaN substrate

Anomalous temperature characteristics of single wide quantum well InGaN laser diode

Laplace DLTS studies of the 0.25 eV electron trap properties in n-GaN

A pressure-tuned blue-violet InGaN/GaN laser diode grown on bulk GaN crystal

Electronic tuning of integrated blue-violet GaN tunable coupled-cavity laser

Consequences of lateral and horizontal point defect diffusion through interfaces in green semiconductor lasers based on InAlGaN grown on substrates with different dislocation density

Influence of substrate misorientation on properties of InGaN layers grown on freestanding GaN

Fully-screened polarization-induced electric fields in blue∕violet InGaN∕GaN light-emitting devices grown on bulk GaN

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