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Room-temperature operation of InAs quantum-dash lasers on InP [001]

IEEE photonics technology letters, 2001-08, Vol.13 (8), p.767-769

2001

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Modeling the Injection-Locked Behavior of a Quantum Dash Semiconductor Laser

IEEE journal of selected topics in quantum electronics, 2009-05, Vol.15 (3), p.563-571

2009

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Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well

Electronics letters, 1999-07, Vol.35 (14), p.1163

1999

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Gain and linewidth enhancement factor in InAs quantum-dot laser diodes

IEEE photonics technology letters, 1999-12, Vol.11 (12), p.1527-1529

1999

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High external feedback resistance of laterally loss-coupled distributed feedback quantum dot semiconductor lasers

IEEE photonics technology letters, 2003-11, Vol.15 (11), p.1504-1506

2003

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The influence of quantum-well composition on the performance of quantum dot lasers using InAs-InGaAs dots-in-a-well (DWELL) structures

IEEE journal of quantum electronics, 2000-11, Vol.36 (11), p.1272-1279

2000

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Modeling and Direct Electric-Field Measurements of Passively Mode-Locked Quantum-Dot Lasers

IEEE journal of selected topics in quantum electronics, 2009-05, Vol.15 (3), p.653-660

2009

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High-gain quantum-dot semiconductor optical amplifier for 1300 nm

IEEE journal of quantum electronics, 2003-11, Vol.39 (11), p.1409-1414

2003

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Optical gain and absorption of quantum dots measured using an alternative segmented contact method

IEEE journal of quantum electronics, 2006-07, Vol.42 (7), p.725-732

2006

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Nondegenerate four-wave mixing in quantum dot distributed feedback lasers

IEEE photonics technology letters, 2005-08, Vol.17 (8), p.1686-1688

2005

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Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers

IEEE journal of selected topics in quantum electronics, 2001-03, Vol.7 (2), p.135-142

2001

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Compact Optical Generation of Microwave Signals Using a Monolithic Quantum Dot Passively Mode-Locked Laser

IEEE photonics journal, 2009-10, Vol.1 (4), p.236-244

2009

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Linewidth study of InAs-InGaAs quantum dot distributed feedback lasers

IEEE photonics technology letters, 2004-10, Vol.16 (10), p.2206-2208

2004

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State filling in InAs quantum-dot laser structures

IEEE journal of quantum electronics, 2004-12, Vol.40 (12), p.1639-1645

2004

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150-nm tuning range in a grating-coupled external cavity quantum-dot laser

IEEE photonics technology letters, 2000-07, Vol.12 (7), p.759-761

2000

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Epitaxially-grown GaN junction field effect transistors

IEEE transactions on electron devices, 2000-03, Vol.47 (3), p.507-511

2000

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Tunable grating-coupled laser oscillation and spectral hole burning in an InAs quantum-dot laser diode

IEEE journal of quantum electronics, 2000-04, Vol.36 (4), p.479-485

2000

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Transmission Electron Microscopy-Based Analysis of Electrically Conductive Surface Defects in Large Area GaSb Homoepitaxial Diodes Grown Using Molecular Beam Epitaxy

Journal of electronic materials, 2014-04, Vol.43 (4), p.926-930

2014

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Frequency-resolved optical gating characterisation of passively modelocked quantum-dot laser

Electronics letters, 2008, Vol.44 (21), p.1255-1257

2008

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Optical characteristics of 1.24-μm InAs quantum-dot laser diodes

IEEE photonics technology letters, 1999-08, Vol.11 (8), p.931-933

1999

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Low-threshold current density 1.3-μm InAs quantum-dot lasers with the dots-in-a-well (DWELL) structure

IEEE photonics technology letters, 2000-06, Vol.12 (6), p.591-593

2000

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Low-threshold quantum dot lasers with 201 nm tuning range

Electronics letters, 2000-08, Vol.36 (18), p.1544-1545

2000

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Hybrid Integration of a Bowtie Slot Antenna and a Quantum Dot Mode-Locked Laser

IEEE antennas and wireless propagation letters, 2009, Vol.8, p.1337-1340

2009

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Strained-layer InGaAs-GaAs-AlGaAs lasers grown by molecular beam epitaxy for high-speed modulation

IEEE journal of quantum electronics, 1991-06, Vol.27 (6), p.1455-1462

1991

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Bandwidth enhancement of injection-locked 1.3 [micro sign]m quantum-dot DFB laser

Electronics letters, 2008, Vol.44 (15), p.904

2008

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Room-temperature operation of InAs quantum-dash lasers on InP [001]

Modeling the Injection-Locked Behavior of a Quantum Dash Semiconductor Laser

Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well

Gain and linewidth enhancement factor in InAs quantum-dot laser diodes

High external feedback resistance of laterally loss-coupled distributed feedback quantum dot semiconductor lasers

The influence of quantum-well composition on the performance of quantum dot lasers using InAs-InGaAs dots-in-a-well (DWELL) structures

Modeling and Direct Electric-Field Measurements of Passively Mode-Locked Quantum-Dot Lasers

High-gain quantum-dot semiconductor optical amplifier for 1300 nm

Optical gain and absorption of quantum dots measured using an alternative segmented contact method

Nondegenerate four-wave mixing in quantum dot distributed feedback lasers

Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers

Compact Optical Generation of Microwave Signals Using a Monolithic Quantum Dot Passively Mode-Locked Laser

Linewidth study of InAs-InGaAs quantum dot distributed feedback lasers

State filling in InAs quantum-dot laser structures

150-nm tuning range in a grating-coupled external cavity quantum-dot laser

Epitaxially-grown GaN junction field effect transistors

Tunable grating-coupled laser oscillation and spectral hole burning in an InAs quantum-dot laser diode

Transmission Electron Microscopy-Based Analysis of Electrically Conductive Surface Defects in Large Area GaSb Homoepitaxial Diodes Grown Using Molecular Beam Epitaxy

Frequency-resolved optical gating characterisation of passively modelocked quantum-dot laser

Optical characteristics of 1.24-μm InAs quantum-dot laser diodes

Low-threshold current density 1.3-μm InAs quantum-dot lasers with the dots-in-a-well (DWELL) structure

Low-threshold quantum dot lasers with 201 nm tuning range

Hybrid Integration of a Bowtie Slot Antenna and a Quantum Dot Mode-Locked Laser

Strained-layer InGaAs-GaAs-AlGaAs lasers grown by molecular beam epitaxy for high-speed modulation

Bandwidth enhancement of injection-locked 1.3 [micro sign]m quantum-dot DFB laser

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