UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Physica status solidi: March 16

Görlich

2021

Volltextzugriff (PDF)

Plasma enhanced chemical vapor deposition and characterization of boron nitride gate insulators on InP

Journal of applied physics, 1991-10, Vol.70 (8), p.4366-4370

1991

Volltextzugriff (PDF)

Preparation of boron nitride thin films by microwave plasma enhanced CVD, for semiconductor applications

Materials science & engineering. B, Solid-state materials for advanced technology, 1997-04, Vol.46 (1), p.101-104

1997

Volltextzugriff (PDF)

Why Parents Seek Care for Acute Illness in the Clinic or the ED: The Role of Health Literacy

Academic pediatrics, 2018-04, Vol.18 (3), p.289-296

2018

Volltextzugriff (PDF)

A modified method of side data analysis of deep level transient spectroscopy spectra

Journal of applied physics, 1996-02, Vol.79 (3), p.1468-1475

1996

Volltextzugriff (PDF)

Photoluminescence intensity study of n-InP diodes in the accumulation regime

Physica status solidi. A, Applied research, 1996-07, Vol.156 (1), p.87-92

1996

Volltextzugriff (PDF)

A method to correct for leakage current effects in deep level transient spectroscopy measurements on Schottky diodes

Journal of applied physics, 1993-09, Vol.74 (6), p.3936-3943

1993

Volltextzugriff (PDF)

New method of deep level transient spectroscopy analysis: a five emission rate method

Materials science & engineering. B, Solid-state materials for advanced technology, 1993-06, Vol.20 (1), p.214-220

1993

Volltextzugriff (PDF)

Interface state measurements by the DLS‐82E lock‐in spectrometer

Review of scientific instruments, 1995-08, Vol.66 (8), p.4283-4288

1995

Volltextzugriff (PDF)

Simulation of electrons irradiation damages to optimize the performance of IGBT

IEEE transactions on nuclear science, 1997-02, Vol.44 (1), p.14-19

1997

Volltextzugriff (PDF)

Experimental analysis of temperature dependence of deep-level capture cross-section properties at the Au oxidized InP interface

Journal of applied physics, 1991-05, Vol.69 (10), p.7159-7165

1991

Volltextzugriff (PDF)

Electrical properties of MIS structures with BN insulating layer

Diamond and related materials, 1998-06, Vol.7 (6), p.817-820

1998

Volltextzugriff (PDF)

Peak and side data analyses to measure deep levels by DLS-82E lock-in spectrometer

Materials science & engineering. B, Solid-state materials for advanced technology, 1995, Vol.32 (1), p.51-55

1995

Volltextzugriff (PDF)

Electrical properties of Au/Bn/InP MIS diodes

Journal of non-crystalline solids, 1995-07, Vol.187, p.409-414

1995

Volltextzugriff (PDF)

A numerical procedure to determine near midgap level defect parameters in Schottky diodes with significant leakage current densities

Review of scientific instruments, 1993-09, Vol.64 (9), p.2655-2660

1993

Volltextzugriff (PDF)

Plasma enhanced chemical vapour deposition of boron nitride onto InP

Thin solid films, 1994-04, Vol.241 (1), p.278-281

1994

Volltextzugriff (PDF)

Transport processes in Au/n-InP and Au/oxide/n-InP devices treated in oxygen multipolar plasma

Materials science & engineering. B, Solid-state materials for advanced technology, 1993-06, Vol.20 (1), p.157-161

1993

Volltextzugriff (PDF)

Characterization method for ionizing radiation degradation in power MOSFETs

IEEE transactions on nuclear science, 1995-12, Vol.42 (6), p.1622-1627

1995

Volltextzugriff (PDF)

Design of a high speed parallel encoder for convolutional codes

Microelectronics, 2004-02, Vol.35 (2), p.151-166

2004

Volltextzugriff (PDF)

Determination of interface state density on Au/Ta2O5/n-InP structures by different methods

Materials science & engineering. B, Solid-state materials for advanced technology, 1994-12, Vol.28 (1-3), p.416-420

1994

Volltextzugriff (PDF)

On the interface state distribution of BN on InP structures

Solid state communications, 1994, Vol.89 (6), p.549-551

1994

Volltextzugriff (PDF)

Practical methods to improve DLTS data smoothing

Physica status solidi. A, Applied research, 1996-08, Vol.156 (2), p.413-420

1996

Volltextzugriff (PDF)

Study of boron nitride gate insulators grown by low temperature plasma enhanced chemical vapor deposition on InP

Applied surface science, 1989-10, Vol.39 (1), p.135-140

1989

Volltextzugriff (PDF)

Photoluminescence characterization of structures obtained by multipolar plasma oxidation of InP

Materials science & engineering. B, Solid-state materials for advanced technology, 1993-06, Vol.20 (1), p.148-152

1993

Volltextzugriff (PDF)

Design of a selective digital filter using the decimation technique

Microelectronics, 2001-12, Vol.32 (12), p.991-994

2001

Volltextzugriff (PDF)

1 – 25 von 137

Menü

Weitere Dienste

Einstellungen

Physica status solidi: March 16

Plasma enhanced chemical vapor deposition and characterization of boron nitride gate insulators on InP

Preparation of boron nitride thin films by microwave plasma enhanced CVD, for semiconductor applications

Why Parents Seek Care for Acute Illness in the Clinic or the ED: The Role of Health Literacy

A modified method of side data analysis of deep level transient spectroscopy spectra

Photoluminescence intensity study of n-InP diodes in the accumulation regime

A method to correct for leakage current effects in deep level transient spectroscopy measurements on Schottky diodes

New method of deep level transient spectroscopy analysis: a five emission rate method

Interface state measurements by the DLS‐82E lock‐in spectrometer

Simulation of electrons irradiation damages to optimize the performance of IGBT

Experimental analysis of temperature dependence of deep-level capture cross-section properties at the Au oxidized InP interface

Electrical properties of MIS structures with BN insulating layer

Peak and side data analyses to measure deep levels by DLS-82E lock-in spectrometer

Electrical properties of Au/Bn/InP MIS diodes

A numerical procedure to determine near midgap level defect parameters in Schottky diodes with significant leakage current densities

Plasma enhanced chemical vapour deposition of boron nitride onto InP

Transport processes in Au/n-InP and Au/oxide/n-InP devices treated in oxygen multipolar plasma

Characterization method for ionizing radiation degradation in power MOSFETs

Design of a high speed parallel encoder for convolutional codes

Determination of interface state density on Au/Ta2O5/n-InP structures by different methods

On the interface state distribution of BN on InP structures

Practical methods to improve DLTS data smoothing

Study of boron nitride gate insulators grown by low temperature plasma enhanced chemical vapor deposition on InP

Photoluminescence characterization of structures obtained by multipolar plasma oxidation of InP

Design of a selective digital filter using the decimation technique

Suchergebnisse filtern