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Optically active quantum dots in monolayer WSe2

Nature nanotechnology, 2015-06, Vol.10 (6), p.491-496

2015

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Valley Zeeman effect in elementary optical excitations of monolayer WSe2

Nature physics, 2015-02, Vol.11 (2), p.141-147

2015

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Light-trapping plasmonic nanovoid arrays

Physical review. B, Condensed matter and materials physics, 2012-01, Vol.85 (3), Article 035301

2012

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Optically active quantum dots in monolayer WSe sub(2)

Nature nanotechnology, 2015-06, Vol.10 (6), p.491-496

2015

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Valley Zeeman effect in elementary optical excitations of monolayer WSe sub(2)

Nature physics, 2015-02, Vol.11 (2), p.141-147

2015

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Breakdown of High-Performance Monolayer MoS2 Transistors

ACS nano, 2012-11, Vol.6 (11), p.10070-10075

2012

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Single-Layer MoS2 Electronics

Accounts of chemical research, 2015-01, Vol.48 (1), p.100-110

2015

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MoS2 Transistors Operating at Gigahertz Frequencies

Nano letters, 2014-10, Vol.14 (10), p.5905-5911

2014

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Ultrasensitive photodetectors based on monolayer MoS2

Nature nanotechnology, 2013-07, Vol.8 (7), p.497

2013

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Thickness-dependent mobility in two-dimensional MoS₂ transistors

Nanoscale, 2015-04, Vol.7 (14), p.6255-6260

2015

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Correction to Breakdown of High-Performance Monolayer MoS 2 Transistors

ACS nano, 2013-04, Vol.7 (4), p.3730-3730

2013

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Breakdown of High-Performance Monolayer MoS 2 Transistors

ACS nano, 2012-11, Vol.6 (11), p.10070-10075

2012

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Breakdown of High-Performance Monolayer MoS sub(2) Transistors

ACS nano, 2012-01, Vol.6 (11), p.10070-10075-10070-10075

2012

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Single-Layer MoS 2 Electronics

Accounts of chemical research, 2015-01, Vol.48 (1), p.100-110

2015

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Single-Layer MoS sub(2) Electronics

Accounts of chemical research, 2015-01, Vol.48 (1), p.100-110

2015

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Thickness-dependent mobility in two-dimensional MoS2 transistorsElectronic supplementary information (ESI) available. See DOI: 10.1039/c4nr06331g

2015-03

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Thickness-dependent mobility in two-dimensional MoS sub(2) transistors

Nanoscale, 2015-03, Vol.7 (14), p.6255-6260

2015

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Thickness-dependent mobility in two-dimensional MoS 2 transistors

Nanoscale, 2015, Vol.7 (14), p.6255-6260

2015

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MoS 2 Transistors Operating at Gigahertz Frequencies

Nano letters, 2014-10, Vol.14 (10), p.5905-5911

2014

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MoS sub(2) Transistors Operating at Gigahertz Frequencies

Nano letters, 2014-01, Vol.14 (10), p.5905-5911

2014

Volltextzugriff (PDF)

Ultrasensitive photodetectors based on monolayer MoS sub(2)

Nature nanotechnology, 2013-07, Vol.8 (7), p.497-501

2013

Volltextzugriff (PDF)

Correction to Breakdown of High-Performance Monolayer MoS2 Transistors

ACS nano, 2013-04, Vol.7 (4), p.3730-3730

2013

Volltextzugriff (PDF)

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Optically active quantum dots in monolayer WSe2

Valley Zeeman effect in elementary optical excitations of monolayer WSe2

Light-trapping plasmonic nanovoid arrays

Optically active quantum dots in monolayer WSe sub(2)

Valley Zeeman effect in elementary optical excitations of monolayer WSe sub(2)

Breakdown of High-Performance Monolayer MoS2 Transistors

Single-Layer MoS2 Electronics

MoS2 Transistors Operating at Gigahertz Frequencies

Ultrasensitive photodetectors based on monolayer MoS2

Thickness-dependent mobility in two-dimensional MoS₂ transistors

Correction to Breakdown of High-Performance Monolayer MoS 2 Transistors

Breakdown of High-Performance Monolayer MoS 2 Transistors

Breakdown of High-Performance Monolayer MoS sub(2) Transistors

Single-Layer MoS 2 Electronics

Single-Layer MoS sub(2) Electronics

Thickness-dependent mobility in two-dimensional MoS2 transistorsElectronic supplementary information (ESI) available. See DOI: 10.1039/c4nr06331g

Thickness-dependent mobility in two-dimensional MoS sub(2) transistors

Thickness-dependent mobility in two-dimensional MoS 2 transistors

MoS 2 Transistors Operating at Gigahertz Frequencies

MoS sub(2) Transistors Operating at Gigahertz Frequencies

Ultrasensitive photodetectors based on monolayer MoS sub(2)

Correction to Breakdown of High-Performance Monolayer MoS2 Transistors

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