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Breakdown of High-Performance Monolayer MoS2 Transistors

ACS nano, 2012-11, Vol.6 (11), p.10070-10075

2012

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Optically active quantum dots in monolayer WSe2

Nature nanotechnology, 2015-06, Vol.10 (6), p.491-496

2015

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Valley Zeeman effect in elementary optical excitations of monolayer WSe2

Nature physics, 2015-02, Vol.11 (2), p.141-147

2015

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MoS2 Transistors Operating at Gigahertz Frequencies

Nano letters, 2014-10, Vol.14 (10), p.5905-5911

2014

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Single-Layer MoS2 Electronics

Accounts of chemical research, 2015-01, Vol.48 (1), p.100-110

2015

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Light-trapping plasmonic nanovoid arrays

Physical review. B, Condensed matter and materials physics, 2012-01, Vol.85 (3), Article 035301

2012

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Ultrasensitive photodetectors based on monolayer MoS2

Nature nanotechnology, 2013-07, Vol.8 (7), p.497-501

2013

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Thickness-dependent mobility in two-dimensional MoS₂ transistors

Nanoscale, 2015-04, Vol.7 (14), p.6255-6260

2015

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Ultrasensitive photodetectors based on monolayer MoS2

Nature nanotechnology, 2013-06, Vol.8 (7), p.497-501

2013

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Correction to Breakdown of High-Performance Monolayer MoS 2 Transistors

ACS nano, 2013-04, Vol.7 (4), p.3730-3730

2013

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Breakdown of High-Performance Monolayer MoS 2 Transistors

ACS nano, 2012-11, Vol.6 (11), p.10070-10075

2012

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Breakdown of High-Performance Monolayer MoS sub(2) Transistors

ACS nano, 2012-01, Vol.6 (11), p.10070-10075-10070-10075

2012

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Single-Layer MoS 2 Electronics

Accounts of chemical research, 2015-01, Vol.48 (1), p.100-110

2015

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Single-Layer MoS sub(2) Electronics

Accounts of chemical research, 2015-01, Vol.48 (1), p.100-110

2015

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Thickness-dependent mobility in two-dimensional MoS2 transistorsElectronic supplementary information (ESI) available. See DOI: 10.1039/c4nr06331g

2015-03

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Thickness-dependent mobility in two-dimensional MoS sub(2) transistors

Nanoscale, 2015-03, Vol.7 (14), p.6255-6260

2015

Volltextzugriff (PDF)

Thickness-dependent mobility in two-dimensional MoS 2 transistors

Nanoscale, 2015, Vol.7 (14), p.6255-6260

2015

Volltextzugriff (PDF)

Correction to Breakdown of High-Performance Monolayer MoS2 Transistors

ACS nano, 2013-04, Vol.7 (4), p.3730-3730

2013

Volltextzugriff (PDF)

MoS 2 Transistors Operating at Gigahertz Frequencies

Nano letters, 2014-10, Vol.14 (10), p.5905-5911

2014

Volltextzugriff (PDF)

MoS sub(2) Transistors Operating at Gigahertz Frequencies

Nano letters, 2014-01, Vol.14 (10), p.5905-5911

2014

Volltextzugriff (PDF)

Optically active quantum dots in monolayer WSe sub(2)

Nature nanotechnology, 2015-06, Vol.10 (6), p.491-496

2015

Volltextzugriff (PDF)

Valley Zeeman effect in elementary optical excitations of monolayer WSe sub(2)

Nature physics, 2015-02, Vol.11 (2), p.141-147

2015

Volltextzugriff (PDF)

Ultrasensitive photodetectors based on monolayer MoS sub(2)

Nature nanotechnology, 2013-07, Vol.8 (7), p.497-501

2013

Volltextzugriff (PDF)

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Breakdown of High-Performance Monolayer MoS2 Transistors

Optically active quantum dots in monolayer WSe2

Valley Zeeman effect in elementary optical excitations of monolayer WSe2

MoS2 Transistors Operating at Gigahertz Frequencies

Single-Layer MoS2 Electronics

Light-trapping plasmonic nanovoid arrays

Ultrasensitive photodetectors based on monolayer MoS2

Thickness-dependent mobility in two-dimensional MoS₂ transistors

Ultrasensitive photodetectors based on monolayer MoS2

Correction to Breakdown of High-Performance Monolayer MoS 2 Transistors

Breakdown of High-Performance Monolayer MoS 2 Transistors

Breakdown of High-Performance Monolayer MoS sub(2) Transistors

Single-Layer MoS 2 Electronics

Single-Layer MoS sub(2) Electronics

Thickness-dependent mobility in two-dimensional MoS2 transistorsElectronic supplementary information (ESI) available. See DOI: 10.1039/c4nr06331g

Thickness-dependent mobility in two-dimensional MoS sub(2) transistors

Thickness-dependent mobility in two-dimensional MoS 2 transistors

Correction to Breakdown of High-Performance Monolayer MoS2 Transistors

MoS 2 Transistors Operating at Gigahertz Frequencies

MoS sub(2) Transistors Operating at Gigahertz Frequencies

Optically active quantum dots in monolayer WSe sub(2)

Valley Zeeman effect in elementary optical excitations of monolayer WSe sub(2)

Ultrasensitive photodetectors based on monolayer MoS sub(2)

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