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Thermal Selective Vapor Etching of TiO2: Chemical Vapor Etching via WF6 and Self-Limiting Atomic Layer Etching Using WF6 and BCl3

Chemistry of materials, 2017-08, Vol.29 (16), p.6653-6665

2017

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Facile Conversion of Hydroxy Double Salts to Metal–Organic Frameworks Using Metal Oxide Particles and Atomic Layer Deposition Thin-Film Templates

Journal of the American Chemical Society, 2015-11, Vol.137 (43), p.13756-13759

2015

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Highly Adsorptive, MOF‐Functionalized Nonwoven Fiber Mats for Hazardous Gas Capture Enabled by Atomic Layer Deposition

Advanced materials interfaces, 2014-07, Vol.1 (4), p.np-n/a

2014

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Understanding inherent substrate selectivity during atomic layer deposition: Effect of surface preparation, hydroxyl density, and metal oxide composition on nucleation mechanisms during tungsten ALD

The Journal of chemical physics, 2017-02, Vol.146 (5), p.052811-052811

2017

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Reversible Low-Temperature Metal Node Distortion during Atomic Layer Deposition of Al2O3 and TiO2 on UiO-66-NH2 Metal–Organic Framework Crystal Surfaces

ACS applied materials & interfaces, 2017-07, Vol.9 (26), p.22042-22054

2017

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Thermally Driven Self-Limiting Atomic Layer Etching of Metallic Tungsten Using WF6 and O2

ACS applied materials & interfaces, 2018-03, Vol.10 (10), p.9147-9154

2018

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Extending growth inhibition during area-selective atomic layer deposition of Al2O3 on aminosilane-functionalized SiO2

Chemical communications (Cambridge, England), 2022-06, Vol.58 (46), p.6650-6652

2022

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Extending growth inhibition during area-selective atomic layer deposition of Al 2 O 3 on aminosilane-functionalized SiO 2

Chemical communications (Cambridge, England), 2022-06, Vol.58 (46), p.6650-6652

2022

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Functionalization of the SiO2 Surface with Aminosilanes to Enable Area-Selective Atomic Layer Deposition of Al2O3

Langmuir, 2022-01, Vol.38 (2), p.652-660

2022

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Using Hydrogen To Expand the Inherent Substrate Selectivity Window During Tungsten Atomic Layer Deposition

Chemistry of materials, 2016-01, Vol.28 (1), p.117-126

2016

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Functionalization of the SiO 2 Surface with Aminosilanes to Enable Area-Selective Atomic Layer Deposition of Al 2 O 3

Langmuir, 2022-01, Vol.38 (2), p.652-660

2022

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Relation between Reactive Surface Sites and Precursor Choice for Area-Selective Atomic Layer Deposition Using Small Molecule Inhibitors

Journal of physical chemistry. C, 2022-03, Vol.126 (10), p.4845-4853

2022

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Conformal and highly adsorptive metal–organic framework thin films via layer-by-layer growth on ALD-coated fiber mats

Journal of materials chemistry. A, Materials for energy and sustainability, 2015-01, Vol.3 (4), p.1458-1464

2015

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Thermally Driven Self-Limiting Atomic Layer Etching of Metallic Tungsten Using WF 6 and O 2

ACS applied materials & interfaces, 2018-03, Vol.10 (10), p.9147-9154

2018

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Copper Benzenetricarboxylate Metal–Organic Framework Nucleation Mechanisms on Metal Oxide Powders and Thin Films formed by Atomic Layer Deposition

ACS applied materials & interfaces, 2016-04, Vol.8 (14), p.9514-9522

2016

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Reversible Low-Temperature Metal Node Distortion during Atomic Layer Deposition of Al 2 O 3 and TiO 2 on UiO-66-NH 2 Metal-Organic Framework Crystal Surfaces

ACS applied materials & interfaces, 2017-07, Vol.9 (26), p.22042-22054

2017

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Wafer-Scale Selective-Area Deposition of Nanoscale Metal Oxide Features Using Vapor Saturation into Patterned Poly(methyl methacrylate) Templates

Advanced materials interfaces, 2016-01, Vol.3 (2), p.np-n/a

2016

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Wafer‐Scale Selective‐Area Deposition of Nanoscale Metal Oxide Features Using Vapor Saturation into Patterned Poly(methyl methacrylate) Templates

Advanced materials interfaces, 2017-02, Vol.4 (4), p.n/a

2017

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Thermal Selective Vapor Etching of TiO 2 : Chemical Vapor Etching via WF 6 and Self-Limiting Atomic Layer Etching Using WF 6 and BCl 3

Chemistry of materials, 2017-08, Vol.29 (16), p.6653-6665

2017

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Mechanism for growth initiation on aminosilane-functionalized SiO2 during area-selective atomic layer deposition of ZrO2

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2021-05, Vol.39 (3)

2021

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Area-selective atomic layer deposition of Al2O3 on SiNx with SiO2 as the nongrowth surface

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2022-01, Vol.40 (1)

2022

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Ultraviolet photo-enhanced atomic layer deposition for improving dielectric properties of low temperature deposited Al2O3

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2022-07, Vol.40 (4)

2022

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Blocking mechanisms in area-selective ALD by small molecule inhibitors of different sizes: Steric shielding versus chemical passivation

Applied surface science, 2024-08, Vol.665, p.160141, Article 160141

2024

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Surface reaction mechanisms during atomic layer deposition of zirconium oxide using water, ethanol, and water-ethanol mixture as the oxygen sources

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2020-01, Vol.38 (1)

2020

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Area-selective atomic layer deposition of Al2O3 on SiN x with SiO2 as the nongrowth surface

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2022-01, Vol.40 (1)

2022

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Thermal Selective Vapor Etching of TiO2: Chemical Vapor Etching via WF6 and Self-Limiting Atomic Layer Etching Using WF6 and BCl3

Facile Conversion of Hydroxy Double Salts to Metal–Organic Frameworks Using Metal Oxide Particles and Atomic Layer Deposition Thin-Film Templates

Highly Adsorptive, MOF‐Functionalized Nonwoven Fiber Mats for Hazardous Gas Capture Enabled by Atomic Layer Deposition

Understanding inherent substrate selectivity during atomic layer deposition: Effect of surface preparation, hydroxyl density, and metal oxide composition on nucleation mechanisms during tungsten ALD

Reversible Low-Temperature Metal Node Distortion during Atomic Layer Deposition of Al2O3 and TiO2 on UiO-66-NH2 Metal–Organic Framework Crystal Surfaces

Thermally Driven Self-Limiting Atomic Layer Etching of Metallic Tungsten Using WF6 and O2

Extending growth inhibition during area-selective atomic layer deposition of Al2O3 on aminosilane-functionalized SiO2

Extending growth inhibition during area-selective atomic layer deposition of Al 2 O 3 on aminosilane-functionalized SiO 2

Functionalization of the SiO2 Surface with Aminosilanes to Enable Area-Selective Atomic Layer Deposition of Al2O3

Using Hydrogen To Expand the Inherent Substrate Selectivity Window During Tungsten Atomic Layer Deposition

Functionalization of the SiO 2 Surface with Aminosilanes to Enable Area-Selective Atomic Layer Deposition of Al 2 O 3

Relation between Reactive Surface Sites and Precursor Choice for Area-Selective Atomic Layer Deposition Using Small Molecule Inhibitors

Conformal and highly adsorptive metal–organic framework thin films via layer-by-layer growth on ALD-coated fiber mats

Thermally Driven Self-Limiting Atomic Layer Etching of Metallic Tungsten Using WF 6 and O 2

Copper Benzenetricarboxylate Metal–Organic Framework Nucleation Mechanisms on Metal Oxide Powders and Thin Films formed by Atomic Layer Deposition

Reversible Low-Temperature Metal Node Distortion during Atomic Layer Deposition of Al 2 O 3 and TiO 2 on UiO-66-NH 2 Metal-Organic Framework Crystal Surfaces

Wafer-Scale Selective-Area Deposition of Nanoscale Metal Oxide Features Using Vapor Saturation into Patterned Poly(methyl methacrylate) Templates

Wafer‐Scale Selective‐Area Deposition of Nanoscale Metal Oxide Features Using Vapor Saturation into Patterned Poly(methyl methacrylate) Templates

Thermal Selective Vapor Etching of TiO 2 : Chemical Vapor Etching via WF 6 and Self-Limiting Atomic Layer Etching Using WF 6 and BCl 3

Mechanism for growth initiation on aminosilane-functionalized SiO2 during area-selective atomic layer deposition of ZrO2

Area-selective atomic layer deposition of Al2O3 on SiNx with SiO2 as the nongrowth surface

Ultraviolet photo-enhanced atomic layer deposition for improving dielectric properties of low temperature deposited Al2O3

Blocking mechanisms in area-selective ALD by small molecule inhibitors of different sizes: Steric shielding versus chemical passivation

Surface reaction mechanisms during atomic layer deposition of zirconium oxide using water, ethanol, and water-ethanol mixture as the oxygen sources

Area-selective atomic layer deposition of Al2O3 on SiN x with SiO2 as the nongrowth surface

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