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Analisis Kesalahan Penggunaan Pedoman Ejaan Bahasa Indonesia (PUEBI) Pada Tugas Makalah dan Laporan Praktikum Mahasiswa IT Telkom Purwokerto

JP-BSI (Jurnal Pendidikan Bahasa dan Sastra Indonesia) (Online), 2019-09, Vol.4 (2), p.116

Leksono, M Lukman

2019

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Virtual simulation instructional training for students' drop out of mathematical science digital entrepreneurs

Journal of physics. Conference series, 2019-03, Vol.1188 (1), p.12085

2019

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Study of defect states in GaN films by photoconductivity measurement

Applied physics letters, 1995-05, Vol.66 (20), p.2712-2714

1995

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Mathematical analysis of intermittent gas injection model in oil production

AIP Conference Proceedings, 2016, Vol.1716 (1)

2016

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Performance Comparison of FBMC-OQAM and CP-OFDM Using AWGN Channel

Jurnal nasional teknik elektro, 2023-03

2023

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Cathodoluminescence study of erbium and oxygen coimplanted gallium nitride thin films on sapphire substrates

Applied physics letters, 1995-01, Vol.66 (5), p.562-564

1995

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Interfacial effects during GaN growth on 6H-SiC

Journal of electronic materials, 1999-03, Vol.28 (3), p.234-239

1999

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From Farm to Classroom: Tubers as Key Resources in Developing Biology Learning Media Rooted in Banten's Local Culture

Jurnal Pendidikan IPA Indonesia, 2023-12, Vol.12 (4)

2023

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Problematika Masyarakat Modern dalam Kumpulan Cerpen Tawa Gadis Padang Sampah Karya Ahmad Tohari

Jurnal Kajian Bahasa, Sastra dan Pengajaran (KIBASP), 2021-01, Vol.4 (2), p.147-159

2021

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Characterization of GaN Grown on SiC on Si/SiO2/Si by Metalorganic Chemical Vapor Deposition

Journal of materials research, 1999-04, Vol.14 (4), p.1171-1174

1999

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Photocurrent decay in n -type GaN thin films

Applied physics letters, 1996-08, Vol.69 (9), p.1282-1284

1996

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Analisis dan Perancangan Aquascape menggunakan Protokol MQTT untuk Media Pengiriman Data Suhu dan pH

Journal of Telecommunication, Electronics, and Control Engineering (JTECE), 2022-06, Vol.4 (1), p.1-14

2022

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Transmission Electron Microscopy Study of GaN on SiC on SIMOX Grown by Metalorganic Chemical Vapor Deposition

Materials science forum, 1998-01, Vol.264-268, p.1239-1242

1998

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Electrical characterization of GaN/SiC n-p heterojunction diodes

Applied physics letters, 1998-03, Vol.72 (11), p.1371-1373

1998

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Optical characterization of GaN/SiC n-p heterojunctions and p-SiC

Applied physics letters, 1998-02, Vol.72 (8), p.945-947

1998

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Effect of boron doping on the surfaces of diamond thin films

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1993-05, Vol.11 (3), p.569-573

1993

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Annealing Study of Erbium and Oxygen Implanted Gallium Nitride

MRS proceedings, 1996, Vol.422, Article 199

1996

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High-Power High-Temperature Heterobipolar TransistorWith Gallium Nitride Emitter

MRS Internet journal of nitride semiconductor research, 1996, Vol.1, Article e39

1996

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Email client application with rabbit algorithm for Android smart phone

2012 7th International Conference on Telecommunication Systems, Services, and Applications (TSSA), 2012, p.130-135

2012

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Infrared Luminescence from MOCVD Gan

MRS proceedings, 1994, Vol.339, Article 559

1994

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Characterization of GaN Grown on SiC on Si/SiO 2 /Si by Metalorganic Chemical Vapor Deposition

Journal of materials research, 1999-04, Vol.14 (4), p.1171-1174

1999

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A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C

MRS Internet journal of nitride semiconductor research, 1999, Vol.4 (1), Article e3

1999

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Effects of X-ray and γ-ray Irradiation on GaN

MRS proceedings, 1996, Vol.449, Article 585

1996

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A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300DGC

MRS Internet journal of nitride semiconductor research, 1999-01, Vol.4, p.1-1

1999

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Tem Study of Interfaces And Defects in Mocvd-Grown Gan on Sic on Simox

MRS proceedings, 1997, Vol.482, Article 471

1997

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Analisis Kesalahan Penggunaan Pedoman Ejaan Bahasa Indonesia (PUEBI) Pada Tugas Makalah dan Laporan Praktikum Mahasiswa IT Telkom Purwokerto

Virtual simulation instructional training for students' drop out of mathematical science digital entrepreneurs

Study of defect states in GaN films by photoconductivity measurement

Mathematical analysis of intermittent gas injection model in oil production

Performance Comparison of FBMC-OQAM and CP-OFDM Using AWGN Channel

Cathodoluminescence study of erbium and oxygen coimplanted gallium nitride thin films on sapphire substrates

Interfacial effects during GaN growth on 6H-SiC

From Farm to Classroom: Tubers as Key Resources in Developing Biology Learning Media Rooted in Banten's Local Culture

Problematika Masyarakat Modern dalam Kumpulan Cerpen Tawa Gadis Padang Sampah Karya Ahmad Tohari

Characterization of GaN Grown on SiC on Si/SiO2/Si by Metalorganic Chemical Vapor Deposition

Photocurrent decay in n -type GaN thin films

Analisis dan Perancangan Aquascape menggunakan Protokol MQTT untuk Media Pengiriman Data Suhu dan pH

Transmission Electron Microscopy Study of GaN on SiC on SIMOX Grown by Metalorganic Chemical Vapor Deposition

Electrical characterization of GaN/SiC n-p heterojunction diodes

Optical characterization of GaN/SiC n-p heterojunctions and p-SiC

Effect of boron doping on the surfaces of diamond thin films

Annealing Study of Erbium and Oxygen Implanted Gallium Nitride

High-Power High-Temperature Heterobipolar TransistorWith Gallium Nitride Emitter

Email client application with rabbit algorithm for Android smart phone

Infrared Luminescence from MOCVD Gan

Characterization of GaN Grown on SiC on Si/SiO 2 /Si by Metalorganic Chemical Vapor Deposition

A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C

Effects of X-ray and γ-ray Irradiation on GaN

A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300DGC

Tem Study of Interfaces And Defects in Mocvd-Grown Gan on Sic on Simox

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