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Conditional deletion of Nedd4-2 in lung epithelial cells causes progressive pulmonary fibrosis in adult mice

Nature communications, 2020-04, Vol.11 (1), p.2012-2012, Article 2012

2020

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Congenital Deletion of Nedd4-2 in Lung Epithelial Cells Causes Progressive Alveolitis and Pulmonary Fibrosis in Neonatal Mice

International journal of molecular sciences, 2021-06, Vol.22 (11), p.6146

2021

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Linking Fibrotic Remodeling and Ultrastructural Alterations of Alveolar Epithelial Cells after Deletion of Nedd4-2

International journal of molecular sciences, 2021-07, Vol.22 (14), p.7607

2021

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Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers

Journal of applied physics, 2003-01, Vol.93 (1), p.362-367

2003

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Carrier mobilities and process stability of strained Si n- and p-MOSFETs on SiGe virtual substrates

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2001-11, Vol.19 (6), p.2268-2279

2001

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Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal–oxide–semiconductor field-effect transistors

Journal of applied physics, 2002-10, Vol.92 (7), p.3745-3751

2002

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Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing

Applied physics letters, 1998-04, Vol.72 (14), p.1718-1720

1998

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Strained Ge channel p -type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates

Applied physics letters, 2001-11, Vol.79 (20), p.3344-3346

2001

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Characterization of transient and progressive pulmonary fibrosis by spatially correlated phase contrast microCT, classical histopathology and atomic force microscopy

Computers in biology and medicine, 2024-02, Vol.169, p.107947-107947, Article 107947

2024

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Crack formation in GaAs heteroepitaxial films on Si and SiGe virtual substrates

Journal of applied physics, 2003-04, Vol.93 (7), p.3859-3865

2003

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High quality Ge on Si by epitaxial necking

Applied physics letters, 2000-06, Vol.76 (25), p.3700-3702

2000

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Film thickness constraints for manufacturable strained silicon CMOS

Semiconductor science and technology, 2004-01, Vol.19 (1), p.L4-L8

2004

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Electron mobility enhancement in strained-Si n-MOSFETs fabricated on SiGe-on-insulator (SGOI) substrates

IEEE electron device letters, 2001-07, Vol.22 (7), p.321-323

2001

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Hole mobility enhancements in strained Si/Si1−yGey p -type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1−xGex (x<y) virtual substrates

Applied physics letters, 2001-12, Vol.79 (25), p.4246-4248

2001

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Dislocation glide and blocking kinetics in compositionally graded SiGe/Si

Journal of applied physics, 2001-09, Vol.90 (6), p.2730-2736

2001

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Single-junction InGaP/GaAs solar cells grown on Si substrates with SiGe buffer layers

Progress in photovoltaics, 2002-09, Vol.10 (6), p.417-426

2002

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High conductance Ge p-channel heterostructures realized by hybrid epitaxial growth

Semiconductor science and technology, 2004-10, Vol.19 (10), p.L106-L109

2004

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Optimized measurement of strained Si thickness and SiGe virtual substrate composition by spectroscopic ellipsometry

Thin solid films, 2006-08, Vol.513 (1), p.78-83

2006

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Influence of high channel doping on the inversion layer electron mobility in strained silicon n-MOSFETs

IEEE electron device letters, 2003-04, Vol.24 (4), p.248-250

2003

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Fully depleted n-MOSFETs on supercritical thickness strained SOI

IEEE electron device letters, 2004-02, Vol.25 (2), p.83-85

2004

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Direct regrowth of thin strained silicon films on planarized relaxed silicon–germanium virtual substrates

Thin solid films, 2006-08, Vol.513 (1), p.300-306

2006

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Computed Tomography Dose Assessment - A Practical Approach

Radiation protection dosimetry, 1995-01, Vol.57 (1-4), p.377-380

1995

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Unsolved or unsolvable problems with diagnostic reference levels

Radiation protection dosimetry, 2005-01, Vol.114 (1-3), p.180-182

2005

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Radiation risk and mammographic screening of women from 40 to 49 years of age: effect on breast cancer rates and years of life

British journal of cancer, 2000-01, Vol.82 (1), p.220-226

2000

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Reference (Target) Levels for Mammography in Sweden

Radiation protection dosimetry, 1998-11, Vol.80 (1-3), p.181-182

LEITZ, W

1998

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Conditional deletion of Nedd4-2 in lung epithelial cells causes progressive pulmonary fibrosis in adult mice

Congenital Deletion of Nedd4-2 in Lung Epithelial Cells Causes Progressive Alveolitis and Pulmonary Fibrosis in Neonatal Mice

Linking Fibrotic Remodeling and Ultrastructural Alterations of Alveolar Epithelial Cells after Deletion of Nedd4-2

Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers

Carrier mobilities and process stability of strained Si n- and p-MOSFETs on SiGe virtual substrates

Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal–oxide–semiconductor field-effect transistors

Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing

Strained Ge channel p -type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates

Characterization of transient and progressive pulmonary fibrosis by spatially correlated phase contrast microCT, classical histopathology and atomic force microscopy

Crack formation in GaAs heteroepitaxial films on Si and SiGe virtual substrates

High quality Ge on Si by epitaxial necking

Film thickness constraints for manufacturable strained silicon CMOS

Electron mobility enhancement in strained-Si n-MOSFETs fabricated on SiGe-on-insulator (SGOI) substrates

Hole mobility enhancements in strained Si/Si1−yGey p -type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1−xGex (x<y) virtual substrates

Dislocation glide and blocking kinetics in compositionally graded SiGe/Si

Single-junction InGaP/GaAs solar cells grown on Si substrates with SiGe buffer layers

High conductance Ge p-channel heterostructures realized by hybrid epitaxial growth

Optimized measurement of strained Si thickness and SiGe virtual substrate composition by spectroscopic ellipsometry

Influence of high channel doping on the inversion layer electron mobility in strained silicon n-MOSFETs

Fully depleted n-MOSFETs on supercritical thickness strained SOI

Direct regrowth of thin strained silicon films on planarized relaxed silicon–germanium virtual substrates

Computed Tomography Dose Assessment - A Practical Approach

Unsolved or unsolvable problems with diagnostic reference levels

Radiation risk and mammographic screening of women from 40 to 49 years of age: effect on breast cancer rates and years of life

Reference (Target) Levels for Mammography in Sweden

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