UB Paderborn / Katalog / Suche / in CDI

Carrier mobilities and process stability of strained Si n- and p-MOSFETs on SiGe virtual substrates

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2001-11, Vol.19 (6), p.2268-2279

2001

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Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal–oxide–semiconductor field-effect transistors

Journal of applied physics, 2002-10, Vol.92 (7), p.3745-3751

2002

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Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing

Applied physics letters, 1998-04, Vol.72 (14), p.1718-1720

1998

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Strained Ge channel p -type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates

Applied physics letters, 2001-11, Vol.79 (20), p.3344-3346

2001

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Film thickness constraints for manufacturable strained silicon CMOS

Semiconductor science and technology, 2004-01, Vol.19 (1), p.L4-L8

2004

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Crack formation in GaAs heteroepitaxial films on Si and SiGe virtual substrates

Journal of applied physics, 2003-04, Vol.93 (7), p.3859-3865

2003

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High quality Ge on Si by epitaxial necking

Applied physics letters, 2000-06, Vol.76 (25), p.3700-3702

2000

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Hole mobility enhancements in strained Si/Si1−yGey p -type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1−xGex (x<y) virtual substrates

Applied physics letters, 2001-12, Vol.79 (25), p.4246-4248

2001

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Single-junction InGaP/GaAs solar cells grown on Si substrates with SiGe buffer layers

Progress in photovoltaics, 2002-09, Vol.10 (6), p.417-426

2002

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Dislocation glide and blocking kinetics in compositionally graded SiGe/Si

Journal of applied physics, 2001-09, Vol.90 (6), p.2730-2736

2001

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High conductance Ge p-channel heterostructures realized by hybrid epitaxial growth

Semiconductor science and technology, 2004-10, Vol.19 (10), p.L106-L109

2004

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Optimized measurement of strained Si thickness and SiGe virtual substrate composition by spectroscopic ellipsometry

Thin solid films, 2006-08, Vol.513 (1), p.78-83

2006

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Comparison of arsenic and phosphorus diffusion behavior in silicon–germanium alloys

Applied physics letters, 2002-03, Vol.80 (10), p.1743-1745

2002

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Fully depleted n-MOSFETs on supercritical thickness strained SOI

IEEE electron device letters, 2004-02, Vol.25 (2), p.83-85

2004

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Direct regrowth of thin strained silicon films on planarized relaxed silicon–germanium virtual substrates

Thin solid films, 2006-08, Vol.513 (1), p.300-306

2006

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Monolithic integration of III-V optical interconnects on Si using SiGe virtual substrates

Journal of materials science. Materials in electronics, 2002-07, Vol.13 (7), p.377-380

2002

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Electron mobility enhancement in strained-Si n-MOSFETs fabricated on SiGe-on-insulator (SGOI) substrates

IEEE electron device letters, 2001-07, Vol.22 (7), p.321-323

2001

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Comparison of luminescent efficiency of InGaAs quantum well structures grown on Si, GaAs, Ge, and SiGe virtual substrate

Journal of applied physics, 2003-05, Vol.93 (9), p.5095-5102

2003

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Low-temperature GaAs films grown on Ge and Ge/SiGe/Si substrates

Journal of applied physics, 2003-10, Vol.94 (8), p.4980-4985

2003

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Influence of high channel doping on the inversion layer electron mobility in strained silicon n-MOSFETs

IEEE electron device letters, 2003-04, Vol.24 (4), p.248-250

2003

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Strained Si on insulator technology: from materials to devices

Solid-state electronics, 2004-08, Vol.48 (8), p.1357-1367

2004

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Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers

Journal of applied physics, 2003-01, Vol.93 (1), p.362-367

2003

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Dislocations in Relaxed SiGe/Si Heterostructures

Physica status solidi. A, Applied research, 1999-01, Vol.171 (1), p.227-238

1999

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Surface NH3 anneal on strained Si0.5Ge0.5 for metal-oxide-semiconductor applications with HfO2 as gate dielectric

Applied physics letters, 2006-04, Vol.88 (14)

2006

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Relaxed silicon-germanium on insulator substrate by layer transfer

Journal of electronic materials, 2001-12, Vol.30 (12), p.L37-L39

2001

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Carrier mobilities and process stability of strained Si n- and p-MOSFETs on SiGe virtual substrates

Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal–oxide–semiconductor field-effect transistors

Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing

Strained Ge channel p -type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates

Film thickness constraints for manufacturable strained silicon CMOS

Crack formation in GaAs heteroepitaxial films on Si and SiGe virtual substrates

High quality Ge on Si by epitaxial necking

Hole mobility enhancements in strained Si/Si1−yGey p -type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1−xGex (x<y) virtual substrates

Single-junction InGaP/GaAs solar cells grown on Si substrates with SiGe buffer layers

Dislocation glide and blocking kinetics in compositionally graded SiGe/Si

High conductance Ge p-channel heterostructures realized by hybrid epitaxial growth

Optimized measurement of strained Si thickness and SiGe virtual substrate composition by spectroscopic ellipsometry

Comparison of arsenic and phosphorus diffusion behavior in silicon–germanium alloys

Fully depleted n-MOSFETs on supercritical thickness strained SOI

Direct regrowth of thin strained silicon films on planarized relaxed silicon–germanium virtual substrates

Monolithic integration of III-V optical interconnects on Si using SiGe virtual substrates

Electron mobility enhancement in strained-Si n-MOSFETs fabricated on SiGe-on-insulator (SGOI) substrates

Comparison of luminescent efficiency of InGaAs quantum well structures grown on Si, GaAs, Ge, and SiGe virtual substrate

Low-temperature GaAs films grown on Ge and Ge/SiGe/Si substrates

Influence of high channel doping on the inversion layer electron mobility in strained silicon n-MOSFETs

Strained Si on insulator technology: from materials to devices

Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers

Dislocations in Relaxed SiGe/Si Heterostructures

Surface NH3 anneal on strained Si0.5Ge0.5 for metal-oxide-semiconductor applications with HfO2 as gate dielectric

Relaxed silicon-germanium on insulator substrate by layer transfer

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