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CARTILAGE REGENERATION AFTER TREATMENT WITH LNA043, A NOVEL DISEASE-MODIFYING OSTEOARTHRITIS DRUG CANDIDATE: RESULTS FROM AN IMAGING-BASED PROOF-OF-CONCEPT TRIAL IN PATIENTS WITH FOCAL ARTICULAR CARTILAGE LESIONS IN THE KNEE

Osteoarthritis and cartilage, 2022-04, Vol.30, p.S206-S207

2022

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Analysis of GaAs FET's for integrated logic

IEEE transactions on electron devices, 1980-06, Vol.27 (6), p.1074-1091

1980

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Femtojoule high speed planar GaAs E-JFET logic

IEEE transactions on electron devices, 1978-06, Vol.25 (6), p.628-639

1978

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Radiation Effects in Gaas Junction Field-Effect Transistors

IEEE transactions on nuclear science, 1980-01, Vol.27 (5), p.1343-1354

1980

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Superhot electron model for ionizing radiation dose rate response of GaAs junction field-effect transistors

Applied physics letters, 1990-03, Vol.56 (11), p.1052-1054

1990

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Negative resistance of a modified insulated-gate field-effect transistor

Proceedings of the IEEE, 1974-01, Vol.62 (8), p.1163-1165

1974

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Admittance of gallium arsenide p+n diodes with lateral base contact

Solid-state electronics, 1984-01, Vol.27 (8), p.785-795

1984

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Voltage-current characteristics of GaAs J-FET's in the hot electron range

Solid-state electronics, 1970-10, Vol.13 (10), p.1415-1424

1970

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Field distribution in junction field-effect transistors at large drain voltages

IEEE transactions on electron devices, 1975-05, Vol.22 (5), p.273-281

1975

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Neutron Degradation of Ion-Implanted and Uniformly Doped Enhancement Mode GaAs JFET's

IEEE transactions on nuclear science, 1978-01, Vol.25 (6), p.1444-1449

1978

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Temperature dependence of the saturation current of MOST's

IEEE transactions on electron devices, 1968-12, Vol.15 (12), p.987-989

1968

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Radiation Effects in Enhancement Mode GAAS Junction Field Effect Transistors

IEEE transactions on nuclear science, 1977-01, Vol.24 (6), p.2305-2308

1977

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Investigation of the sapphire-silicon interface by transient current analysis

1976 International Electron Devices Meeting, 1976, p.283-286

1976

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Operation and circuit performance of a new negative resistance most

1974 International Electron Devices Meeting (IEDM), 1974, p.149-151

1974

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Evaporation of Impurities from Semiconductors

Journal of applied physics, 1957-04, Vol.28 (4), p.420-423

1957

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Residual charges and photoconductivity in Ta 2 O 5

I.R.E. transactions on electron devices, 1961-09, Vol.8 (5), p.422-422

1961

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Residual charges and photoconductivity in Ta2O5

I.R.E. transactions on electron devices, 1961-09, Vol.8 (5), p.422-422

1961

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Charge Effects in GaAs Semi-Insulating Substrates due to Pulsed Ionizing Radiation

1984 IEEE GaAs IC Symposium Technical Digest, 1984, p.143-146

1984

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Apparatus for Crystal Pulling in Vacuum Using a Graphite Resistance Furnace

Review of scientific instruments, 1953-08, Vol.24 (8), p.652-655

1953

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Transient Response of Epitaxial GaAs JFET Structures to Ionizing Radiation

IEEE transactions on nuclear science, 1973-01, Vol.20 (6), p.171-179

1973

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CARTILAGE REGENERATION AFTER TREATMENT WITH LNA043, A NOVEL DISEASE-MODIFYING OSTEOARTHRITIS DRUG CANDIDATE: RESULTS FROM AN IMAGING-BASED PROOF-OF-CONCEPT TRIAL IN PATIENTS WITH FOCAL ARTICULAR CARTILAGE LESIONS IN THE KNEE

Analysis of GaAs FET's for integrated logic

Femtojoule high speed planar GaAs E-JFET logic

Radiation Effects in Gaas Junction Field-Effect Transistors

Superhot electron model for ionizing radiation dose rate response of GaAs junction field-effect transistors

Negative resistance of a modified insulated-gate field-effect transistor

Admittance of gallium arsenide p+n diodes with lateral base contact

Voltage-current characteristics of GaAs J-FET's in the hot electron range

Field distribution in junction field-effect transistors at large drain voltages

Neutron Degradation of Ion-Implanted and Uniformly Doped Enhancement Mode GaAs JFET's

Temperature dependence of the saturation current of MOST's

Radiation Effects in Enhancement Mode GAAS Junction Field Effect Transistors

Investigation of the sapphire-silicon interface by transient current analysis

Operation and circuit performance of a new negative resistance most

Evaporation of Impurities from Semiconductors

Residual charges and photoconductivity in Ta 2 O 5

Residual charges and photoconductivity in Ta2O5

Charge Effects in GaAs Semi-Insulating Substrates due to Pulsed Ionizing Radiation

Apparatus for Crystal Pulling in Vacuum Using a Graphite Resistance Furnace

Transient Response of Epitaxial GaAs JFET Structures to Ionizing Radiation

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