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High-density MIM capacitors with HfO2 dielectrics

Thin solid films, 2004-12, Vol.469-470 (Complete), p.345-349

2004

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The characteristics of hole trapping in HfO2∕SiO2 gate dielectrics with TiN gate electrode

Applied physics letters, 2004-10, Vol.85 (16), p.3525-3527

2004

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Growth of Dysprosium-, Scandium-, and Hafnium-based Third Generation High-κ Dielectrics by Atomic Vapor Deposition

Chemical vapor deposition, 2007-10, Vol.13 (10), p.567-573

2007

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Improved reliability of HfO2/SiON gate stack by fluorine incorporation

IEEE electron device letters, 2006-04, Vol.27 (4), p.240-242

2006

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(Invited) Innovative Deposition Technology for Advanced Materials

ECS transactions, 2010, Vol.28 (1), p.137-144

2010

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High-performance Pt/SrBi2Ta2O9/HfO2/Si structure for nondestructive readout memory

IEEE electron device letters, 2003-09, Vol.24 (9), p.553

2003

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Effects of Low-temperature NH[sub 3] Treatment on the Characteristics of HfO[sub 2]∕SiO[sub 2] Gate Stack

Journal of the Electrochemical Society, 2005, Vol.152 (11), p.G799

2005

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High-density MIM capacitors with HfO 2 dielectrics

Thin solid films, 2004, Vol.469, p.345-349

2004

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HfO2 MIS capacitor with copper gate electrode

IEEE electron device letters, 2004-12, Vol.25 (12), p.784-786

2004

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AVD and MOCVD TaCN-based Films for Gate Metal Applications on High k Gate Dielectrics

ECS transactions, 2007, Vol.11 (4), p.557-567

2007

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Advanced Metal Gate Electrode Options Compatible with ALD and AVD® HfSiOx-Based Gate Dielectrics

ECS transactions, 2006, Vol.3 (3), p.363-374

2006

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DyScHfOx as High-κ Gate Dielectrics: Structural and Electrical Properties

ECS transactions, 2007-04, Vol.6 (1), p.113-120

2007

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Improvements on Electrical Characteristics of p-Channel Metal–Oxide–Semiconductor Field Effect Transistors with HfO 2 Gate Stacks by Post Deposition N 2 O Plasma Treatment

Japanese Journal of Applied Physics, 2005-11, Vol.44 (11R), p.7869

2005

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MOCVD of SrTa 2 O 6 Thin Films for High-k Applications

MRS proceedings, 2004, Vol.811, Article D9.7

2004

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Alternative Gate Dielectric Materials

ECS transactions, 2006, Vol.3 (3), p.479-497

2006

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Electrical Characteristics of Thin HfO 2 Gate Dielectrics Prepared Using Different Pre-Deposition Surface Treatments

Japanese Journal of Applied Physics, 2005-01, Vol.44 (1R), p.87

2005

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Anomalous positive-bias temperature instability of high-κ/metal gate nMOSFET devices with Dy2O3 capping

2008 IEEE International Reliability Physics Symposium, 2008, p.671-672

2008

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MOCVD of SrTa2O6 Thin Films for High-k Applications

MRS proceedings, 2004, Vol.811

2004

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High-density MIM capacitors with HfO2 dielectrics

Thin solid films, 2004, Vol.469-70, p.345-349

2004

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Atomic Vapor Deposition and Atomic Layer Deposition of High-k and Electrode Materials

Meeting abstracts (Electrochemical Society), 2010-02, Vol.MA2010-01 (17), p.929-929

2010

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AVD and MOCVD TaCNO-based Films for Gate Metal Applications on High k Gate Dielectrics

Meeting abstracts (Electrochemical Society), 2007-09, Vol.MA2007-02 (20), p.1164-1164

2007

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DyScHfOx as High-κ Gate Dielectrics: Structural and Electrical Properties

Meeting abstracts (Electrochemical Society), 2007-03, Vol.MA2007-01 (12), p.565-565

2007

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Improving CMOS Performance by AVD Grown High-k Dielectrics and Advanced Metal Electrodes

Meeting abstracts (Electrochemical Society), 2006-02, Vol.MA2005-01 (14), p.640-640

2006

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Low-Temperature Growth of Polycrystalline Ge Films on SiO2 Substrate by HDPCVD

Electrochemical and solid-state letters, 2005-01, Vol.8 (5), p.C74-C76

2005

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Alternative Gate Dielectric Materials

Meeting abstracts (Electrochemical Society), 2006-06, Vol.MA2006-02 (22), p.1130-1130

2006

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High-density MIM capacitors with HfO2 dielectrics

The characteristics of hole trapping in HfO2∕SiO2 gate dielectrics with TiN gate electrode

Growth of Dysprosium-, Scandium-, and Hafnium-based Third Generation High-κ Dielectrics by Atomic Vapor Deposition

Improved reliability of HfO2/SiON gate stack by fluorine incorporation

(Invited) Innovative Deposition Technology for Advanced Materials

High-performance Pt/SrBi2Ta2O9/HfO2/Si structure for nondestructive readout memory

Effects of Low-temperature NH[sub 3] Treatment on the Characteristics of HfO[sub 2]∕SiO[sub 2] Gate Stack

High-density MIM capacitors with HfO 2 dielectrics

HfO2 MIS capacitor with copper gate electrode

AVD and MOCVD TaCN-based Films for Gate Metal Applications on High k Gate Dielectrics

Advanced Metal Gate Electrode Options Compatible with ALD and AVD® HfSiOx-Based Gate Dielectrics

DyScHfOx as High-κ Gate Dielectrics: Structural and Electrical Properties

Improvements on Electrical Characteristics of p-Channel Metal–Oxide–Semiconductor Field Effect Transistors with HfO 2 Gate Stacks by Post Deposition N 2 O Plasma Treatment

MOCVD of SrTa 2 O 6 Thin Films for High-k Applications

Alternative Gate Dielectric Materials

Electrical Characteristics of Thin HfO 2 Gate Dielectrics Prepared Using Different Pre-Deposition Surface Treatments

Anomalous positive-bias temperature instability of high-κ/metal gate nMOSFET devices with Dy2O3 capping

MOCVD of SrTa2O6 Thin Films for High-k Applications

High-density MIM capacitors with HfO2 dielectrics

Atomic Vapor Deposition and Atomic Layer Deposition of High-k and Electrode Materials

AVD and MOCVD TaCNO-based Films for Gate Metal Applications on High k Gate Dielectrics

DyScHfOx as High-κ Gate Dielectrics: Structural and Electrical Properties

Improving CMOS Performance by AVD Grown High-k Dielectrics and Advanced Metal Electrodes

Low-Temperature Growth of Polycrystalline Ge Films on SiO2 Substrate by HDPCVD

Alternative Gate Dielectric Materials

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