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Flyweight, Superelastic, Electrically Conductive, and Flame‐Retardant 3D Multi‐Nanolayer Graphene/Ceramic Metamaterial

Advanced materials (Weinheim), 2017-07, Vol.29 (28), p.n/a

2017

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Model for thickness dependence of mobility and concentration in highly conductive zinc oxide

Optical engineering, 2013-03, Vol.52 (3), p.33801

2013

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ZnO plasmonics for telecommunications

Applied physics letters, 2013-05, Vol.102 (18)

2013

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Nondestructive quantitative mapping of impurities and point defects in thin films: Ga and VZn in ZnO:Ga

Applied physics letters, 2014-06, Vol.104 (24)

2014

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A statistical method to optimize the chemical etching process of zinc oxide thin films

Royal Society open science, 2022-08, Vol.9 (8), p.211560-211560

2022

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Quantum magnetoconductivity characterization of interface disorder in indium-tin-oxide films on fused silica

Communications materials, 2021-12, Vol.2 (1), p.1-7, Article 33

2021

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Characterization of metal and metal alloy films as contact materials in MEMS switches

Journal of micromechanics and microengineering, 2006-03, Vol.16 (3), p.557-563

2006

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Investigation of plasmon resonance tunneling through subwavelength hole arrays in highly doped conductive ZnO films

Journal of applied physics, 2015-11, Vol.118 (17)

2015

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Mobility analysis of highly conducting thin films: Application to ZnO

Applied physics letters, 2010-02, Vol.96 (6), p.062102-062102-3

2010

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Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition

Applied physics letters, 2017-07, Vol.111 (1)

2017

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Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition

Thin solid films, 2014-07, Vol.562, p.519-524

2014

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Optical and electrical properties of ultra-thin indium tin oxide nanofilms on silicon for infrared photonics

Optical materials express, 2018-05, Vol.8 (5), p.1231

2018

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High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge

Applied physics letters, 2017-04, Vol.110 (14)

2017

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Two-dimensional BN buffer for plasma enhanced atomic layer deposition of Al2O3 gate dielectrics on graphene field effect transistors

Scientific reports, 2020-09, Vol.10 (1), p.14699-14699, Article 14699

2020

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Lateral β-Ga2O3 field effect transistors

Semiconductor science and technology, 2020, Vol.35 (1)

2020

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Classical and quantum conductivity in β-Ga2O3

Scientific reports, 2019-02, Vol.9 (1), p.1290-1290, Article 1290

2019

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Si content variation and influence of deposition atmosphere in homoepitaxial Si-doped β-Ga2O3 films by pulsed laser deposition

APL materials, 2018-10, Vol.6 (10), p.101102-101102-10

2018

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Ultra-Low Power Schottky Barrier TFT-Based Neurotransmitter Detection and Regenerative Studies

IEEE sensors journal, 2022-04, Vol.22 (8), p.7550-7561

2022

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Pulsed Power Performance of β-Ga₂O₃ MOSFETs at L-Band

IEEE electron device letters, 2020-07, Vol.41 (7), p.989-992

2020

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Effects of Ar vs. O2 ambient on pulsed-laser-deposited Ga-doped ZnO

Journal of crystal growth, 2011-06, Vol.324 (1), p.110-114

2011

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Defect Engineering at the Al2O3/(010) β-Ga2O3 Interface via Surface Treatments and Forming Gas Post-Deposition Anneals

IEEE transactions on electron devices, 2022-10, Vol.69 (10), p.5656-5663

2022

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Thin-Film Encapsulated RF MEMS Switches

Journal of microelectromechanical systems, 2007-04, Vol.16 (2), p.304-309

2007

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High conductance in ultrathin films of ZnO

Japanese Journal of Applied Physics, 2014-05, Vol.53 (5S1), p.5-1-05FJ01-3

2014

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Effect of fabrication parameters on the ferroelectricity of hafnium zirconium oxide films: A statistical study

Journal of applied physics, 2024-03, Vol.135 (12)

2024

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Optical and electronic effects of rapid thermal annealing at Ir–Ga2O3 interfaces

Journal of applied physics, 2022-05, Vol.131 (20)

2022

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Flyweight, Superelastic, Electrically Conductive, and Flame‐Retardant 3D Multi‐Nanolayer Graphene/Ceramic Metamaterial

Model for thickness dependence of mobility and concentration in highly conductive zinc oxide

ZnO plasmonics for telecommunications

Nondestructive quantitative mapping of impurities and point defects in thin films: Ga and VZn in ZnO:Ga

A statistical method to optimize the chemical etching process of zinc oxide thin films

Quantum magnetoconductivity characterization of interface disorder in indium-tin-oxide films on fused silica

Characterization of metal and metal alloy films as contact materials in MEMS switches

Investigation of plasmon resonance tunneling through subwavelength hole arrays in highly doped conductive ZnO films

Mobility analysis of highly conducting thin films: Application to ZnO

Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition

Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition

Optical and electrical properties of ultra-thin indium tin oxide nanofilms on silicon for infrared photonics

High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge

Two-dimensional BN buffer for plasma enhanced atomic layer deposition of Al2O3 gate dielectrics on graphene field effect transistors

Lateral β-Ga2O3 field effect transistors

Classical and quantum conductivity in β-Ga2O3

Si content variation and influence of deposition atmosphere in homoepitaxial Si-doped β-Ga2O3 films by pulsed laser deposition

Ultra-Low Power Schottky Barrier TFT-Based Neurotransmitter Detection and Regenerative Studies

Pulsed Power Performance of β-Ga₂O₃ MOSFETs at L-Band

Effects of Ar vs. O2 ambient on pulsed-laser-deposited Ga-doped ZnO

Defect Engineering at the Al2O3/(010) β-Ga2O3 Interface via Surface Treatments and Forming Gas Post-Deposition Anneals

Thin-Film Encapsulated RF MEMS Switches

High conductance in ultrathin films of ZnO

Effect of fabrication parameters on the ferroelectricity of hafnium zirconium oxide films: A statistical study

Optical and electronic effects of rapid thermal annealing at Ir–Ga2O3 interfaces

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