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Al 0.25 Ga 0.75 N/GaN enhancement-mode MOS high-electron-mobility transistors with Al 2 O 3 dielectric obtained by ozone water oxidization method

Japanese Journal of Applied Physics, 2016-04, Vol.55 (4), p.44102

2016

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La_{0.6}Sr_{0.4}Co_{0.2}Fe_{0.8}O_{3-\delta}$ 산소 투과 분리막의 제조 및 특성

Hanʼguk Seramik Hakhoe chi, 2001, Vol.38 (10), p.886-893

2001

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A 0.65V embedded SDRAM with smart boosting and power management in a 45nm CMOS technology

Proceedings of the IEEE 2012 Custom Integrated Circuits Conference, 2012, p.1-4

2012

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03-P080 Reciprocal Fgf signalling interactions modulate differentiation of mouse tongue epithelium

Mechanisms of development, 2009-08, Vol.126, p.S90-S90

2009

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03-P081 Cell fate specification during cranial base development

Mechanisms of development, 2009-08, Vol.126, p.S90-S90

2009

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03-P103 Morphogenesis and cellular mechanisms in mice molar root development

Mechanisms of development, 2009-08, Vol.126, p.S97-S97

2009

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03-P122 Molecular interactions and cellular events involved in palatal rugae development

Mechanisms of development, 2009-08, Vol.126, p.S102-S103

2009

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A 1.05-A/m Minimum Magnetic Field Strength Single-Chip, Fully Integrated Biometric Smart Card SoC Achieving 792.5-ms Transaction Time With Anti-Spoofing Fingerprint Authentication

IEEE journal of solid-state circuits, 2023-01, Vol.58 (1), p.1-12

2023

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1,064-nm and 532-nm picosecond neodymium-doped:yttrium-aluminum-garnet laser treatment for longitudinal melanonychia: a case report

Medical lasers, 2024-03, Vol.13 (1), p.63-65

2024

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1-(2,5-Dimeth-oxy-phen-yl)-3-(2-hy-droxy-eth-yl)urea

Acta crystallographica. Section E, Structure reports online, 2010-08, Vol.66 (Pt 8), p.o2088-o2089

2010

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A 1.2 V 12.8 GB/s 2 Gb Mobile Wide-I/O DRAM With 4 × 128 I/Os Using TSV Based Stacking

IEEE journal of solid-state circuits, 2012, Vol.47 (1), p.107-116

2012

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A 1.2 V 12.8 GB/s 2 Gb Mobile Wide-I/O DRAM With 4 \times 128 I/Os Using TSV Based Stacking

IEEE journal of solid-state circuits, 2012-01, Vol.47 (1), p.107-116

2012

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1.25-Gb/s bidirectional transceiver module using 1.5%25-/spl Delta/ silica directional coupler-type WDM

IEEE photonics technology letters, 2005-11, Vol.17 (11), p.2442-2444

2005

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1.25-Gb/s bidirectional transceiver module using 1.5%-[Delta] silica directional coupler-type WDM

IEEE photonics technology letters, 2005-11, Vol.17 (11), p.2442

2005

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1.25-Gb/s bidirectional transceiver module using 1.5%- Delta silica directional coupler-type WDM

IEEE photonics technology letters, 2005-11, Vol.17 (11)

2005

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1.25-Gb/s bidirectional transceiver module using 1.5%-/spl Delta/ silica directional coupler-type WDM

IEEE photonics technology letters, 2005-11, Vol.17 (11), p.2442-2444

2005

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A 1.29 um/sup 2/ full CMOS ultra-low power SRAM cell with 0.12 um spacer-on-stopper (SOS) CMOS technology

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224), 2001, p.11.5.1-11.5.4

2001

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A 1.2V 12.8GB/s 2Gb mobile Wide-I/O DRAM with 4×128 I/Os using TSV-based stacking

2011 IEEE International Solid-State Circuits Conference, 2011, p.496-498

2011

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A 1.2V 5.2mW 40dB 2.5Gb/s Limiting Amplifier in 0.18μm CMOS Using Negative-Impedance Compensation

2007 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 2007, p.56-57

2007

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1-34 PTH Could Reverse Impaired Bone Mineralization Induced By the Overdose of Bisphosphonate

Endocrinology and Metabolism, 2012, 27(3), , pp.247-250

2012

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1-34 PTH Could Reverse Impaired Bone Mineralization Induced By the Overdose of Bisphosphonate

Endocrinology and metabolism (Seoul), 2012-09, Vol.27 (3), p.247

2012

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1.5 V Sub-mW CMOS Interface Circuit for Capacitive Sensor Applications in Ubiquitous Sensor Networks

ETRI journal, 2008-02, Vol.30 (5), p.644-652

2008

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1.55-μm DFB lasers over a wide temperature range for analog application

Microwave and optical technology letters, 2006-02, Vol.48 (2), p.273-275

2006

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A 1.8 V 2 Gb NAND flash memory for mass storage applications

2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC, 2003, p.290-494 vol.1

2003

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1 Case of Bronchial Leiomyoma with Intralobar Pulmonary Sequestration

Tuberculosis and respiratory diseases, 2006, Vol.60 (6), p.678

2006

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Al 0.25 Ga 0.75 N/GaN enhancement-mode MOS high-electron-mobility transistors with Al 2 O 3 dielectric obtained by ozone water oxidization method

La_{0.6}Sr_{0.4}Co_{0.2}Fe_{0.8}O_{3-\delta}$ 산소 투과 분리막의 제조 및 특성

A 0.65V embedded SDRAM with smart boosting and power management in a 45nm CMOS technology

03-P080 Reciprocal Fgf signalling interactions modulate differentiation of mouse tongue epithelium

03-P081 Cell fate specification during cranial base development

03-P103 Morphogenesis and cellular mechanisms in mice molar root development

03-P122 Molecular interactions and cellular events involved in palatal rugae development

A 1.05-A/m Minimum Magnetic Field Strength Single-Chip, Fully Integrated Biometric Smart Card SoC Achieving 792.5-ms Transaction Time With Anti-Spoofing Fingerprint Authentication

1,064-nm and 532-nm picosecond neodymium-doped:yttrium-aluminum-garnet laser treatment for longitudinal melanonychia: a case report

1-(2,5-Dimeth-oxy-phen-yl)-3-(2-hy-droxy-eth-yl)urea

A 1.2 V 12.8 GB/s 2 Gb Mobile Wide-I/O DRAM With 4 × 128 I/Os Using TSV Based Stacking

A 1.2 V 12.8 GB/s 2 Gb Mobile Wide-I/O DRAM With 4 \times 128 I/Os Using TSV Based Stacking

1.25-Gb/s bidirectional transceiver module using 1.5%25-/spl Delta/ silica directional coupler-type WDM

1.25-Gb/s bidirectional transceiver module using 1.5%-[Delta] silica directional coupler-type WDM

1.25-Gb/s bidirectional transceiver module using 1.5%- Delta silica directional coupler-type WDM

1.25-Gb/s bidirectional transceiver module using 1.5%-/spl Delta/ silica directional coupler-type WDM

A 1.29 um/sup 2/ full CMOS ultra-low power SRAM cell with 0.12 um spacer-on-stopper (SOS) CMOS technology

A 1.2V 12.8GB/s 2Gb mobile Wide-I/O DRAM with 4×128 I/Os using TSV-based stacking

A 1.2V 5.2mW 40dB 2.5Gb/s Limiting Amplifier in 0.18μm CMOS Using Negative-Impedance Compensation

1-34 PTH Could Reverse Impaired Bone Mineralization Induced By the Overdose of Bisphosphonate

1-34 PTH Could Reverse Impaired Bone Mineralization Induced By the Overdose of Bisphosphonate

1.5 V Sub-mW CMOS Interface Circuit for Capacitive Sensor Applications in Ubiquitous Sensor Networks

1.55-μm DFB lasers over a wide temperature range for analog application

A 1.8 V 2 Gb NAND flash memory for mass storage applications

1 Case of Bronchial Leiomyoma with Intralobar Pulmonary Sequestration

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