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Nanofiber Channel Organic Electrochemical Transistors for Low‐Power Neuromorphic Computing and Wide‐Bandwidth Sensing Platforms

Advanced science, 2021-05, Vol.8 (10), p.n/a

2021

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Electromigration Characteristics and Morphological Evolution of Cu Interconnects on CVD Co and Ru Liners for 10-nm Class VLSI Technology

IEEE electron device letters, 2018-07, Vol.39 (7), p.1050-1053

2018

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Fast and Durable Nanofiber Mat Channel Organic Electrochemical Transistors

ACS applied materials & interfaces, 2023-08, Vol.15 (33), p.39614-39624

2023

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A study on the interfacial adhesion energy between capping layer and dielectric for cu interconnects

Microelectronics and reliability, 2021-01, Vol.116, p.114020, Article 114020

2021

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High-Performance Poly-Si Thin-Film Transistor With High- k ZrTiO4 Gate Dielectric

IEEE electron device letters, 2015-09, Vol.36 (9), p.920-922

2015

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Direct/Indirect Junction Between Channel Inversion Layer and Doped Source/Drain Region on Metal-Induced Lateral Crystallization Polycrystalline Silicon Bottom Gate TFTs

IEEE transactions on electron devices, 2017-02, Vol.64 (2), p.432-437

2017

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Advanced Four-Mask Process Bottom-Gate Poly-Si TFT via Self-Aligned NiSi2 Seed-Induced Lateral Crystallization

IEEE electron device letters, 2016-10, Vol.37 (10), p.1292-1294

2016

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A Novel Design of Quasi-Lightly Doped Drain Poly-Si Thin-Film Transistors for Suppression of Kink and Gate-Induced Drain Leakage Current

IEEE electron device letters, 2015-04, Vol.36 (4), p.351-353

2015

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Compressive Stressed P-Channel Polycrystalline-Silicon Thin-Film Transistors for High Field-Effect Mobility

IEEE electron device letters, 2015-08, Vol.36 (8), p.793-795

2015

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Thermal Stress Effects on the Electrical Properties of p-Channel Polycrystalline-Silicon Thin-Film Transistors Fabricated via Metal-Induced Lateral Crystallization

IEEE transactions on semiconductor manufacturing, 2015-02, Vol.28 (1), p.35-40

2015

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Retrograde-Mask Processed Polysilicon TFT for High Performance, Planar Structure, and Stable Operation

IEEE electron device letters, 2015-08, Vol.36 (8), p.790-792

2015

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Successive breakdown mode of time-dependent dielectric breakdown for Cu interconnects and lifetime enhancement under dynamic bias stress

2018 IEEE International Reliability Physics Symposium (IRPS), 2018, p.4A.5-1-4A.5-6

2018

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Edge Cut Process for Reducing Ni Content at Channel Edge Region in Metal Induced Lateral Crystallization Poly-Si TFTs

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2016, 16(2), 68, pp.166-171

2016

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Edge Cut Process for Reducing Ni Content at Channel Edge Region in Metal Induced Lateral Crystallization Poly-Si TFTs

Journal of semiconductor technology and science, 2016, Vol.16 (2), p.166-171

2016

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Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor

Scientific reports, 2016-04, Vol.6 (1), p.24734-24734, Article 24734

2016

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Leakage current suppression with a combination of planarized gate and overlap/off-set structure in metal-induced laterally crystallized polycrystalline-silicon thin-film transistors

Solid-state electronics, 2018-04, Vol.142, p.20-24

2018

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Retraction: “Multibit ferroelectric field-effect transistor with epitaxial-like Pb(Zr,Ti)O3” [J. Appl. Phys. 119, 124108 (2016)]

Journal of applied physics, 2017-11, Vol.122 (17)

2017

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Multibit ferroelectric field-effect transistor with epitaxial-like Pb(Zr,Ti)O3

Journal of applied physics, 2016-03, Vol.119 (12)

2016

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Effect of nickel silicide gettering on metal-induced crystallized polycrystalline-silicon thin-film transistors

Solid-state electronics, 2017-06, Vol.132, p.73-79

2017

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Advanced Four-Mask Process Bottom-Gate Poly-Si TFT via Self-Aligned NiSi 2 Seed-Induced Lateral Crystallization

IEEE electron device letters, 2016-10, Vol.37 (10), p.1292-1294

2016

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Progress of p-channel bottom-gate poly-Si thin-film transistor by nickel silicide seed-induced lateral crystallization

Applied physics. A, Materials science & processing, 2016-06, Vol.122 (6), p.1-6, Article 613

2016

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Novel Fabrication of Lightly Doped-Drain for Suppressing the Leakage Current in Polycrystalline Silicon Thin-Film Transistor

Journal of nanoscience and nanotechnology, 2017-05, Vol.17 (5), p.3465-3468

2017

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Bottom-gate poly-Si thin-film transistors by nickel silicide seed-induced lateral crystallization with self-aligned lightly doped layer

Solid-state electronics, 2017-03, Vol.129, p.6-9

2017

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Integrating Epitaxial-Like Pb(Zr,Ti)O3 Thin-Film into Silicon for Next-Generation Ferroelectric Field-Effect Transistor

Scientific reports, 2016-03, Vol.6 (1), p.23189-23189, Article 23189

2016

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Erratum to: Progress of p-channel bottom-gate poly-Si thin-film transistor by nickel silicide seed-induced lateral crystallization

Applied physics. A, Materials science & processing, 2016-07, Vol.122 (7), Article 657

2016

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Nanofiber Channel Organic Electrochemical Transistors for Low‐Power Neuromorphic Computing and Wide‐Bandwidth Sensing Platforms

Electromigration Characteristics and Morphological Evolution of Cu Interconnects on CVD Co and Ru Liners for 10-nm Class VLSI Technology

Fast and Durable Nanofiber Mat Channel Organic Electrochemical Transistors

A study on the interfacial adhesion energy between capping layer and dielectric for cu interconnects

High-Performance Poly-Si Thin-Film Transistor With High- k ZrTiO4 Gate Dielectric

Direct/Indirect Junction Between Channel Inversion Layer and Doped Source/Drain Region on Metal-Induced Lateral Crystallization Polycrystalline Silicon Bottom Gate TFTs

Advanced Four-Mask Process Bottom-Gate Poly-Si TFT via Self-Aligned NiSi2 Seed-Induced Lateral Crystallization

A Novel Design of Quasi-Lightly Doped Drain Poly-Si Thin-Film Transistors for Suppression of Kink and Gate-Induced Drain Leakage Current

Compressive Stressed P-Channel Polycrystalline-Silicon Thin-Film Transistors for High Field-Effect Mobility

Thermal Stress Effects on the Electrical Properties of p-Channel Polycrystalline-Silicon Thin-Film Transistors Fabricated via Metal-Induced Lateral Crystallization

Retrograde-Mask Processed Polysilicon TFT for High Performance, Planar Structure, and Stable Operation

Successive breakdown mode of time-dependent dielectric breakdown for Cu interconnects and lifetime enhancement under dynamic bias stress

Edge Cut Process for Reducing Ni Content at Channel Edge Region in Metal Induced Lateral Crystallization Poly-Si TFTs

Edge Cut Process for Reducing Ni Content at Channel Edge Region in Metal Induced Lateral Crystallization Poly-Si TFTs

Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor

Leakage current suppression with a combination of planarized gate and overlap/off-set structure in metal-induced laterally crystallized polycrystalline-silicon thin-film transistors

Retraction: “Multibit ferroelectric field-effect transistor with epitaxial-like Pb(Zr,Ti)O3” [J. Appl. Phys. 119, 124108 (2016)]

Multibit ferroelectric field-effect transistor with epitaxial-like Pb(Zr,Ti)O3

Effect of nickel silicide gettering on metal-induced crystallized polycrystalline-silicon thin-film transistors

Advanced Four-Mask Process Bottom-Gate Poly-Si TFT via Self-Aligned NiSi 2 Seed-Induced Lateral Crystallization

Progress of p-channel bottom-gate poly-Si thin-film transistor by nickel silicide seed-induced lateral crystallization

Novel Fabrication of Lightly Doped-Drain for Suppressing the Leakage Current in Polycrystalline Silicon Thin-Film Transistor

Bottom-gate poly-Si thin-film transistors by nickel silicide seed-induced lateral crystallization with self-aligned lightly doped layer

Integrating Epitaxial-Like Pb(Zr,Ti)O3 Thin-Film into Silicon for Next-Generation Ferroelectric Field-Effect Transistor

Erratum to: Progress of p-channel bottom-gate poly-Si thin-film transistor by nickel silicide seed-induced lateral crystallization

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