UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 31

Sortiert nach

Improvement of Light Extraction Efficiency and Reduction of Leakage Current in GaN-Based LED Via V-Pit Formation

IEEE photonics technology letters, 2012-03, Vol.24 (6), p.449-451

2012

Volltextzugriff (PDF)

Local stress distribution in GaN vertical light-emitting diodes fabricated using CLO and LLO methods

Journal of physics. D, Applied physics, 2013-04, Vol.46 (15), p.155104-1-4

2013

Volltextzugriff (PDF)

Leakage current improvement of nitride-based light emitting diodes using CrN buffer layer and its vertical type application by chemical lift-off process

Applied physics letters, 2009-06, Vol.94 (24)

2009

Volltextzugriff (PDF)

Effects of Basal Stacking Faults on Electrical Anisotropy of Nonpolar a-Plane ( 11\bar0 ) GaN Light-Emitting Diodes on Sapphire Substrate

IEEE photonics technology letters, 2010-05, Vol.22 (9), p.595-597

2010

Volltextzugriff (PDF)

Correlation between structural and optical properties of a-plane GaN films grown on r-plane sapphire by metal organic chemical-vapor deposition

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2010-05, Vol.28 (3), p.623-626

2010

Volltextzugriff (PDF)

Device Performance of Nonpolar a-plane (11-20) InGaN/GaN Light-emitting Diodes on r-plane Sapphire Substrates

Journal of the Korean Physical Society, 2010, 56(4), , pp.1140-1143

2010

Volltextzugriff (PDF)

Corrigendum: Local stress distribution in GaN vertical light-emitting diodes fabricated using CLO and LLO methods

Journal of physics. D, Applied physics, 2013-05, Vol.46 (19), p.199501

2013

Volltextzugriff (PDF)

Effect of Refined Nitridation of Sapphire Substrates in Hydride Vapor Phase Epitaxy: Definite Correlation of Structural Characteristics between a Low-Temperature-Grown Buffer Layer and a Subsequent High-Temperature-Grown Layer of GaN

Journal of the Korean Physical Society, 2009, 54(6), , pp.2404-2408

2009

Volltextzugriff (PDF)

Experimental verification of effects of barrier dopings on the internal electric fields and the band structure in InGaN/GaN light emitting diodes

Applied physics letters, 2014-03, Vol.104 (12)

2014

Volltextzugriff (PDF)

Leakage current improvement of nitride-based light emitting diodesusing CrN buffer layer and its vertical type application by chemicallift-off process

Applied physics letters, 2009-06, Vol.94 (24), p.242108-242108-3

2009

Volltextzugriff (PDF)

Structural and stimulated emission characteristics of diameter-controlled ZnO nanowires using buffer structure

Journal of physics. D, Applied physics, 2009-11, Vol.42 (22), p.225403-225403 (6)

2009

Volltextzugriff (PDF)

Free-standing GaN substrates fabricated by a combination of substrate fracturing and chemical lift-off

Physica status solidi. C, 2011-07, Vol.8 (7-8), p.2123-2126

2011

Volltextzugriff (PDF)

Device Performance of Nonpolar a-plane (11-20) InGaN/GaN Light-emitting Diodes on r-plane Sapphire Substrates

Journal of the Korean Physical Society, 2010-04, p.1140-1143

2010

Volltextzugriff (PDF)

Novel buffer layer for the growth of GaN on c-sapphire

Physica status solidi. C, 2006-06, Vol.3 (6), p.1388-1391

2006

Volltextzugriff (PDF)

Effect of Refined Nitridation of Sapphire Substrates in Hydride Vapor Phase Epitaxy: Definite Correlation of Structural Characteristics between a Low-Temperature-Grown Buffer Layer and a Subsequent High-Temperature-Grown Layer of GaN

Journal of the Korean Physical Society, 2009-06, p.2404-2408

2009

Volltextzugriff (PDF)

Device Performance of Nonpolar a-plane (11-20) InGaN/GaN Light Emitting Diode on r-plane Sapphire Substrates

Journal of the Korean Physical Society, 2010-04, Vol.56 (4), p.1140-1143

2010

Volltextzugriff (PDF)

Structural Investigation of GaN Nanograins Nucleated on a Sapphire Substrate

Journal of the Korean Physical Society, 2006, 48(6), , pp.1321-1324

2006

Volltextzugriff (PDF)

Selective growth of vertically-aligned ZnO nano-needles

Journal of nanoscience and nanotechnology, 2006-11, Vol.6 (11), p.3351

2006

Volltextzugriff (PDF)

The surface treatment with NH/sub 3/ for GaN grown by a sublimation technique

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468), 2001, p.216-217

2001

Volltextzugriff (PDF)

Experimental observation of sub-terahertz backward-wave amplification in a multi-level microfabricated slow-wave circuit

Applied physics letters, 2015-11, Vol.107 (19)

2015

Volltextzugriff (PDF)

Orientation-controlled assembly and solvothermal ion-exchange of layered double hydroxide nanocrystals

Chemical communications (Cambridge, England), 2003-11 (21), p.2740-2741

2003

Volltextzugriff (PDF)

Dispersion retrieval from multi-level ultra-deep reactive-ion-etched microstructures for terahertz slow-wave circuits

Applied physics letters, 2014-01, Vol.104 (2)

2014

Volltextzugriff (PDF)

Frequency shifts in two-level ultra-deep reactive ion etched slow-wave structures for 0.1 THz backward-wave oscillations

Applied physics letters, 2012-08, Vol.101 (7), p.73508

2012

Volltextzugriff (PDF)

Sub-terahertz slow-wave circuits for coherent radiation sources

2016 URSI Asia-Pacific Radio Science Conference (URSI AP-RASC), 2016, p.963-966

2016

Volltextzugriff (PDF)

Experimental measurement of W-band backward-wave amplification driven by external pulsed signals

2013 IEEE 14th International Vacuum Electronics Conference (IVEC), 2013, p.1-2

2013

Volltextzugriff (PDF)

1 – 25 von 31

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(19)
Mit Volltextzugriff
(29)

Publikationsform

Artikel
(22)
Tagungsberichte
(9)

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(18)
Physical Sciences
(17)
Physics
(16)
Physics, Applied
(13)
Technology
(8)
Oscillators
(7)
Silicon
(7)
Materials Science
(6)
Engineering
(5)
Engineering, Electrical & Electronic
(5)
Radio Frequency
(5)
Electronic, Optical And Magnetic Materials
(4)
Gallium Nitride
(4)
Gallium Nitrides
(4)
Integrated Circuit Modeling
(4)
Loss Measurement
(4)
Applied Physics
(3)
Electrical And Electronic Engineering
(3)
Exact Sciences And Technology
(3)
Fabrication
(3)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Improvement of Light Extraction Efficiency and Reduction of Leakage Current in GaN-Based LED Via V-Pit Formation

Local stress distribution in GaN vertical light-emitting diodes fabricated using CLO and LLO methods

Leakage current improvement of nitride-based light emitting diodes using CrN buffer layer and its vertical type application by chemical lift-off process

Effects of Basal Stacking Faults on Electrical Anisotropy of Nonpolar a-Plane ( 11\bar0 ) GaN Light-Emitting Diodes on Sapphire Substrate

Correlation between structural and optical properties of a-plane GaN films grown on r-plane sapphire by metal organic chemical-vapor deposition

Device Performance of Nonpolar a-plane (11-20) InGaN/GaN Light-emitting Diodes on r-plane Sapphire Substrates

Corrigendum: Local stress distribution in GaN vertical light-emitting diodes fabricated using CLO and LLO methods

Effect of Refined Nitridation of Sapphire Substrates in Hydride Vapor Phase Epitaxy: Definite Correlation of Structural Characteristics between a Low-Temperature-Grown Buffer Layer and a Subsequent High-Temperature-Grown Layer of GaN

Experimental verification of effects of barrier dopings on the internal electric fields and the band structure in InGaN/GaN light emitting diodes

Leakage current improvement of nitride-based light emitting diodesusing CrN buffer layer and its vertical type application by chemicallift-off process

Structural and stimulated emission characteristics of diameter-controlled ZnO nanowires using buffer structure

Free-standing GaN substrates fabricated by a combination of substrate fracturing and chemical lift-off

Device Performance of Nonpolar a-plane (11-20) InGaN/GaN Light-emitting Diodes on r-plane Sapphire Substrates

Novel buffer layer for the growth of GaN on c-sapphire

Effect of Refined Nitridation of Sapphire Substrates in Hydride Vapor Phase Epitaxy: Definite Correlation of Structural Characteristics between a Low-Temperature-Grown Buffer Layer and a Subsequent High-Temperature-Grown Layer of GaN

Device Performance of Nonpolar a-plane (11-20) InGaN/GaN Light Emitting Diode on r-plane Sapphire Substrates

Structural Investigation of GaN Nanograins Nucleated on a Sapphire Substrate

Selective growth of vertically-aligned ZnO nano-needles

The surface treatment with NH/sub 3/ for GaN grown by a sublimation technique

Experimental observation of sub-terahertz backward-wave amplification in a multi-level microfabricated slow-wave circuit

Orientation-controlled assembly and solvothermal ion-exchange of layered double hydroxide nanocrystals

Dispersion retrieval from multi-level ultra-deep reactive-ion-etched microstructures for terahertz slow-wave circuits

Frequency shifts in two-level ultra-deep reactive ion etched slow-wave structures for 0.1 THz backward-wave oscillations

Sub-terahertz slow-wave circuits for coherent radiation sources

Experimental measurement of W-band backward-wave amplification driven by external pulsed signals

Suchergebnisse filtern