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Threshold Voltage Shift Due to Charge Trapping in Dielectric-Gated AlGaN/GaN High Electron Mobility Transistors Examined in Au-Free Technology

IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3197-3203

2013

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IEEE_Xplore

Very low resistance alloyed Ni-based ohmic contacts to InP-capped and uncapped n+-In0.53 Ga0.47As

Journal of applied physics, 2014-10, Vol.116 (16), p.164506

2014

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Investigation of the thermal stability of Mo-In0.45Ga0.47As for applications as source/drain contacts

Journal of applied physics, 2016-10, Vol.120 (13)

2016

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Heavily tellurium doped n-type InGaAs grown by MOCVD on 300 mm Si wafers

Journal of crystal growth, 2015-09, Vol.426, p.243-247

2015

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Strained n-Channel FinFETs Featuring In Situ Doped Silicon-Carbon (\hbox\hbox) Source and Drain Stressors With High Carbon Content

IEEE transactions on electron devices, 2008-09, Vol.55 (9), p.2475-2483

2008

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IEEE_Xplore

Challenges of contact module integration for GaN-based devices in a Si-CMOS environment

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2014-05, Vol.32 (3)

2014

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Ni-(In,Ga)As Alloy Formation Investigated by Hard-X-Ray Photoelectron Spectroscopy and X-Ray Absorption Spectroscopy

Physical review applied, 2014-12, Vol.2 (6), Article 064010

2014

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Nanosecond Laser Anneal for BEOL Performance Boost in Advanced FinFETs

2018 IEEE Symposium on VLSI Technology, 2018, p.61-62

2018

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IEEE_Xplore

Strained Silicon Nanowire Transistors With Germanium Source and Drain Stressors

IEEE transactions on electron devices, 2008-11, Vol.55 (11), p.3048-3055

2008

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IEEE_Xplore

Nickel-Silicide:Carbon Contact Technology for N-Channel MOSFETs With Silicon-Carbon Source/Drain

IEEE electron device letters, 2008-01, Vol.29 (1), p.89-92

2008

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IEEE_Xplore

N-channel FinFETs With 25-nm Gate Length and Schottky-Barrier Source and Drain Featuring Ytterbium Silicide

IEEE electron device letters, 2007-02, Vol.28 (2), p.164-167

2007

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IEEE_Xplore

Diamond-Like Carbon (DLC) Liner: A New Stressor for P-Channel Multiple-Gate Field-Effect Transistors

IEEE electron device letters, 2008-07, Vol.29 (7), p.750-752

2008

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IEEE_Xplore

Spacer Removal Technique for Boosting Strain in n-Channel FinFETs With Silicon-Carbon Source and Drain Stressors

IEEE electron device letters, 2008-01, Vol.29 (1), p.80-82

2008

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IEEE_Xplore

A High-Stress Liner Comprising Diamond-Like Carbon (DLC) for Strained p-Channel MOSFET

IEEE electron device letters, 2008-02, Vol.29 (2), p.192-194

2008

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IEEE_Xplore

N-Channel (110)-Sidewall Strained FinFETs With Silicon-Carbon Source and Drain Stressors and Tensile Capping Layer

IEEE electron device letters, 2007-11, Vol.28 (11), p.1014-1017

2007

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IEEE_Xplore

Effect of substitutional carbon concentration on Schottky-barrier height of nickel silicide formed on epitaxial silicon-carbon films

Journal of applied physics, 2009-08, Vol.106 (4)

2009

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Strained p-Channel FinFETs With Extended \Pi -Shaped Silicon-Germanium Source and Drain Stressors

IEEE electron device letters, 2007-10, Vol.28 (10), p.905-908

2007

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IEEE_Xplore

Germanium Source and Drain Stressors for Ultrathin-Body and Nanowire Field-Effect Transistors

IEEE electron device letters, 2008-07, Vol.29 (7), p.808-810

2008

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IEEE_Xplore

Pulsed Laser Annealing of Silicon-Carbon Source/Drain in MuGFETs for Enhanced Dopant Activation and High Substitutional Carbon Concentration

IEEE electron device letters, 2008-05, Vol.29 (5), p.464-467

2008

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IEEE_Xplore

Schottky Barrier Height Modulation of Nickel-Dysprosium-Alloy Germanosilicide Contacts for Strained P-FinFETs

IEEE electron device letters, 2009-12, Vol.30 (12), p.1278-1280

2009

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IEEE_Xplore

Sulfur-Induced PtSi:C/Si:C Schottky Barrier Height Lowering for Realizing N-Channel FinFETs With Reduced External Resistance

IEEE electron device letters, 2009-05, Vol.30 (5), p.472-474

2009

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IEEE_Xplore

Performance Benefits of Diamond-like Carbon Liner Stressor in Strained P-Channel Field-Effect Transistors With Silicon-Germanium Source and Drain

IEEE electron device letters, 2009-03, Vol.30 (3), p.250-253

2009

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IEEE_Xplore

Achieving Conduction Band-Edge Schottky Barrier Height for Arsenic-Segregated Nickel Aluminide Disilicide and Implementation in FinFETs With Ultra-Narrow Fin Widths

IEEE electron device letters, 2008-04, Vol.29 (4), p.382-385

2008

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IEEE_Xplore

P-Channel Tri-Gate FinFETs Featuring Ni1-yPtySiGe Source/Drain Contacts for Enhanced Drive Current Performance

IEEE electron device letters, 2008-05, Vol.29 (5), p.438-441

2008

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Yttrium- and terbium-based interlayer on SiO2 and HfO2 gate dielectrics for work function modulation of nickel fully silicided gate in nmosfet

IEEE electron device letters, 2007-06, Vol.28 (6), p.482-485

2007

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Threshold Voltage Shift Due to Charge Trapping in Dielectric-Gated AlGaN/GaN High Electron Mobility Transistors Examined in Au-Free Technology

Very low resistance alloyed Ni-based ohmic contacts to InP-capped and uncapped n+-In0.53 Ga0.47As

Investigation of the thermal stability of Mo-In0.45Ga0.47As for applications as source/drain contacts

Heavily tellurium doped n-type InGaAs grown by MOCVD on 300 mm Si wafers

Strained n-Channel FinFETs Featuring In Situ Doped Silicon-Carbon (\hbox\hbox) Source and Drain Stressors With High Carbon Content

Challenges of contact module integration for GaN-based devices in a Si-CMOS environment

Ni-(In,Ga)As Alloy Formation Investigated by Hard-X-Ray Photoelectron Spectroscopy and X-Ray Absorption Spectroscopy

Nanosecond Laser Anneal for BEOL Performance Boost in Advanced FinFETs

Strained Silicon Nanowire Transistors With Germanium Source and Drain Stressors

Nickel-Silicide:Carbon Contact Technology for N-Channel MOSFETs With Silicon-Carbon Source/Drain

N-channel FinFETs With 25-nm Gate Length and Schottky-Barrier Source and Drain Featuring Ytterbium Silicide

Diamond-Like Carbon (DLC) Liner: A New Stressor for P-Channel Multiple-Gate Field-Effect Transistors

Spacer Removal Technique for Boosting Strain in n-Channel FinFETs With Silicon-Carbon Source and Drain Stressors

A High-Stress Liner Comprising Diamond-Like Carbon (DLC) for Strained p-Channel MOSFET

N-Channel (110)-Sidewall Strained FinFETs With Silicon-Carbon Source and Drain Stressors and Tensile Capping Layer

Effect of substitutional carbon concentration on Schottky-barrier height of nickel silicide formed on epitaxial silicon-carbon films

Strained p-Channel FinFETs With Extended \Pi -Shaped Silicon-Germanium Source and Drain Stressors

Germanium Source and Drain Stressors for Ultrathin-Body and Nanowire Field-Effect Transistors

Pulsed Laser Annealing of Silicon-Carbon Source/Drain in MuGFETs for Enhanced Dopant Activation and High Substitutional Carbon Concentration

Schottky Barrier Height Modulation of Nickel-Dysprosium-Alloy Germanosilicide Contacts for Strained P-FinFETs

Sulfur-Induced PtSi:C/Si:C Schottky Barrier Height Lowering for Realizing N-Channel FinFETs With Reduced External Resistance

Performance Benefits of Diamond-like Carbon Liner Stressor in Strained P-Channel Field-Effect Transistors With Silicon-Germanium Source and Drain

Achieving Conduction Band-Edge Schottky Barrier Height for Arsenic-Segregated Nickel Aluminide Disilicide and Implementation in FinFETs With Ultra-Narrow Fin Widths

P-Channel Tri-Gate FinFETs Featuring Ni1-yPtySiGe Source/Drain Contacts for Enhanced Drive Current Performance

Yttrium- and terbium-based interlayer on SiO2 and HfO2 gate dielectrics for work function modulation of nickel fully silicided gate in nmosfet

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