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Sb-Se-based phase-change memory device with lower power and higher speed operations

IEEE electron device letters, 2006-06, Vol.27 (6), p.445-447

2006

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The effect of antimony-doping on Ge2Sb2Te5, a phase change material

Thin solid films, 2008-10, Vol.516 (23), p.8810-8812

2008

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Polycrystalline silicon-germanium heating layer for phase-change memory applications

Applied physics letters, 2006-07, Vol.89 (5)

2006

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Characterization of silver-saturated Ge–Te chalcogenide thin films for nonvolatile random access memory

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2006-03, Vol.24 (2), p.721-724

2006

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Characterization of in situ diffusion of silver in Ge–Te amorphous films for programmable metallization cell memory applications

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2006-09, Vol.24 (5), p.2312-2316

2006

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Electrical Characterization of Nonvolatile Phase-Change Memory Devices Using Sb-Rich Ge–Sb–Te Alloy Films

Japanese Journal of Applied Physics, 2007-11, Vol.46 (11R), p.7225

2007

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Nanoscale observations of the operational failure for phase-change-type nonvolatile memory devices using Ge2Sb2Te5 chalcogenide thin films

Applied surface science, 2007-10, Vol.254 (1), p.316-320

2007

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Bias polarity and frequency effects of Cu-induced dielectric breakdown in damascene Cu interconnects

Microelectronic engineering, 2012, Vol.89, p.58-61

2012

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The characteristics of Cu-drift induced dielectric breakdown under alternating polarity bias temperature stress

2009 IEEE International Reliability Physics Symposium, 2009, p.825-827

2009

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Nonvolatile Memory-Switching Behaviors of Phase-Change Memory Devices Using Ti–Si–N Heating Layers

Journal of the Electrochemical Society, 2008, Vol.155 (6), p.H421

2008

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Silicon-based thin films as bottom electrodes in chalcogenide nonvolatile memories

Applied surface science, 2007-10, Vol.254 (1), p.312-315

2007

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MATERIAL DESIGN SCHEMES FOR SINGLE-TRANSISTOR-TYPE FERROELECTRIC MEMORY CELLS USING Pt/(Bi,La)4Ti3O12/ONO/Si STRUCTURES

Jpn.J.Appl.Phys ,Part 1. Vol. 42, no. 11, pp. 6955-6959. 2003, 2003, Vol.42 (11), p.6955-6959

2003

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Effect of ferroelectric switching time on fatigue behaviors of (117)- and (00l)-oriented (Bi,La)4Ti3O12 thin films

Thin solid films, 2005-07, Vol.484 (1-2), p.374-378

2005

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Microstructure and Electrical Properties of BLT Films by Chemical Solution Deposition

Integrated ferroelectrics, 2005-01, Vol.70 (1), p.123-130

2005

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TIME DEPENDENT RESISTANCE CHANGE OF AMORPHOUS PHASE IN PHASE-CHANGE NONVOLATILE MEMORIES

Integrated ferroelectrics, 2007-12, Vol.93 (1), p.83-89

2007

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Phase Formations and Electrical Properties of Various (Bi, La)4Ti3O12 Thin Films by Chemical Solution Deposition

Journal of electroceramics, 2004-07, Vol.13 (1-3), p.71-75

2004

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Characteristics of Surface Micromachined Pyroelectric Infrared Ray Focal Plane Array

Journal of semiconductor technology and science, 2005, Vol.5 (1), p.45-51

2005

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Studies on the Switching Characteristics of Sol-Gel Derived Ferroelectric (Bi,La)4Ti3O12 Thin Films on Pt/Ti/SiO2/Si Structures

Journal of the Korean Physical Society, 2003, 43(51), , pp.903-908

2003

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Fabrication of Ferroelectric Gate Memory Device Using BLT/HfO 2 /Si Gate Structure

Integrated ferroelectrics, 2003, Vol.52 (1), p.195-203

2003

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Excess Bismuth-Dependent Characteristics of Chemical Solution Deposited Bi3.15La0.85Ti3O12 Thin Films

Integrated ferroelectrics, 2003-02, Vol.52 (1), p.171-178

2003

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Thermal Treatment of Ag/Ag-Doped (Ge[sub 45]Te[sub 55])[sub 0.7]N[sub 0.3] Electrolyte Films in Switching Characteristics of Programmable Metallization Cell Memory

Journal of the Electrochemical Society, 2007, Vol.154 (10), p.H853

2007

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Etching Mechanism of Ferroelectric Film Etched by Helicon Plasma Method

Integrated ferroelectrics, 2002-01, Vol.48 (1), p.213-220

2002

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The effect of antimony-doping on Ge 2Sb 2Te 5, a phase change material

Thin solid films, 2008, Vol.516 (23), p.8810-8812

2008

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Nanoscale observations of the operational failure for phase-change-type nonvolatile memory devices using Ge 2Sb 2Te 5 chalcogenide thin films

Applied surface science, 2007, Vol.254 (1), p.316-320

2007

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Polycrystalline silicon-germanium heating layer for phase-changememory applications

Applied physics letters, 2006-08, Vol.89 (5), p.053517-053517-3

2006

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Sb-Se-based phase-change memory device with lower power and higher speed operations

The effect of antimony-doping on Ge2Sb2Te5, a phase change material

Polycrystalline silicon-germanium heating layer for phase-change memory applications

Characterization of silver-saturated Ge–Te chalcogenide thin films for nonvolatile random access memory

Characterization of in situ diffusion of silver in Ge–Te amorphous films for programmable metallization cell memory applications

Electrical Characterization of Nonvolatile Phase-Change Memory Devices Using Sb-Rich Ge–Sb–Te Alloy Films

Nanoscale observations of the operational failure for phase-change-type nonvolatile memory devices using Ge2Sb2Te5 chalcogenide thin films

Bias polarity and frequency effects of Cu-induced dielectric breakdown in damascene Cu interconnects

The characteristics of Cu-drift induced dielectric breakdown under alternating polarity bias temperature stress

Nonvolatile Memory-Switching Behaviors of Phase-Change Memory Devices Using Ti–Si–N Heating Layers

Silicon-based thin films as bottom electrodes in chalcogenide nonvolatile memories

MATERIAL DESIGN SCHEMES FOR SINGLE-TRANSISTOR-TYPE FERROELECTRIC MEMORY CELLS USING Pt/(Bi,La)4Ti3O12/ONO/Si STRUCTURES

Effect of ferroelectric switching time on fatigue behaviors of (117)- and (00l)-oriented (Bi,La)4Ti3O12 thin films

Microstructure and Electrical Properties of BLT Films by Chemical Solution Deposition

TIME DEPENDENT RESISTANCE CHANGE OF AMORPHOUS PHASE IN PHASE-CHANGE NONVOLATILE MEMORIES

Phase Formations and Electrical Properties of Various (Bi, La)4Ti3O12 Thin Films by Chemical Solution Deposition

Characteristics of Surface Micromachined Pyroelectric Infrared Ray Focal Plane Array

Studies on the Switching Characteristics of Sol-Gel Derived Ferroelectric (Bi,La)4Ti3O12 Thin Films on Pt/Ti/SiO2/Si Structures

Fabrication of Ferroelectric Gate Memory Device Using BLT/HfO 2 /Si Gate Structure

Excess Bismuth-Dependent Characteristics of Chemical Solution Deposited Bi3.15La0.85Ti3O12 Thin Films

Thermal Treatment of Ag/Ag-Doped (Ge[sub 45]Te[sub 55])[sub 0.7]N[sub 0.3] Electrolyte Films in Switching Characteristics of Programmable Metallization Cell Memory

Etching Mechanism of Ferroelectric Film Etched by Helicon Plasma Method

The effect of antimony-doping on Ge 2Sb 2Te 5, a phase change material

Nanoscale observations of the operational failure for phase-change-type nonvolatile memory devices using Ge 2Sb 2Te 5 chalcogenide thin films

Polycrystalline silicon-germanium heating layer for phase-changememory applications

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