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Impact of thermal oxidation pressure and temperature on deactivation of the interfacial trap states in Al2O3/GaAs MOS capacitor

Physica status solidi. A, Applications and materials science, 2015-09, Vol.212 (9), p.1911-1915

2015

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Technology scaling on High-K & Metal-Gate FinFET BTI reliability

2013 IEEE International Reliability Physics Symposium (IRPS), 2013, p.2D.1.1-2D.1.4

2013

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IEEE_Xplore

Growth and electrical properties of silicon oxide grown by atomic layer deposition using Bis(ethyl-methyl-amino)silane and ozone

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2012-01, Vol.30 (1), p.01A126-01A126-7

2012

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Thickness and Post-annealing Effects of the Sputtered La-Capping Layer Inserted between the TiN Gate and Hf-Based Dielectrics

ACS applied materials & interfaces, 2014-04, Vol.6 (7), p.5199-5205

2014

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Development of thermal neutron SER-resilient high-k/metal gate technology

2014 IEEE International Reliability Physics Symposium, 2014, p.2B.4.1-2B.4.3

2014

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IEEE_Xplore

Impacts of Zr Composition in Hf1-xZrxOy Gate Dielectrics on Their Crystallization Behavior and Bias-Temperature-Instability Characteristics

IEEE transactions on electron devices, 2011-07, Vol.58 (7), p.2094-2103

2011

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Effect of Catalyst Layer Density and Growth Temperature in Rapid Atomic Layer Deposition of Silica Using Tris(tert-pentoxy)silanol

ACS applied materials & interfaces, 2011-05, Vol.3 (5), p.1633-1639

2011

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Comparison of HfO2 films grown by atomic layer deposition using HfCl4 and H2O or O3 as the oxidant

Journal of applied physics, 2003-09, Vol.94 (5), p.3641-3647

2003

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Atomic layer deposition of hafnium silicate films using hafnium tetrachloride and tetra-n-butyl orthosilicate

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2004-07, Vol.22 (4), p.1285-1289

2004

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Atomic layer deposition of zirconium silicate films using zirconium tetrachloride and tetra-n-butyl orthosilicate

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2002-11, Vol.20 (6), p.2096-2100

2002

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Impacts of Zr Composition in \hbox \hbox\hbox Gate Dielectrics on Their Crystallization Behavior and Bias-Temperature-Instability Characteristics

IEEE transactions on electron devices, 2011-07, Vol.58 (7), p.2094-2103

2011

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IEEE_Xplore

Systematic study on bias temperature instability of various high-k gate dielectrics ; HfO2, HfZrxOy and ZrO2

2009 IEEE International Reliability Physics Symposium, 2009, p.971-972

2009

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IEEE_Xplore

Turn-Around Effect of V Shift During the Positive Bias Temperature Instability of the n-Type Transistor With \hbox\hbox Gate Dielectrics

IEEE electron device letters, 2010-12, Vol.31 (12), p.1479-1481

2010

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IEEE_Xplore

Integration Friendly Dual Metal Gate Technology Using Dual Thickness Metal Inserted Poly-Si Stacks (DT-MIPS)

2007 IEEE Symposium on VLSI Technology, 2007, p.196-197

2007

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IEEE_Xplore

A high-endurance low-temperature polysilicon thin-film transistor EEPROM cell

IEEE electron device letters, 2000-06, Vol.21 (6), p.304-306

2000

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IEEE_Xplore

At speed HTOL test for reliability qualification of high speed mobile applications

2013 IEEE International Reliability Physics Symposium (IRPS), 2013, p.3E.2.1-3E.2.4

2013

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IEEE_Xplore

Highly reliable polysilicon oxide grown by electron cyclotron resonance nitrous oxide plasma

IEEE electron device letters, 1997-10, Vol.18 (10), p.486-488

1997

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IEEE_Xplore

Investigation of interface trap states in TiN/Al2O3/p-Si capacitor by deep level transient spectroscopy

Applied physics letters, 2003-02, Vol.82 (7), p.1066-1068

2003

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POST-ANNEALING EFFECTS ON FIXED CHARGE AND SLOW/FAST INTERFACE STATES OF TiN/Al2O3/p-SI METAL-OXIDE-SEMICONDUCTOR CAPACITOR

Japanese Journal of Applied Physics, Part 1, 2003, Vol.42 (3), p.1222-1226

2003

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Characteristics of polysilicon thin-film transistor with thin-gate dielectric grown by electron cyclotron resonance nitrous oxide plasma

IEEE electron device letters, 1997-05, Vol.18 (5), p.172-174

1997

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IEEE_Xplore

A poly-Si thin-film transistor EEPROM cell with a folded floating gate

IEEE transactions on electron devices, 1999-02, Vol.46 (2), p.436-438

1999

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IEEE_Xplore

A highly manufacturable MIPS (metal inserted poly-Si stack) technology with novel threshold voltage control

Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005, 2005, p.232-233

2005

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IEEE_Xplore

Improved stability of short-channel hydrogenated N-channel polycrystalline silicon thin-film transistors with very thin ECR N2O-plasma gate oxide

IEEE electron device letters, 1998-12, Vol.19 (12), p.458-460

1998

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IEEE_Xplore

Triple Versus Dual Antiplatelet Therapy in Patients With Acute ST-Segment Elevation Myocardial Infarction Undergoing Primary Percutaneous Coronary Intervention

Circulation (New York, N.Y.), 2009-06, Vol.119 (25), p.3207-3214

2009

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Effect of the silicidation reaction condition on the gate oxide integrity in Ti-polycide gate

Japanese Journal of Applied Physics, 1994, Vol.33 (1B), p.672-677

1994

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Impact of thermal oxidation pressure and temperature on deactivation of the interfacial trap states in Al2O3/GaAs MOS capacitor

Technology scaling on High-K & Metal-Gate FinFET BTI reliability

Growth and electrical properties of silicon oxide grown by atomic layer deposition using Bis(ethyl-methyl-amino)silane and ozone

Thickness and Post-annealing Effects of the Sputtered La-Capping Layer Inserted between the TiN Gate and Hf-Based Dielectrics

Development of thermal neutron SER-resilient high-k/metal gate technology

Impacts of Zr Composition in Hf1-xZrxOy Gate Dielectrics on Their Crystallization Behavior and Bias-Temperature-Instability Characteristics

Effect of Catalyst Layer Density and Growth Temperature in Rapid Atomic Layer Deposition of Silica Using Tris(tert-pentoxy)silanol

Comparison of HfO2 films grown by atomic layer deposition using HfCl4 and H2O or O3 as the oxidant

Atomic layer deposition of hafnium silicate films using hafnium tetrachloride and tetra-n-butyl orthosilicate

Atomic layer deposition of zirconium silicate films using zirconium tetrachloride and tetra-n-butyl orthosilicate

Impacts of Zr Composition in \hbox \hbox\hbox Gate Dielectrics on Their Crystallization Behavior and Bias-Temperature-Instability Characteristics

Systematic study on bias temperature instability of various high-k gate dielectrics ; HfO2, HfZrxOy and ZrO2

Turn-Around Effect of V Shift During the Positive Bias Temperature Instability of the n-Type Transistor With \hbox\hbox Gate Dielectrics

Integration Friendly Dual Metal Gate Technology Using Dual Thickness Metal Inserted Poly-Si Stacks (DT-MIPS)

A high-endurance low-temperature polysilicon thin-film transistor EEPROM cell

At speed HTOL test for reliability qualification of high speed mobile applications

Highly reliable polysilicon oxide grown by electron cyclotron resonance nitrous oxide plasma

Investigation of interface trap states in TiN/Al2O3/p-Si capacitor by deep level transient spectroscopy

POST-ANNEALING EFFECTS ON FIXED CHARGE AND SLOW/FAST INTERFACE STATES OF TiN/Al2O3/p-SI METAL-OXIDE-SEMICONDUCTOR CAPACITOR

Characteristics of polysilicon thin-film transistor with thin-gate dielectric grown by electron cyclotron resonance nitrous oxide plasma

A poly-Si thin-film transistor EEPROM cell with a folded floating gate

A highly manufacturable MIPS (metal inserted poly-Si stack) technology with novel threshold voltage control

Improved stability of short-channel hydrogenated N-channel polycrystalline silicon thin-film transistors with very thin ECR N2O-plasma gate oxide

Triple Versus Dual Antiplatelet Therapy in Patients With Acute ST-Segment Elevation Myocardial Infarction Undergoing Primary Percutaneous Coronary Intervention

Effect of the silicidation reaction condition on the gate oxide integrity in Ti-polycide gate

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