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Analysis of complex time series using refined composite multiscale entropy

Physics letters. A, 2014-04, Vol.378 (20), p.1369-1374

2014

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Online Failure Prediction of the Electrolytic Capacitor for LC Filter of Switching-Mode Power Converters

IEEE transactions on industrial electronics (1982), 2008-01, Vol.55 (1), p.400-406

2008

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Review of Silicon Carbide Processing for Power MOSFET

Crystals (Basel), 2022-02, Vol.12 (2), p.245

2022

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Time Series Analysis Using Composite Multiscale Entropy

Entropy (Basel, Switzerland), 2013-03, Vol.15 (3), p.1069-1084

2013

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Impact of Post-Deposition Annealing on Electrical Properties of RF-Sputtered Cu2O/4H-SiC and NiO/4H-SiC PiN Diodes

Electronic Materials Letters, 2024, 20(5), , pp.537-547

2024

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Demonstration of CMOS Integration With High-Voltage Double-Implanted MOS in 4H-SiC

IEEE electron device letters, 2021-01, Vol.42 (1), p.78-81

2021

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The performance analysis of the low‐speed direct‐drive generators for harvesting current energy

IET renewable power generation, 2023-02, Vol.17 (2), p.305-316

2023

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An Investigation on Barrier Inhomogeneities of 4H-SiC Schottky Barrier Diodes Induced by Surface Morphology and Traps

IEEE transactions on electron devices, 2012-03, Vol.59 (3), p.694-699

2012

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A novel algorithm for single-axis maximum power generation sun trackers

Energy conversion and management, 2017-10, Vol.149, p.543-552

2017

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Investigation of 3.3 kV 4H-SiC DC-FSJ MOSFET Structures

Micromachines (Basel), 2021-06, Vol.12 (7), p.756

2021

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Influence of the Design of Square p+ Islands on the Characteristics of 4H-SiC JBS

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.1394-1398

2017

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The AC Line Current Regulation Strategy for the Grid-Connected PV System

IEEE transactions on power electronics, 2010-01, Vol.25 (1), p.209-218

2010

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Counter-Doped JTE, an Edge Termination for HV SiC Devices With Increased Tolerance to the Surface Charge

IEEE transactions on electron devices, 2015-02, Vol.62 (2), p.354-358

2015

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Modified multiscale entropy for short-term time series analysis

Physica A, 2013-12, Vol.392 (23), p.5865-5873

2013

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Influence of the vertical wind and wind direction on the power output of a small vertical-axis wind turbine installed on the rooftop of a building

Applied energy, 2018-01, Vol.209, p.383-391

2018

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Low Turn-on voltage dual metal AlGaN/GaN Schottky barrier diode

Solid-state electronics, 2015-03, Vol.105, p.12-15

2015

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The Impact of Solvents on the Performances of Solution‐Processed Indium Gallium Zinc Oxide Thin‐Film Transistors Using Nitrate Ligands

Advanced engineering materials, 2020-02, Vol.22 (2), p.n/a

2020

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Design and Fabrication of 4H-SiC Lateral High-Voltage Devices on a Semi-Insulating Substrate

IEEE transactions on electron devices, 2012-03, Vol.59 (3), p.754-760

2012

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Modulation of Ciss of a 4H-SiC Planar MOSFET With a Shorter Sidewall and a Thicker Gate

IEEE electron device letters, 2023-11, Vol.44 (11), p.1825-1828

2023

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The correlation of the drain-source capacitance variation and the P-pillar structures in a 4H-SiC quasi super junction MOSFET

Materials science in semiconductor processing, 2024-08, Vol.178, p.108413, Article 108413

2024

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1100 V, 22.9 mΩcm2 4H-SiC RESURF Lateral Double-Implanted MOSFET With Trench Isolation

IEEE transactions on electron devices, 2021-10, Vol.68 (10), p.5009-5013

2021

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A Novel Deep Junction Edge Termination for Superjunction MOSFETs

IEEE electron device letters, 2018-04, Vol.39 (4), p.544-547

2018

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The Correlation of Surface Defects and Reverse Breakdown of 4H-SiC Schottky Barrier Diodes

Journal of electronic materials, 2007-04, Vol.36 (4), p.272-276

2007

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Pyramid solar micro-grid

IOP conference series. Earth and environmental science, 2018-03, Vol.136 (1), p.12002

2018

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A balanced pulse-modulated polar transmitter for improved efficiency and stability using power recycling

Microwave and optical technology letters, 2014-06, Vol.56 (6), p.1452-1454

2014

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Analysis of complex time series using refined composite multiscale entropy

Online Failure Prediction of the Electrolytic Capacitor for LC Filter of Switching-Mode Power Converters

Review of Silicon Carbide Processing for Power MOSFET

Time Series Analysis Using Composite Multiscale Entropy

Impact of Post-Deposition Annealing on Electrical Properties of RF-Sputtered Cu2O/4H-SiC and NiO/4H-SiC PiN Diodes

Demonstration of CMOS Integration With High-Voltage Double-Implanted MOS in 4H-SiC

The performance analysis of the low‐speed direct‐drive generators for harvesting current energy

An Investigation on Barrier Inhomogeneities of 4H-SiC Schottky Barrier Diodes Induced by Surface Morphology and Traps

A novel algorithm for single-axis maximum power generation sun trackers

Investigation of 3.3 kV 4H-SiC DC-FSJ MOSFET Structures

Influence of the Design of Square p+ Islands on the Characteristics of 4H-SiC JBS

The AC Line Current Regulation Strategy for the Grid-Connected PV System

Counter-Doped JTE, an Edge Termination for HV SiC Devices With Increased Tolerance to the Surface Charge

Modified multiscale entropy for short-term time series analysis

Influence of the vertical wind and wind direction on the power output of a small vertical-axis wind turbine installed on the rooftop of a building

Low Turn-on voltage dual metal AlGaN/GaN Schottky barrier diode

The Impact of Solvents on the Performances of Solution‐Processed Indium Gallium Zinc Oxide Thin‐Film Transistors Using Nitrate Ligands

Design and Fabrication of 4H-SiC Lateral High-Voltage Devices on a Semi-Insulating Substrate

Modulation of Ciss of a 4H-SiC Planar MOSFET With a Shorter Sidewall and a Thicker Gate

The correlation of the drain-source capacitance variation and the P-pillar structures in a 4H-SiC quasi super junction MOSFET

1100 V, 22.9 mΩcm2 4H-SiC RESURF Lateral Double-Implanted MOSFET With Trench Isolation

A Novel Deep Junction Edge Termination for Superjunction MOSFETs

The Correlation of Surface Defects and Reverse Breakdown of 4H-SiC Schottky Barrier Diodes

Pyramid solar micro-grid

A balanced pulse-modulated polar transmitter for improved efficiency and stability using power recycling

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