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A Hybrid Blind Signal Separation Algorithm: Particle Swarm Optimization on Feed-Forward Neural Network

Lecture notes in computer science, 2006, p.1078-1087

2006

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A Comparison of Behaviors between Hydrogenated/Unhydrogenated Polysilicon Thin Film Transistors under Electric Stress

Japanese Journal of Applied Physics, 2000-07, Vol.39 (7R), p.3896

2000

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The electrostatic charging damage on the characteristics and reliability of polysilicon thin-film transistors during plasma hydrogenation

IEEE electron device letters, 1997-05, Vol.18 (5), p.187-189

1997

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A novel stack structure to improve the degradation of W-polycide gated MOS device with undoped a-Si/heavily-doped poly-Si multilayer

IEEE electron device letters, 1997-05, Vol.18 (5), p.181-183

1997

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Improvement on fluorine effect under high field stress in tungsten-polycide gated metal-oxide-semiconductor field-effect transistor with oxynitride and/or reoxidized-oxynitride gate dielectric

Japanese Journal of Applied Physics, 1996, Vol.35 (5A), p.2590-2594

1996

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Impact of hydrogenating plasma induced oxide charging effects on the characteristics of polysilicon thin film transistors

Japanese Journal of Applied Physics, 1997-03, Vol.36 (3A), p.1025-1029

1997

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The impacts of back-end high temperature thermal treatments on the characteristics and gate oxide reliability of thin film transistor in ultra large scale integrated circuit process

Japanese Journal of Applied Physics, 1997-05, Vol.36 (5A), p.2628-2632

1997

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Cluster-based Adaptive Mutation Mechanism To Improve the Performance of Genetic Algorithm

Sixth International Conference on Intelligent Systems Design and Applications, 2006, Vol.1, p.461-466

2006

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IEEE_Xplore

Rapid thermal annealing on the characteristics of polysilicon thin-film transistors in practical TFT SRAM process

IEEE transactions on electron devices, 1997-09, Vol.44 (9), p.1561-1562

1997

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IEEE_Xplore

High performance polysilicon thin film transistors by H2O plasma hydrogenation

Thin solid films, 1997-08, Vol.305 (1-2), p.327-329

1997

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High performance polysilicon thin film transistors by H 2O plasma hydrogenation

Thin solid films, 1997, Vol.305 (1), p.327-329

1997

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ROR and RYK extracellular region structures suggest that receptor tyrosine kinases have distinct WNT-recognition modes

Cell reports (Cambridge), 2021-10, Vol.37 (3), p.109834-109834, Article 109834

2021

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Effects of substrate and annealing on GaN films grown by plasma-assisted molecular beam epitaxy

Surface & coatings technology, 2017-06, Vol.320, p.548-553

2017

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A Hybrid Blind Signal Separation Algorithm: Particle Swarm Optimization on Feed-Forward Neural Network

A Comparison of Behaviors between Hydrogenated/Unhydrogenated Polysilicon Thin Film Transistors under Electric Stress

The electrostatic charging damage on the characteristics and reliability of polysilicon thin-film transistors during plasma hydrogenation

A novel stack structure to improve the degradation of W-polycide gated MOS device with undoped a-Si/heavily-doped poly-Si multilayer

Improvement on fluorine effect under high field stress in tungsten-polycide gated metal-oxide-semiconductor field-effect transistor with oxynitride and/or reoxidized-oxynitride gate dielectric

Impact of hydrogenating plasma induced oxide charging effects on the characteristics of polysilicon thin film transistors

The impacts of back-end high temperature thermal treatments on the characteristics and gate oxide reliability of thin film transistor in ultra large scale integrated circuit process

Cluster-based Adaptive Mutation Mechanism To Improve the Performance of Genetic Algorithm

Rapid thermal annealing on the characteristics of polysilicon thin-film transistors in practical TFT SRAM process

High performance polysilicon thin film transistors by H2O plasma hydrogenation

High performance polysilicon thin film transistors by H 2O plasma hydrogenation

ROR and RYK extracellular region structures suggest that receptor tyrosine kinases have distinct WNT-recognition modes

Effects of substrate and annealing on GaN films grown by plasma-assisted molecular beam epitaxy

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