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Zinc oxide and indium-gallium-zinc-oxide bi-layer synaptic device with highly linear long-term potentiation and depression characteristics

Scientific reports, 2022-01, Vol.12 (1), p.1259-1259, Article 1259

2022

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Ag incorporation in low-temperature grown Cu(In,Ga)Se2 solar cells using Ag precursor layers

Solar energy materials and solar cells, 2016-03, Vol.146, p.114-120

2016

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Tb/Ni/TiN Stack for Ultralow Contact Resistive Ni‐Tb‐InGaAs Alloy to n‐In0.53Ga0.47As Layer

Physica status solidi. PSS-RRL. Rapid research letters, 2018-07, Vol.12 (7), p.n/a

2018

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Effect of high-pressure D2 and H2 annealing on LFN properties in FD-SOI pTFET

Scientific reports, 2022-11, Vol.12 (1), p.18516-18516, Article 18516

2022

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ZnWO4 nanorod-colloidal SnO2 quantum dots core@shell heterostructures: Efficient solar-light-driven photocatalytic degradation of tetracycline

Environmental research, 2023-07, Vol.228, p.115851-115851, Article 115851

2023

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Improved Sensitivity in Schottky Contacted Two-Dimensional MoS2 Gas Sensor

ACS applied materials & interfaces, 2019-10, Vol.11 (42), p.38902-38909

2019

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Porous materials as effective chemiresistive gas sensors

Chemical Society reviews, 2024-03, Vol.53 (5), p.253-2577

2024

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Investigation of zinc interstitial ions as the origin of anomalous stress-induced hump in amorphous indium gallium zinc oxide thin film transistors

Applied physics letters, 2013-04, Vol.102 (17)

2013

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Physical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash Memory

Micromachines (Basel), 2021-11, Vol.12 (11), p.1401

2021

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Au-free Si MOS compatible Ni/Ge/Al ohmic contacts to n+-InGaAs

Physica status solidi. A, Applications and materials science, 2015-04, Vol.212 (4), p.804-808

2015

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High Pressure Deuterium Passivation of Charge Trapping Layer for Nonvolatile Memory Applications

Micromachines (Basel), 2021-10, Vol.12 (11), p.1316

2021

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Core@shell nanorods for enhancing supercapacitor performance: ZnWO4 nanorods decorated with colloidal SnO2 quantum dots

Materials letters, 2023-07, Vol.343, p.134389, Article 134389

2023

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IGZO-decorated ZnO thin films and their application for gas sensing

Environmental research, 2022-11, Vol.214, p.113796-113796, Article 113796

2022

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Interfacial AlN formation of Si/Ti/Al/Cu Ohmic contact for AlGaN/GaN high-electron-mobility transistors

Microelectronic engineering, 2016-02, Vol.151, p.60-63

2016

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A Study on Dominant Mechanism and Analytical Model of Low-Frequency Noise in FD-SOI pTFET

IEEE journal of the Electron Devices Society, 2022, Vol.10, p.679-686

2022

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Fluorine-implanted indium-gallium-zinc oxide (IGZO) chemiresistor sensor for high-response NO2 detection

Chemosphere (Oxford), 2021-12, Vol.284, p.131287-131287, Article 131287

2021

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A 5.43 nV/√Hz Chopper Operational Amplifier Using Lateral PNP Input Stage with BJT Current Mirror Base Current Cancellation

Applied sciences, 2020-12, Vol.10 (23), p.8376

2020

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Mobility Improvement of Amorphous Indium-gallium-zinc Oxide Thin Film Transistor by Roll-to-roll Compatible Plasma Treatment

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2020, 20(2), 92, pp.163-169

2020

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Charge Migration Analysis of 3D SONOS NAND Flash Memory Using Test Pattern

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2020, 20(2), 92, pp.151-157

2020

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Investigation of Intra-Nitride Charge Migration Suppression in SONOS Flash Memory

Micromachines (Basel), 2019-05, Vol.10 (6), p.356

2019

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Performance enhancement of HfO2-based resistive random-access memory devices using ZnO nanoparticles

Nanotechnology, 2023-09, Vol.34 (39)

2023

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Crystalline beryllium oxide on Si (100) deposited using E-beam evaporator and thermal oxidation

Applied surface science, 2019-06, Vol.479, p.803-809

2019

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Reducing Contact Resistance Between Ni-InGaAs and n-In0.53Ga0.47As using Sn Interlayer in n-In0.53Ga0.47As MOSFETs

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2018, 18(3), 81, pp.301-306

2018

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Effects of thermal annealing on analog resistive switching behavior in bilayer HfO2/ZnO synaptic devices: the role of ZnO grain boundaries

Nanoscale, 2024-02, Vol.16 (9), p.4609-4619

2024

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Crystal Quality Effect on Low-Frequency Noise in ZnO TFTs

IEEE electron device letters, 2011-12, Vol.32 (12), p.1701-1703

2011

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Zinc oxide and indium-gallium-zinc-oxide bi-layer synaptic device with highly linear long-term potentiation and depression characteristics

Ag incorporation in low-temperature grown Cu(In,Ga)Se2 solar cells using Ag precursor layers

Tb/Ni/TiN Stack for Ultralow Contact Resistive Ni‐Tb‐InGaAs Alloy to n‐In0.53Ga0.47As Layer

Effect of high-pressure D2 and H2 annealing on LFN properties in FD-SOI pTFET

ZnWO4 nanorod-colloidal SnO2 quantum dots core@shell heterostructures: Efficient solar-light-driven photocatalytic degradation of tetracycline

Improved Sensitivity in Schottky Contacted Two-Dimensional MoS2 Gas Sensor

Porous materials as effective chemiresistive gas sensors

Investigation of zinc interstitial ions as the origin of anomalous stress-induced hump in amorphous indium gallium zinc oxide thin film transistors

Physical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash Memory

Au-free Si MOS compatible Ni/Ge/Al ohmic contacts to n+-InGaAs

High Pressure Deuterium Passivation of Charge Trapping Layer for Nonvolatile Memory Applications

Core@shell nanorods for enhancing supercapacitor performance: ZnWO4 nanorods decorated with colloidal SnO2 quantum dots

IGZO-decorated ZnO thin films and their application for gas sensing

Interfacial AlN formation of Si/Ti/Al/Cu Ohmic contact for AlGaN/GaN high-electron-mobility transistors

A Study on Dominant Mechanism and Analytical Model of Low-Frequency Noise in FD-SOI pTFET

Fluorine-implanted indium-gallium-zinc oxide (IGZO) chemiresistor sensor for high-response NO2 detection

A 5.43 nV/√Hz Chopper Operational Amplifier Using Lateral PNP Input Stage with BJT Current Mirror Base Current Cancellation

Mobility Improvement of Amorphous Indium-gallium-zinc Oxide Thin Film Transistor by Roll-to-roll Compatible Plasma Treatment

Charge Migration Analysis of 3D SONOS NAND Flash Memory Using Test Pattern

Investigation of Intra-Nitride Charge Migration Suppression in SONOS Flash Memory

Performance enhancement of HfO2-based resistive random-access memory devices using ZnO nanoparticles

Crystalline beryllium oxide on Si (100) deposited using E-beam evaporator and thermal oxidation

Reducing Contact Resistance Between Ni-InGaAs and n-In0.53Ga0.47As using Sn Interlayer in n-In0.53Ga0.47As MOSFETs

Effects of thermal annealing on analog resistive switching behavior in bilayer HfO2/ZnO synaptic devices: the role of ZnO grain boundaries

Crystal Quality Effect on Low-Frequency Noise in ZnO TFTs

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