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Beyond the Debye length in high ionic strength solution: direct protein detection with field-effect transistors (FETs) in human serum

Scientific reports, 2017-07, Vol.7 (1), p.5256-15, Article 5256

2017

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Dynamic monitoring of transmembrane potential changes: a study of ion channels using an electrical double layer-gated FET biosensor

Lab on a chip, 2018-01, Vol.18 (7), p.1047-1056

2018

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High-field modulated ion-selective field-effect-transistor (FET) sensors with sensitivity higher than the ideal Nernst sensitivity

Scientific reports, 2018-05, Vol.8 (1), p.8300-11, Article 8300

2018

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Design and Demonstration of Tunable Amplified Sensitivity of AlGaN/GaN High Electron Mobility Transistor (HEMT)-Based Biosensors in Human Serum

Analytical chemistry (Washington), 2019-05, Vol.91 (9), p.5953-5960

2019

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High-Performance AlGaN/GaN Schottky Diodes With an AlGaN/AlN Buffer Layer

IEEE electron device letters, 2011-11, Vol.32 (11), p.1519-1521

2011

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Direct detection of fibrinogen in human plasma using electric-double-layer gated AlGaN/GaN high electron mobility transistors

Applied physics letters, 2017-08, Vol.111 (8)

2017

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High sensitivity cardiac troponin I detection in physiological environment using AlGaN/GaN High Electron Mobility Transistor (HEMT) Biosensors

Biosensors & bioelectronics, 2018-02, Vol.100, p.282-289

2018

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A Large-Signal SPICE Model for a Dual-Gate GaN RF Switch With OFF-State Harmonic Control

IEEE transactions on electron devices, 2024-01, Vol.71 (1), p.84-90

2024

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Efficiency Enhancement of InGaN LEDs With an n-Type AlGaN/GaN/InGaN Current Spreading Layer

IEEE electron device letters, 2011-10, Vol.32 (10), p.1409-1411

2011

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Enumeration of circulating tumor cells and investigation of cellular responses using aptamer-immobilized AlGaN/GaN high electron mobility transistor sensor array

Sensors and actuators. B, Chemical, 2018-03, Vol.257, p.96-104

2018

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Direct detection of DNA using electrical double layer gated high electron mobility transistor in high ionic strength solution with high sensitivity and specificity

Sensors and actuators. B, Chemical, 2018-10, Vol.271, p.110-117

2018

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Low-resistance smooth-surface Ti/Al/Cr/Mo/Au n-type Ohmic contact to AlGaN/GaN heterostructures

Applied physics letters, 2009-06, Vol.94 (24)

2009

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A 600 V AlGaN/GaN Schottky barrier diode on silicon substrate with fast reverse recovery time

Physica status solidi. C, 2012-03, Vol.9 (3-4), p.949-952

2012

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Detection of Severe Acute Respiratory Syndrome (SARS) Coronavirus Nucleocapsid Protein Using AlGaN/GaN High Electron Mobility Transistors

ECS transactions, 2013-03, Vol.50 (6), p.239-243

2013

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Improving the off-state characteristics and dynamic on-resistance of AlInN/AlN/GaN HEMTs with a GaN cap layer

Applied physics express, 2015-06, Vol.8 (6), p.64102

2015

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A Comprehensive Model for Whole Cell Sensing and Transmembrane Potential Measurement Using FET Biosensors

ECS journal of solid state science and technology, 2018, Vol.7 (7), p.Q3001-Q3008

2018

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AlGaN/GaN high electron mobility transistors for protein–peptide binding affinity study

Biosensors & bioelectronics, 2013-03, Vol.41, p.717-722

2013

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Beyond the Limit of Ideal Nernst Sensitivity: Ultra-High Sensitivity of Heavy Metal Ion Detection with Ion-Selective High Electron Mobility Transistors

ECS journal of solid state science and technology, 2018, Vol.7 (9), p.Q176-Q183

2018

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Human immunodeficiency virus drug development assisted with AlGaN/GaN high electron mobility transistors and binding-site models

Applied physics letters, 2013-04, Vol.102 (17), p.173704

2013

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Effects of Lens Shape on GaN Grown on Microlens Patterned Sapphire Substrates by Metallorganic Chemical Vapor Deposition

Journal of the Electrochemical Society, 2010, Vol.157 (3), p.H304

2010

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Investigation of C-terminal domain of SARS nucleocapsid protein–Duplex DNA interaction using transistors and binding-site models

Sensors and actuators. B, Chemical, 2014-03, Vol.193, p.334-339

2014

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(Invited) Investigations and Improvements of AlInN/GaN HEMTs Grown on Si

ECS transactions, 2015, Vol.66 (1), p.217-222

2015

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(Invited) Growth and Characterization of High Power AlInN/GaN HEMTs

ECS transactions, 2014-03, Vol.61 (4), p.3-8

2014

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A gold-free fully copper metalized AlGaN/GaN power HEMTs on Si substrate

Microelectronics and reliability, 2012-11, Vol.52 (11), p.2556-2560

2012

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A Self-Assembled Double-Island Buffer Structure for Improving GaN-Based Materials Grown on Si Substrates

ECS journal of solid state science and technology, 2014, Vol.3 (12), p.R229-R233

2014

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Beyond the Debye length in high ionic strength solution: direct protein detection with field-effect transistors (FETs) in human serum

Dynamic monitoring of transmembrane potential changes: a study of ion channels using an electrical double layer-gated FET biosensor

High-field modulated ion-selective field-effect-transistor (FET) sensors with sensitivity higher than the ideal Nernst sensitivity

Design and Demonstration of Tunable Amplified Sensitivity of AlGaN/GaN High Electron Mobility Transistor (HEMT)-Based Biosensors in Human Serum

High-Performance AlGaN/GaN Schottky Diodes With an AlGaN/AlN Buffer Layer

Direct detection of fibrinogen in human plasma using electric-double-layer gated AlGaN/GaN high electron mobility transistors

High sensitivity cardiac troponin I detection in physiological environment using AlGaN/GaN High Electron Mobility Transistor (HEMT) Biosensors

A Large-Signal SPICE Model for a Dual-Gate GaN RF Switch With OFF-State Harmonic Control

Efficiency Enhancement of InGaN LEDs With an n-Type AlGaN/GaN/InGaN Current Spreading Layer

Enumeration of circulating tumor cells and investigation of cellular responses using aptamer-immobilized AlGaN/GaN high electron mobility transistor sensor array

Direct detection of DNA using electrical double layer gated high electron mobility transistor in high ionic strength solution with high sensitivity and specificity

Low-resistance smooth-surface Ti/Al/Cr/Mo/Au n-type Ohmic contact to AlGaN/GaN heterostructures

A 600 V AlGaN/GaN Schottky barrier diode on silicon substrate with fast reverse recovery time

Detection of Severe Acute Respiratory Syndrome (SARS) Coronavirus Nucleocapsid Protein Using AlGaN/GaN High Electron Mobility Transistors

Improving the off-state characteristics and dynamic on-resistance of AlInN/AlN/GaN HEMTs with a GaN cap layer

A Comprehensive Model for Whole Cell Sensing and Transmembrane Potential Measurement Using FET Biosensors

AlGaN/GaN high electron mobility transistors for protein–peptide binding affinity study

Beyond the Limit of Ideal Nernst Sensitivity: Ultra-High Sensitivity of Heavy Metal Ion Detection with Ion-Selective High Electron Mobility Transistors

Human immunodeficiency virus drug development assisted with AlGaN/GaN high electron mobility transistors and binding-site models

Effects of Lens Shape on GaN Grown on Microlens Patterned Sapphire Substrates by Metallorganic Chemical Vapor Deposition

Investigation of C-terminal domain of SARS nucleocapsid protein–Duplex DNA interaction using transistors and binding-site models

(Invited) Investigations and Improvements of AlInN/GaN HEMTs Grown on Si

(Invited) Growth and Characterization of High Power AlInN/GaN HEMTs

A gold-free fully copper metalized AlGaN/GaN power HEMTs on Si substrate

A Self-Assembled Double-Island Buffer Structure for Improving GaN-Based Materials Grown on Si Substrates

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